초록 ▼

A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being

A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

대표청구항 ▼

1. A silicon-based infrared photodetector integrated on a silicon-on-insulator (SOI) substrate with an optical waveguide, the SOI substrate including a planar SOT surface layer, the silicon-based infrared photodetector comprising: a metallic strip disposed over a portion of the planar SOI surface la

1. A silicon-based infrared photodetector integrated on a silicon-on-insulator (SOI) substrate with an optical waveguide, the SOI substrate including a planar SOT surface layer, the silicon-based infrared photodetector comprising: a metallic strip disposed over a portion of the planar SOI surface layer along the direction of propagation of an optical signal along the optical waveguide, the metallic strip forming a Schottky barrier with the optical waveguide;a first ohmic contact disposed on the planar SOI surface layer at a first contact area;a second ohmic contact disposed on the metallic strip at a second contact area; anda field plate electrode disposed over and separated from the metallic strip, wherein the application of a voltage to the field plate electrode modifies the electric field along the metallic strip to preferentially direct the momentum of hot carriers, influencing the number of hot conductors that cross over the Schottky barrier, which in turn modifies the photocurrent generated by the silicon-based infrared photodetector. 2. A silicon-based infrared photodetector as defined in claim 1 where the polarity of the voltage applied to the field plate is controlled to preferentially direct the momentum of hot carriers in a direction nearly normal with respect to the interface between planar SOI surface layer and the metallic strip, increasing the number of hot carriers that cross over the Schottky barrier. 3. A silicon-based infrared photodetector as defined in claim 1 wherein the voltage applied to the field plate is tunable to adjust the number of hot conductors that cross over the Schottky barrier and thereby adjust the sensitivity of the photodetector. 4. A silicon-based infrared photodetector as defined in claim 1 wherein the metallic strip comprises a layer of silicide material disposed during conventional CMOS processing. 5. A silicon-based infrared photodetector as defined in claim 4 wherein the layer of silicide material is processed as a single step with a silicide region used as a contact. 6. A silicon-based infrared photodetector as defined in claim 1 wherein the field plate electrode comprises a portion of a first conductor layer disposed during conventional CMOS processing. 7. A silicon-based infrared photodetector as defined in claim 1 wherein the field plate electrode comprises a portion of a second conductor layer disposed during conventional CMOS processing. 8. A silicon-based infrared photodetector as defined in claim 1 wherein the planar SOI layer is n-doped and the “hot” carriers comprise “hot” electrons. 9. A silicon-based infrared photodetector as defined in claim 1 wherein the planar SOI layer is p-doped and the “hot” carriers comprise “hot” holes. 10. A silicon-based infrared photodetector as defined in claim 1 wherein the field plate electrode is separated from the metallic strip by a distance of no greater than 2 μm. 11. A silicon-based infrared photodetector as defined in claim 1 wherein the field plate electrode is separated from the metallic strip by a distance of no less than 0.2 μm. 12. A silicon-based infrared photodetector as defined in claim 1 wherein the field plate electrode is separated from the metallic strip by a distance of approximately 0.4 μm.