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Semiconductor device and manufacturing method thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
  • H01L-029/786
출원번호 US-0555468 (2012-07-23)
등록번호 US-8664660 (2014-03-04)
우선권정보 JP-11-191097 (1999-07-06)
발명자 / 주소
  • Yamazaki, Shunpei
  • Arai, Yasuyuki
  • Koyama, Jun
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Husch Blackwell LLP
인용정보 피인용 횟수 : 2  인용 특허 : 55

초록

A p channel IFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film

대표청구항

1. A liquid crystal display device comprising; a first pixel over a first substrate, and comprising: a first TFT comprising: a first portion of a first semiconductor layer;a first gate insulating film over the first portion of the firsts semiconductor layer; anda first gate electrode over the first

이 특허에 인용된 특허 (55)

  1. Suzawa, Hideomi, Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor.
  2. Koyama, Jun; Ohtani, Hisashi; Ogata, Yasushi; Yamazaki, Shunpei, Active matrix display device having wiring layers which are connected over multiple contact parts.
  3. Ichikawa Takeshi,JPX ; Miyawaki Mamoru,JPX ; Kurematsu Katsumi,JPX ; Koyama Osamu,JPX, Active matrix display in which adjacent transistors share a common source region.
  4. Matsumoto Hiroshi (Hachioji JPX), Active matrix liquid crystal display having a peripheral driving circuit element.
  5. Yudasaka Ichio (Suwa JPX) Matsuo Minoru (Suwa JPX) Takenaka Satoshi (Suwa JPX), Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels.
  6. Kobayashi Kazuhiro,JPX ; Masutani Yuichi,JPX ; Murai Hiroyuki,JPX, Active-matrix liquid crystal display and fabrication method thereof.
  7. Zhang Hongyong,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Apparatus for laser ion doping.
  8. Yamamoto Kayo,JPX ; Hanazawa Yasuyuki,JPX, Auxiliary capacitor for a liquid crystal display device.
  9. Kurauchi Shoichi,JPX ; Miyazaki Daisuke,JPX ; Hatoh Hitoshi,JPX ; Midorikawa Teruyuki,JPX, Color filter substrate and liquid crystal display device.
  10. Yamazaki Shunpei,JPX, Display device.
  11. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Electro-optical device having silicon nitride interlayer insulating film.
  12. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  13. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  14. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  15. Yabu Shigeki (Machida JPX) Takabayashi Hiroshi (Kawasaki JPX), External-circuit connecting and packaging structure.
  16. Adan Alberto Oscar,JPX ; Kaneko Seiji,JPX, Field effect transistor and CMOS element having dopant exponentially graded in channel.
  17. Yaniv Zvi (Southfield MI) Cannella Vincent D. (Birmingham MI) Hansell Gregory L. (Ann Arbor MI) Johnson Robert R. (Franklin MI), High yield liquid crystal display and method of making same.
  18. Kume Yasuhiro,JPX ; Hamada Kenji,JPX ; Kondo Masahiko,JPX ; Kurihara Takashi,JPX ; Imai Masato,JPX ; Endo Kazuyuki,JPX, LCD having an LC layer with spacers arranged so that LC molecules are in axial symmetry upon application of voltage.
  19. Takasu Hiroaki,JPX ; Kojima Yoshikazu,JPX ; Takahashi Kunihiro,JPX, Light valve having a semiconductor film and a fabrication process thereof.
  20. Koyama Jun,JPX ; Ohtani Hisashi,JPX ; Ogata Yasushi,JPX ; Yamazaki Shunpei,JPX, Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance.
  21. Kawachi Genshiro,JPX ; Mikami Yoshiro,JPX, Liquid crystal display having a transistor with doped region in an active semiconductor layer.
  22. Masahiro Yasukawa JP, Liquid crystal panel substrate liquid crystal panel and electronic device and projection display device using the same.
  23. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, MIS semiconductor device and method for fabricating the same.
  24. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for fabricating thin film transistor using anodic oxidation.
  25. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
  26. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Method for manufacturing a semiconductor device.
  27. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of fabricating thin film semiconductor integrated circuit.
  28. Kashiwazaki Akio,JPX ; Shirota Katsuhiro,JPX ; Nakazawa Koichiro,JPX ; Hirose Masashi,JPX, Method of manufacturing a color filter.
  29. Minoru Miyazaki JP; Akane Murakami JP; Baochun Cui JP; Mutsuo Yamamoto JP, Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor.
  30. Zhang Hongyong (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Process for laser processing and apparatus for use in the same.
  31. Koyama,Jun; Ohtani,Hisashi; Ogata,Yasushi; Yamazaki,Shunpei, Semiconductor device.
  32. Yoo Ji-Hyoung,KRX, Semiconductor device and a method of fabricating the same.
  33. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  34. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  35. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.
  36. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
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  38. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Semiconductor device and method for forming the same.
  39. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for forming the same.
  40. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  41. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device having a gate wiring comprising laminated wirings.
  42. Miyazaki Minoru (Kanagawa JPX) Murakami Akane (Kanagawa JPX) Cui Baochun (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX), Semiconductor device having a lead including aluminum.
  43. Yamazaki, Shunpei; Tanaka, Yukio; Koyama, Jun; Osame, Mitsuaki; Murakami, Satoshi; Ohnuma, Hideto; Fujimoto, Etsuko; Kitakado, Hidehito, Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate.
  44. Hideomi Suzawa JP, Semiconductor device including active matrix circuit.
  45. Suzawa Hideomi,JPX, Semiconductor device including active matrix circuit.
  46. Suzawa Hideomi,JPX, Semiconductor device including active matrix circuit.
  47. Suzawa Hideomi,JPX, Semiconductor device including active matrix circuit.
  48. Suzawa Hideomi,JPX, Semiconductor device including active matrix circuit.
  49. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor display device and method of manufacturing therefor.
  50. Byun Young Hee ; Lu Yiwei, Solid state imager including TFTs with variably doped contact layer system for reducing TFT leakage current and increasing mobility.
  51. Katayama Shigenori,JPX ; Yasukawa Masahiro,JPX, Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device.
  52. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Thin film semiconductor integrated circuit and method of fabricating the same.
  53. Furuta Mamoru,JPX, Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same.
  54. Kawasaki Ritsuko,JPX ; Kitakado Hidehito,JPX ; Kasahara Kenji,JPX ; Yamazaki Shunpei,JPX, Thin film transistors having ldd regions.
  55. Stein Michael ; Kaufman Toby Ray ; Richarz Yves Alexander ; Tarlow Kenneth Allen ; Nesbitt Bryce Craig, User interface for home automation system.

이 특허를 인용한 특허 (2)

  1. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  2. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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