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A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the

A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

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1. A method of recycling a microelectronic device wafer, said method comprising contacting a microelectronic device structure comprising the wafer and material selected from the group consisting of low-k dielectric material, etch stop material, metal stack material, and combinations thereof with a r

1. A method of recycling a microelectronic device wafer, said method comprising contacting a microelectronic device structure comprising the wafer and material selected from the group consisting of low-k dielectric material, etch stop material, metal stack material, and combinations thereof with a removal composition for sufficient time to remove said material from the microelectronic device structure to produce a recycled wafer, wherein the removal composition comprises hydrofluoric acid, at least one organic solvent, and water, wherein the at least one organic solvent comprises a species selected from the group consisting of diethylene glycol butyl ether, tetramethylene sulfone, and combinations thereof. 2. The method of claim 1, wherein at least 90% of said material is removed. 3. The method of claim 1, wherein at least 95% of said material is removed. 4. The method of claim 1, wherein at least 99% of said material is removed. 5. The method of claim 1, wherein said contacting is carried out for a time of from 30 seconds to 60 minutes at temperature in a range of from 20° C. to 90° C. 6. The method of claim 1, wherein the removal composition further comprises at least one additional species selected from the group consisting of at least one organic acid, at least one chelating agent, and combinations thereof. 7. The method of claim 1, wherein the removal composition further comprises material dissolved therein, wherein said material is selected from the group consisting of low-k dielectric material, metal stack material, and combinations thereof. 8. The method of claim 1, wherein the low-k dielectric material comprises dielectric material selected from the group consisting of silicon-containing organic polymers, silicon-containing hybrid organic materials, silicon-containing hybrid inorganic materials, organosilicate glass, TEOS, fluorinated silicate glass, silicon nitride, and carbon-doped oxide glass. 9. The method of claim 1, wherein the etch stop material comprise a material selected from the group consisting of silicon carbon nitride, silicon carbon oxide, silicon oxynitride, silicon germanium, SiGeB, SiGeC, AlAs, InGaP, InP, InGaAs, and combinations thereof. 10. The method of claim 1, wherein the metal stack material comprises a material selected from the group consisting of tantalum, tantalum nitride, titanium nitride, titanium, nickel, cobalt, tungsten, and silicides thereof; aluminum; alloys of Al; hafnium oxides; hafnium oxysilicates; zirconium oxides; lanthanide oxides; titanates; and combinations thereof. 11. The method of claim 1, wherein the removal composition comprises HF, water, tetramethylene sulfone, and diethylene glycol butyl ether. 12. The method of claim 6, comprising chelating agent, wherein said chelating agent comprises a species selected from the group consisting of acac, hfac, tfac, formate, acetate, bis(trimethylsilylamide) tetramer, amines, glycine, alanine, citric acid, acetic acid, maleic acid, oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid, iminodiacetic acid, etidronic acid, ethylenediamine, EDTA, CDTA, monoethanolamine, and combinations thereof. 13. The method of claim 6, comprising chelating agent, wherein said chelating agent comprises CDTA. 14. The method of claim 1, further comprising using the recycled wafer, subsequent to the removal of said material therefrom, in a microelectronic device manufacturing process. 15. The method of claim 1, further comprising incorporating the recycled wafer into a microelectronic device. 16. The method of claim 1, wherein the recycled wafer includes a parameter selected from the group consisting of: less than about 3% total thickness variation; less than about 1×1010 metal atoms cm−2; less than 50 particles at 0.12 μm; less than 5% front-side pitting; less than 5% backside pitting; and combinations thereof.