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A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical t

A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed.

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1. A method for making a thin-film element comprising the steps of: epitaxially growing a first crystalline layer consisting essentially of germanium on a support, the support comprising a surface layer consisting essentially of silicon crystalline material, the first crystalline layer having a thic

1. A method for making a thin-film element comprising the steps of: epitaxially growing a first crystalline layer consisting essentially of germanium on a support, the support comprising a surface layer consisting essentially of silicon crystalline material, the first crystalline layer having a thickness of less than 3 nanometers, which comprises a critical thickness above which dislocation defects will appear in the first crystalline layer;forming a dielectric layer overlying the first crystalline layer to form a donor structure;assembling the donor structure with a receiver wafer; andeliminating the support. 2. The method according to claim 1, further comprising, prior to forming the dielectric layer, a step of epitaxially growing a second layer on the first crystalline layer, the second layer comprising silicon, such that a lattice parameter of the second layer is determined by a lattice parameter of the surface layer. 3. The method according to claim 2, wherein the step of forming the dielectric layer comprises a step of at least partially oxidizing the second layer to form the dielectric layer. 4. The method according to claim 1, wherein the step of forming the dielectric layer comprises depositing the dielectric layer. 5. The method according to claim 1, wherein forming a dielectric layer comprises forming an oxide layer. 6. The method according to claim 1, wherein the support comprises a plate of the silicon crystalline material. 7. The method according to claim 1, wherein the support further comprises an insulator underlying the surface layer. 8. The method according to claim 1, wherein the surface layer comprises relaxed silicon. 9. The method according to claim 1, wherein the surface layer comprises strained silicon. 10. The method according to claim 1, wherein a face of the first crystalline layer is exposed upon eliminating the support. 11. The method according to claim 1, wherein eliminating the support comprises applying mechanical forces or chemical processing to remove the support from the donor structure. 12. A method for making a thin-film element comprising: providing a support having a strained surface layer characterized by a lattice parameter;forming a germanium crystalline layer on the support, the germanium crystalline layer having a thickness of less than 3 nanometers, such that a lattice parameter of the germanium crystalline layer is substantially the same as the lattice parameter of the support, and such that the germanium crystalline layer is substantially free of dislocation defects;forming a thin silicon layer on the germanium crystalline layer, the thin silicon layer having an elemental composition different from the germanium crystalline layer,wherein the thin silicon layer has a lattice parameter substantially the same as the lattice parameter of the germanium crystalline layer;forming a dielectric layer on the thin silicon layer;bonding a receiver wafer to the dielectric layer; andremoving the support. 13. The method according to claim 12, wherein the strained surface layer of the support comprises silicon or silicon-germanium. 14. The method according to claim 12, wherein the thin silicon layer comprises epitaxially-deposited silicon having a thickness of less than about 1 nm. 15. The method according to claim 14, wherein providing a support comprises providing a silicon substrate having a buried insulator layer, and wherein removing the support comprises mechanical action to remove the silicon and a selective chemical process to remove the buried insulator layer. 16. A method for making a thin-film element comprising the steps of: epitaxially growing a first crystalline layer on a second crystalline layer overlying a support, the second crystalline layer comprising a material having a different elemental composition from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness;epitaxially growing a third layer on said first crystalline layer, the third layer comprising a material and thickness selected such that a lattice parameter of the third layer is determined by a lattice parameter of the second crystalline layer;forming a dielectric layer on a side of the first crystalline layer opposite the support to form a donor structure;assembling the donor structure with a receiver wafer;eliminating the support; andfurther comprising the following steps after eliminating the support:locally etching of the first crystalline layer as far as the third layer; andepitaxially regrowing the first crystalline layer on the regions of the third material layer exposed by the etching.