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Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an

Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

대표청구항 ▼

1. An apparatus for substrate processing, comprising: a process chamber having a chamber body defining an inner volume; anda single coating comprising silicon and oxygen disposed on an interior surface of the chamber body, wherein the coating has an inner surface proximate the interior surface and a

1. An apparatus for substrate processing, comprising: a process chamber having a chamber body defining an inner volume; anda single coating comprising silicon and oxygen disposed on an interior surface of the chamber body, wherein the coating has an inner surface proximate the interior surface and an outer surface that is at least 35 percent silicon (Si) by atom, and wherein the oxygen concentration decreases from the inner surface to the outer surface. 2. The apparatus of claim 1, wherein the apparatus is configured for processing with a plasma within the inner volume. 3. The apparatus of claim 2, wherein the plasma flows along a toroidal path, and wherein the inner volume forms a portion of the toroidal path. 4. The apparatus of claim 1, wherein the coating substantially covers surfaces of the chamber body that define the inner volume. 5. The apparatus of claim 1, wherein the outer surface of the coating is at least 95 percent silicon by atom. 6. The apparatus of claim 1, wherein the outer surface of the coating is substantially completely silicon by atom. 7. The apparatus of claim 1, wherein the concentration of oxygen proximate the outer surface is substantially zero. 8. The apparatus of claim 1, wherein the coating further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous. 9. A method for forming a coating in a process chamber, comprising: providing a first process gas comprising a silicon containing gas and an oxygen containing gas to an inner volume of the process chamber; andforming a single coating comprising silicon and oxygen disposed on an interior surface of the process chamber at least partially from the first process gas, wherein the coating has an inner surface proximate the interior surface and an outer surface that is at least 35 percent silicon (Si) by atom, and wherein the oxygen concentration decreases from the inner surface to the outer surface. 10. The method of claim 9, wherein the first process gas comprises silane (SiH4). 11. The method of claim 9, wherein the first process gas further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous. 12. The method of claim 9, wherein the outer surface of the coating is at least 95 percent silicon by atom. 13. The method of claim 9, wherein the oxygen containing gas is oxygen. 14. The method of claim 9, wherein the outer surface of the coating is substantially completely silicon by atom. 15. The method of claim 9, wherein the concentration of oxygen at the outer surface of the second layer is substantially zero. 16. The method of claim 9, further comprising: placing a substrate in the process chamber;providing a fluorine containing gas plasma precursor to the process chamber;forming a plasma in the process chamber from the fluorine containing gas; andprocessing the substrate with the plasma. 17. The method of claim 16, wherein the fluorine containing gas further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous.