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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0297057 (2005-12-07) |
등록번호 | US-8636876 (2014-01-28) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 2 인용 특허 : 605 |
In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired 101 or 003 orientation. Some embodimen
In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired 101 or 003 orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.
1. A method of depositing a LiCoO2 layer, comprising: placing a substrate in a reactor;flowing a gaseous mixture including argon and oxygen through the reactor;applying pulsed DC power to a densified conductive ceramic LiCoO2 sputter target having a resistivity of about 3 kΩ-10 kΩ, the densified con
1. A method of depositing a LiCoO2 layer, comprising: placing a substrate in a reactor;flowing a gaseous mixture including argon and oxygen through the reactor;applying pulsed DC power to a densified conductive ceramic LiCoO2 sputter target having a resistivity of about 3 kΩ-10 kΩ, the densified conductive ceramic LiCoO2 sputter target being positioned opposite the substrate, wherein the conductive ceramic LiCoO2 sputter target comprises Li and Co oxides, Li and Co metallic additions, and at least one dopant of Ni, Si, or Nb;applying an RF bias power to the substrate; andfiltering the RF bias power with a narrow-band rejection filter from coupling into the pulsed DC power,wherein a crystalline layer of LiCoO2 having a columnar structure is deposited over the substrate. 2. The method of claim 1, wherein the crystalline layer is oriented. 3. The method of claim 1, wherein the crystalline layer is oriented. 4. The method of claim 1, wherein a grain size of the crystalline layer is between about 750 Å and about 1700 Å. 5. The method of claim 1 wherein the substrate is a material chosen from a set comprised of silicon, polymers, glasses, ceramics, and metals. 6. The method of claim 1, further including preheating the substrate to a temperature of about 200° C. 7. The method of claim 1, wherein the substrate is a low temperature substrate. 8. The method of claim 7, wherein the low temperature substrate is one of a set of substrates including glass, plastic, and metal foil. 9. The method of claim 1, further including forming an oxide layer on the substrate. 10. The method of claim 9, wherein the oxide layer is a silicon dioxide layer. 11. The method of claim 2, wherein the crystalline layer is deposited at a rate of greater than about 1 μm per hour. 12. The method of claim 1, further including depositing a metal layer on the substrate. 13. The method of claim 12, wherein the metal layer is iridium. 14. The method of claim 1, further including annealing the crystalline layer with a low thermal budget. 15. The method of claim 12, further including annealing the LiCoO2 layer at a temperature of less than or equal to about 500° C. 16. The method of claim 12, further including annealing the LiCoO2 layer at a temperature of less than or equal to about 400° C. 17. The method of claim 1, wherein the thickness uniformity of the crystalline layer of LiCoO2 has a standard deviation of 3% one-sigma.
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