IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0617126
(2009-11-12)
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| 등록번호 |
US-8637332
(2014-01-28)
|
|
발명자
/ 주소 |
- Owen, Mark D.
- Anderson, Duayne R.
- McNeill, Thomas R.
- Schreiner, Alexander F.
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| 출원인 / 주소 |
|
| 대리인 / 주소 |
Alleman Hall McCoy Russell & Tuttle LLP
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| 인용정보 |
피인용 횟수 :
0 인용 특허 :
108 |
초록
▼
The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such
The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device.
대표청구항
▼
1. A method for an optical array module, comprising: providing a substrate,forming a plurality of openings in the substrate,providing a 1-10 micron layer of conductive, reflective material in each opening, andmounting a semiconductor device that emits highly divergent light in a hemispherical radiat
1. A method for an optical array module, comprising: providing a substrate,forming a plurality of openings in the substrate,providing a 1-10 micron layer of conductive, reflective material in each opening, andmounting a semiconductor device that emits highly divergent light in a hemispherical radiation pattern within each opening wherein the layer of conductive, reflective material in each opening reflects light from its associated semiconductor device, and wherein the conductive, reflective material electrically connects the semiconductor device to a power source. 2. The method of claim 1, wherein the openings in the substrate are formed by an anisotropic crystallographic etching process. 3. The method of claim 2, wherein the anisotropic crystallographic etching process is performed along a 1-0-0 crystalline silicon axis. 4. The method of claim 2, wherein each micro-reflector is formed in a truncated pyramidal shape. 5. The method of claim 1, wherein the openings in the substrate are formed by a machining process. 6. The method of claim 5, wherein the openings have a parabolic shape. 7. The method of claim 1, wherein the openings are formed in an array having a center-to-center spacing of about 800 microns (0.032 in.). 8. The method of claim 1, wherein the substrate is formed from one of silicon, SiC, diamond, AlN, Al203, or BeO. 9. The method of claim 1, wherein each semiconductor device has a height and each opening has a depth, the height of each semiconductor device being substantially equal to the depth of each opening. 10. The method of claim 1, further comprising depositing a dielectric layer and a titanium metal adhesion layer in that order on the substrate prior to depositing the conductive, reflective layer. 11. The method of claim 1, further comprising depositing a nickel metal barrier layer on the substrate prior to depositing the conductive, reflective layer. 12. The method of claim 1, wherein mounting the semiconductor device comprises eutectic bonding the semiconductor device. 13. A method for an LED micro-reflector array, comprising: forming a plurality of recesses in a substrate;providing a dielectric layer, a metal adhesion layer, and a barrier metal layer, in that order, on the substrate;providing an electrically conductive and optically reflective layer on the barrier metal layer; andmounting a semiconductor device that emits highly divergent light in a hemispherical radiation pattern within each recess wherein the electrically conductive and optically reflective layer in each recess reflects light from the corresponding semiconductor device, and wherein the electrically conductive and optically reflective layer electrically connects the semiconductor device to a power source. 14. The method of claim 13, wherein a thickness of the electrically conductive and optically reflective layer is 1 micron or more and 10 microns or less.
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