Composite semiconductor substrates for thin-film device layer transfer
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/06
H01L-021/30
H01L-021/46
출원번호
US-0061132
(2009-08-27)
등록번호
US-8624357
(2014-01-07)
국제출원번호
PCT/US2009/055146
(2009-08-27)
§371/§102 date
20110601
(20110601)
국제공개번호
WO2010/025218
(2010-03-04)
발명자
/ 주소
Joshi, Monali B.
Goorsky, Mark S.
출원인 / 주소
The Regents of the University of California
대리인 / 주소
Foley & Lardner LLP
인용정보
피인용 횟수 :
2인용 특허 :
8
초록▼
Described herein are composite semiconductor substrates for use in semiconductor device fabrication and related devices and methods. In one embodiment, a composite substrate includes: (1) a bulk silicon layer; (2) a porous silicon layer adjacent to the bulk silicon layer, wherein the porous silicon
Described herein are composite semiconductor substrates for use in semiconductor device fabrication and related devices and methods. In one embodiment, a composite substrate includes: (1) a bulk silicon layer; (2) a porous silicon layer adjacent to the bulk silicon layer, wherein the porous silicon layer has a Young's modulus value that is no greater than 110.5 GPa; (3) an epitaxial template layer, wherein the epitaxial template layer has a root-mean-square surface roughness value in the range of 0.2 nm to 1 nm; and (4) a set of silicon nitride layers disposed between the porous silicon layer and the epitaxial template layer.
대표청구항▼
1. A semiconductor device fabrication method, comprising: providing a first substrate including a first semiconductor material, wherein the first substrate has a first Young's modulus value;forming a porous layer within the first substrate, wherein the porous layer has a second Young's modulus value
1. A semiconductor device fabrication method, comprising: providing a first substrate including a first semiconductor material, wherein the first substrate has a first Young's modulus value;forming a porous layer within the first substrate, wherein the porous layer has a second Young's modulus value in the range of 35 percent to 65 percent of the first Young's modulus value;forming a first bonding layer adjacent to the porous layer of the first substrate;providing a second substrate including a second semiconductor material, wherein the second semiconductor material is different from the first semiconductor material;forming a second bonding layer adjacent to a surface of the second substrate;implanting hydrogen ions in the second substrate;bonding the first bonding layer of the first substrate with the second bonding layer of the second substrate to form a set of bonded substrates; andbased on the implanted hydrogen ions, exfoliating a layer of the second semiconductor material adjacent to the second bonding layer, wherein the exfoliated layer of the second semiconductor material is separated from a remainder of the second substrate so as to form a composite substrate including the exfoliated layer of the second semiconductor material, wherein the set of bonded substrates is a first set of bonded substrates, and further comprising:forming a device layer adjacent to the exfoliated layer of the second semiconductor material;bonding the device layer with a device substrate to form a second set of bonded substrates; andseparating the second set of bonded substrates along an interface within the porous layer to form a semiconductor device, wherein the semiconductor device includes the device substrate and the device layer bonded to the device substrate. 2. The semiconductor device fabrication method of claim 1, wherein the first semiconductor material is a Group IV semiconductor material, and the second semiconductor material is a Group III-V semiconductor material. 3. The semiconductor device fabrication method of claim 2, wherein the first semiconductor material is silicon, the second semiconductor material is indium phosphide, the first bonding layer is a first silicon nitride layer, and the second bonding layer is a second silicon nitride layer. 4. The semiconductor device fabrication method of claim 2, wherein the first substrate is a p+-type silicon substrate. 5. The semiconductor device fabrication method of claim 4, wherein forming the porous layer includes subjecting the p+-type silicon substrate to anodic etching based on a current density in the range of 10 mA/cm2 to 100 mA/cm2, an anodization time interval in the range of 10 seconds to 5 minutes, and an electrolyte including hydrofluoric acid, deionized water, and ethanol. 6. The semiconductor device fabrication method of claim 2, wherein exfoliating the layer of the second semiconductor material includes: annealing the first set of bonded substrates at a first temperature T1 for a first time interval t1; andannealing the first set of bonded substrates at a second temperature T2 for a second time interval t2,wherein T1t2. 7. The semiconductor device fabrication method of claim 6, wherein T1 is in the range of 100° C. to 200° C., t1 is in the range of 1 hr to 10 hr, T2 is in the range of 250° C. to 350° C., and t2 is in the range of 5 sec to 30 min. 8. The semiconductor device fabrication method of claim 5, wherein the hydrofluoric acid, the deionized water, and the ethanol are substantially in a 1:1:2 ratio. 9. The semiconductor device fabrication method of claim 1, wherein the second Young's modulus value is in the range of 45 percent to 55 percent of the first Young's modulus value. 10. The semiconductor device fabrication method of claim 1, further comprising subjecting the exfoliated layer of the second semiconductor material to chemical mechanical polishing to form a substantially planar surface.
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이 특허에 인용된 특허 (8)
Kub, Francis J.; Hobart, Karl D., Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting.
Sullivan Gerard J. (Thousand Oaks CA) Szwed Mary K. (Huntington Beach CA) Chang Mau-Chung F. (Thousand Oaks CA), Method of transferring a thin film to an alternate substrate.
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