An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.
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1. A method for manufacturing a thin film transistor array panel, comprising: forming a gate line on a substrate;forming a gate insulating layer covering the gate line;forming a semiconductor layer on the gate insulating layer;forming a data line and a drain electrode on the semiconductor layer;form
1. A method for manufacturing a thin film transistor array panel, comprising: forming a gate line on a substrate;forming a gate insulating layer covering the gate line;forming a semiconductor layer on the gate insulating layer;forming a data line and a drain electrode on the semiconductor layer;forming a passivation layer having a contact hole on the data line;forming a first pixel electrode connected to the drain electrode through the contact hole on the passivation layer;removing the first pixel electrode by using an etchant; andforming a second pixel electrode connected to the drain electrode through the contact hole on the passivation layer,wherein the etchant comprises an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and water,wherein the inorganic acid comprises H2SO4 and another inorganic acid, and a concentration of H2SO4 is less than half of a concentration of the another inorganic acid. 2. The method of claim 1, wherein the data line and the drain electrode have a double-layered structure comprising a lower layer and an upper layer, the lower layer is formed of titanium (Ti), and the upper layer is formed of copper (Cu). 3. The method of claim 2, wherein a concentration of the inorganic acid is from 1 to 20 wt % of the entire etchant composition, a concentration of the ammonium containing compound is from 0.1 to 5.0 wt % of the entire etchant composition, and a concentration of the cyclic amine compound is from 0.1 to 5.0 wt % of the entire etchant composition. 4. The method of claim 3, wherein the cyclic amine compound comprises at least one of aminotetrazole, benzotriazole, imidazole, indol, phulin, pyrazolel, pyridine, pyrimidine, pyrrol, pyrrolidine, and pyrroline. 5. The method of claim 4, wherein the inorganic acid comprises at least one of H2SO4, H3PO4, HNO3, HCl, and HClO4. 6. The method of claim 5, wherein the first pixel electrode and the second pixel electrode comprise indium zinc oxide (IZO) or indium tin oxide (ITO). 7. The method of claim 1, wherein the ammonium (NH4+)-containing compound comprises at least one of CH3COONH4, NH4SO3NH2, NH4C6H5O2, NH4COONH4, NH4Cl, NH4H2PO4, NH4OOCH, NH4HCO3, H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4, NH4PF6, HOC(CO2H)(CH2CO2NH4)2, NH4NO3, (NH4)2S2O8, H2NSO3NH4, and (NH4)2SO4. 8. The method of claim 1, wherein a concentration of the inorganic acid is from 7 to 20 wt % of the etchant composition, a concentration of the ammonium containing compound is from 0.1 to 5.0 wt % of the etchant composition, and a concentration of the cyclic amine compound is from 0.1 to 5.0 wt % of the etchant composition.
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이 특허에 인용된 특허 (6)
Mei Sheng Zhou SG; Sangki Hong SG; Simon Chooi SG, Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects.
Park, Hong-Sick; Kim, Young-Jun; Park, Young-Woo; Lee, Wang-Woo; Seo, Won-Guk; Cho, Sam-Young; Han, Seung-Yeon; Kim, Gyu-Po; Shin, Hyun-Cheol; Lee, Ki-Beom, Etchant composition, and method of manufacturing a display substrate using the same.
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