Multiple fixed-fluidized beds for contaminant removal
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-053/02
출원번호
US-0958815
(2013-08-05)
등록번호
US-8685151
(2014-04-01)
발명자
/ 주소
Brown, Ronald E.
Fernald, Daniel T.
출원인 / 주소
Lummus Technology Inc.
대리인 / 주소
Osha • Liang LLP
인용정보
피인용 횟수 :
0인용 특허 :
26
초록▼
The present disclosure relates generally to contaminant removal from gas streams. In certain embodiments, the present disclosure relates to a process for removing one or more contaminants from a gas stream via contact with a regenerable sorbent at high temperature and pressure, utilizing a unique ar
The present disclosure relates generally to contaminant removal from gas streams. In certain embodiments, the present disclosure relates to a process for removing one or more contaminants from a gas stream via contact with a regenerable sorbent at high temperature and pressure, utilizing a unique arrangement of reactors operating in parallel.
대표청구항▼
1. A system for contaminant removal from a gas, comprising: (a) at least two reactors capable of operating in parallel to remove contaminants from a gas, wherein each reactor comprises a self-contained, fluidized sorbent bed capable of removing contaminants, and wherein each reactor is capable of re
1. A system for contaminant removal from a gas, comprising: (a) at least two reactors capable of operating in parallel to remove contaminants from a gas, wherein each reactor comprises a self-contained, fluidized sorbent bed capable of removing contaminants, and wherein each reactor is capable of regenerating said fluidized sorbent bed to produce an off-gas and a regenerated sorbent;(b) at least two in-line sensors capable of measuring the levels of specific gaseous compounds entering or leaving said reactors;(c) an electronic control system that controls the cycling of said reactors between adsorption and regeneration mode, said control system comprising: 1) a computer processor that processes data acquired from said in-line sensors according to defined parameters, wherein said parameters are programmed into a machine language that is stored on a computer-readable storage medium, and wherein said machine language provides an instruction set to said processor that allows it to propagate a signal;2) at least two valves that receive the signals from said processor to control the flow of the various process gases into the reactors while minimizing changes in temperature and pressure and moderating the rate of said changes to decrease the attrition rate of the sorbent; wherein the control system is configured to maintain each reactor at a temperature above about 100° C. and a pressure above about 20 psig. 2. The system of claim 1, wherein the valves are electrically-actuated double block solenoid valves. 3. The system of claim 1, wherein the control system, for controlling the cycling of said reactors between adsorption and regeneration mode, is configured to: (A) contact a contaminant-laden input gas stream with the initial sorbent in at least one of said reactors, thereby producing a contaminant-depleted product gas stream and a contaminant-laden sorbent;(B) discontinue the flow of said input gas stream into at least one of the reactors, then contact at least a portion of the contaminant-laden sorbent with an inert purge gas, thereby removing at least a portion of the moisture from the sorbent and produce a dried contaminant-laden sorbent; and(C) contact at least a portion of the contaminant-laden sorbent with a regeneration gas stream, thereby producing a regenerated sorbent and an off-gas stream. 4. The system of claim 3, wherein the control system is configured to control a simultaneous opening and closing of the valves, controlling the flow of the input gas stream, the inert purge gas, and the regeneration gas stream to and from the at least two reactors, to moderate the rate of change in temperature and pressure within the reactors. 5. The system of claim 3, wherein the control system is configured, during (A), to maintain the temperature within the reactor at a temperature in the range from about 285° C. to about 455° C. and a pressure in the range from about 300 psig to about 800 psig. 6. The system of claim 3, wherein the control system is configured, during (C), to maintain the temperature within the reactor at a temperature in the range from about 400° C. to about 565° C. and a pressure in the range from about 20 psig to about 300 psig. 7. The system of claim 3, wherein the control system is configured, during (B), to maintain the temperature within the reactor at a temperature in the range from about 285° C. to about 455° C. and a pressure in the range from about 300 psig to about 800 psig. 8. The system of claim 3, wherein, following (C), the control system is configured to cyclically repeat steps (A) through (C).
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