IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0024669
(2011-02-10)
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등록번호 |
US-8633723
(2014-01-21)
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우선권정보 |
JP-2010-033330 (2010-02-18) |
발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Rossi, Kimms & McDowell LLP
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인용정보 |
피인용 횟수 :
3 인용 특허 :
1 |
초록
▼
A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the sensing MOSFET's are formed on a semiconductor substrate, and a sensing MOSFET is selected for changing the sensing ratio and further for conf
A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the sensing MOSFET's are formed on a semiconductor substrate, and a sensing MOSFET is selected for changing the sensing ratio and further for confining the sensing ratio variations within a certain narrow range stably from a low main current range to a high main current range. A semiconductor apparatus according to aspects of the invention facilitates reducing the manufacturing costs thereof, obviating the cumbersomeness caused in the use thereof, and confining the sensing ratio variations within a certain narrow range stably.
대표청구항
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1. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor
1. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET;at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT; anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;a gate electrode pad common to the main and sensing MOS transistors;a drain electrode or a collector electrode common to the main and sensing MOS transistor;a source electrode or an emitter electrode of the main MOS transistor;source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; andfive terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad. 2. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET;at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;a gate electrode pad of the main MOS transistor;gate electrode pads of the two pieces of the sensing MOS transistor;a drain electrode or a collector electrode common to the main and sensing MOS transistors;a source electrode or an emitter electrode of the main MOS transistor;a source electrode or an emitter electrode common to the two pieces of the sensing MOS transistor; andsix terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads. 3. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the main MOS transistor, the current capacities thereof being different from each other;a gate electrode pad common to the main and sensing MOS transistors;a drain electrode or a collector electrode common to the main and sensing MOS transistors;source electrodes or emitter electrodes of the two pieces of the main MOS transistor;a source electrode or an emitter electrode of the sensing MOS transistor; andfive terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad. 4. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the main MOS transistor, the current capacities thereof being different from each other;gate electrode pads of the two pieces of the main MOS transistor;a gate electrode pad of the sensing MOS transistor;a drain electrode or a collector electrode common to the main and sensing MOS transistors;a source electrode or an emitter electrode common to the two pieces of the main MOS transistor;a source electrode or an emitter electrode of the sensing MOS transistor; andsix terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads. 5. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the main MOS transistor, the current capacities thereof being different from each other;two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;a gate electrode pad common to the main and sensing MOS transistors;a drain electrode or a collector electrode common to the main and sensing MOS transistors;source electrodes or emitter electrodes of the two pieces of the main MOS transistor;source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; andsix terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad. 6. A semiconductor apparatus comprising: a semiconductor substrate;one or more main semiconductor devices on the semiconductor substrate, the main semiconductor devices making a main current flow;one or more main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the main semiconductor devices exhibiting different current capacities or a plurality of the sensing semiconductor devices exhibiting different current capacities;wherein,a combination of a plurality of the main semiconductor devices and a sensing semiconductor device, a combination of a main semiconductor device and a plurality of the sensing semiconductor devices, or a combination of a plurality of the main semiconductor devices and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used,wherein,at least one of the main semiconductor devices comprises a main MOS transistor comprising a main MOSFET,at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the main MOS transistor, the current capacities thereof being different from each other;two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;gate electrode pads of the two pieces of the main MOS transistor;gate electrode pads of the two pieces of the sensing MOS transistor;a drain electrode or a collector electrode common to the main and sensing MOS transistor;a source electrode or an emitter electrode common to the two pieces of the main MOS transistor;a source electrode or an emitter electrode common to the two pieces of the sensing MOS transistor; andseven terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pads. 7. A semiconductor apparatus comprising: a semiconductor substrate;a main semiconductor device on the semiconductor substrate, the main semiconductor device making a main current flow;a plurality of main sensing semiconductor devices on the semiconductor substrate, the sensing semiconductor devices making a sensing current flow for measuring the main current; anda plurality of the sensing semiconductor devices exhibiting different current capacities;whereina combination of a main semiconductor device and a plurality of the sensing semiconductor devices is selected for setting a sensing ratio that is a ratio between the main current and the sensing current to be constant in a main current range used;wherein,the main semiconductor device comprises a main MOS transistor comprising a main MOSFET,at least one of the sensing semiconductor devices comprises a sensing MOS transistor comprising a sensing MOSFET or a sensing IGBT, anda design value of the sensing ratio is determined by a ratio between a total area of a source layer or an emitter layer in the main MOS transistor and a total area of a source layer or an emitter layer in the sensing MOS transistor;the semiconductor apparatus further comprising:two pieces of the sensing MOS transistor, the current capacities thereof being different from each other;a gate electrode pad common to the main and sensing MOS transistors;a drain electrode or a collector electrode common to the main and sensing MOS transistor;a source electrode or an emitter electrode of the main MOS transistor;source electrodes or emitter electrodes of the two pieces of the sensing MOS transistor; andfive terminals connected to the drain electrode or the collector electrode, the source electrodes or the emitter electrodes, and the gate electrode pad.
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