Devices formed from a non-polar plane of a crystalline material and method of making the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/16
H01L-031/036
H01L-029/04
출원번호
US-0753049
(2010-04-01)
등록번호
US-8629446
(2014-01-14)
발명자
/ 주소
Lochtefeld, Anthony J.
출원인 / 주소
Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
Slater & Matsil, L.L.P.
인용정보
피인용 횟수 :
2인용 특허 :
257
초록▼
Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V ma
Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V material oriented to a non-polar plane than III-V material oriented to a polar plane. In other embodiments, a bottom region contains more non-polar m-plane or a-plane surface area GaN than polar c-plane surface area GaN facing an active region.
대표청구항▼
1. A method of making a diode comprising: forming a first cladding layer including one or more fins of polar crystalline material, wherein major faces of the one or more fins are non-polar;forming an active region over one or more of said major faces; andforming a second cladding layer adjacent to s
1. A method of making a diode comprising: forming a first cladding layer including one or more fins of polar crystalline material, wherein major faces of the one or more fins are non-polar;forming an active region over one or more of said major faces; andforming a second cladding layer adjacent to said active region. 2. The method of claim 1, wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole. 3. The method of claim 1, wherein the first cladding layer, the active region and the second cladding layer are the same semiconductor crystalline material. 4. The method of claim 1, wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer. 5. The method of claim 1, wherein at least a portion of the active region corresponding to a polar face is removed. 6. The method of claim 1, wherein at least a portion of the first cladding layer or the second cladding layer corresponding to a polar face is removed. 7. A diode comprising: one or more fins of polar crystalline material, wherein major faces of the one or more fins are non-polar, said one or more fins constituting a first cladding layer;an active region formed around said one or more fins; anda second cladding layer formed adjacent to said active region. 8. The diode of claim 7, wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole. 9. The diode of claim 7, wherein the first cladding layer, the active region and the second cladding layer are the same semiconductor crystalline material. 10. The diode of claim 7, wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer. 11. The diode of claim 7, wherein the first cladding layer, the active region and the second cladding layer are repeated. 12. The diode of claim 7, wherein at least a portion of the active region corresponding to a polar face is removed. 13. The diode of claim 7, wherein at least a portion of the first cladding layer or the second cladding layer corresponding to a polar face is removed. 14. A diode comprising: a first cladding layer of a polar crystalline material including a first surface with one or more holes therein, sidewalls of the one or more holes being non-polar faces of the polar crystalline material;a second cladding layer opposite the first surface and extending at least partially into the one or more holes; andan active region interposed between the first and second cladding layers. 15. The diode of claim 14, wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole. 16. The diode of claim 14, wherein the first cladding layer, the active region, and the second cladding layer are the same semiconductor crystalline material. 17. The diode of claim 14, wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer. 18. The diode of claim 14, wherein the first cladding layer, the active region and the second cladding layer are repeated. 19. The diode of claim 14, wherein at least a portion of the active region corresponding to a polar face is removed. 20. The diode of claim 14, wherein at least a portion of first cladding layer or the second cladding layer corresponding to a polar face is removed.
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