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A unit pixel included in a photo-detection device, the unit pixel including a floating diffusion region in a semiconductor substrate, a ring-shaped collection gate over the semiconductor substrate, a ring-shaped drain gate over the semiconductor substrate, and a drain region in the semiconductor sub

A unit pixel included in a photo-detection device, the unit pixel including a floating diffusion region in a semiconductor substrate, a ring-shaped collection gate over the semiconductor substrate, a ring-shaped drain gate over the semiconductor substrate, and a drain region in the semiconductor substrate, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region.

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1. A unit pixel included in a photo-detection device, the unit pixel comprising: a floating diffusion region in a semiconductor substrate;a ring-shaped collection gate over the semiconductor substrate;a ring-shaped drain gate over the semiconductor substrate;a drain region in the semiconductor subst

1. A unit pixel included in a photo-detection device, the unit pixel comprising: a floating diffusion region in a semiconductor substrate;a ring-shaped collection gate over the semiconductor substrate;a ring-shaped drain gate over the semiconductor substrate;a drain region in the semiconductor substrate; anda ring-shaped photo-charge storing region in the semiconductor substrate between the floating diffusion region and the drain region, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region. 2. The unit pixel as claimed in claim 1, wherein the collection gate surrounds the floating diffusion region, the drain gate surrounds the collection gate, and the drain region surrounds the drain gate. 3. The unit pixel as claimed in claim 1, wherein the floating diffusion region is located at a center, and in comparison to the collection gate and the drain gate, the drain region is outermost relative to the floating diffusion region. 4. The unit pixel as claimed in claim 1, wherein the collection gate and the drain gate have circular or polygonal ring shapes. 5. The unit pixel as claimed in claim 1, wherein a collection gate signal and a drain gate signal are applied to the collection gate and the drain gate, respectively, wherein photo-charges generated in the semiconductor substrate are collected in the floating diffusion region while the collection gate signal is activated, andwherein the photo-charges generated in the semiconductor substrate are drained into the drain region while the drain gate signal is activated. 6. The unit pixel as claimed in claim 1, wherein the photo-charge storing region is doped with impurities of an opposite conductivity type to that of the semiconductor substrate. 7. The unit pixel as claimed in claim 6, wherein the collection gate at least partially overlaps an inner portion of the photo-charge storing region, and wherein the drain gate at least partially overlaps an outer portion of the photo-charge storing region. 8. The unit pixel as claimed in claim 6, wherein the collection gate is between the photo-charge storing region and the floating diffusion region, and wherein the drain gate is between the photo-charge storing region and the drain region. 9. The unit pixel as claimed in claim 8, further comprising: a ring-shaped pinning layer in the semiconductor substrate to cover the photo-charge storing region, the pinning layer being doped with impurities of an opposite conductivity type to that of the photo-charge storing region. 10. The unit pixel as claimed in claim 8, further comprising: a ring-shaped photo gate over the semiconductor substrate between the collection gate and the drain gate to cover the photo-charge storing region. 11. The unit pixel as claimed in claim 1, wherein the semiconductor substrate includes a plurality of photo-charge generating regions doped with impurities of a same conductivity type and different concentrations. 12. A photo-detection device, comprising: a sensing unit configured to convert received light to an electrical signal, the sensing unit including at least one unit pixel; anda control unit configured to control the sensing unit,wherein the unit pixel includes: a floating diffusion region in a semiconductor substrate,a ring-shaped collection gate over the semiconductor substrate,a ring-shaped drain gate over the semiconductor substrate,a drain region in the semiconductor substrate, anda ring-shaped photo-charge storing region in the semiconductor substrate between the floating diffusion region and the drain region, the collection gate and the drain gate respectively arranged between the floating diffusion region and the drain region. 13. The photo-detection device as claimed in claim 12, wherein the sensing unit includes a pixel array in which a plurality of unit pixels are arranged in a rectangular or triangular grid. 14. The photo-detection device as claimed in claim 13, wherein drain regions of the plurality of unit pixels are integrally formed and are spatially coupled to each other in the semiconductor substrate. 15. The photo-detection device as claimed in claim 13, wherein floating diffusion regions of at least two of the plurality of unit pixels are electrically coupled to each other and correspond to a pixel group. 16. The photo-detection device as claimed in claim 13, wherein the plurality of unit pixels are regularly omitted at least at one grid point of the grid, and wherein the sensing unit further includes a readout circuit at the grid point where the unit pixel is omitted to provide outputs of the plurality of unit pixels. 17. The photo-detection device as claimed in claim 13, wherein the plurality of unit pixels include color pixels and depth pixels, and wherein the photo-detection device is a three-dimensional image sensor. 18. A method of measuring a distance, the method comprising: emitting light to an object;converting received light corresponding to the emitted light into an electrical signal using a plurality of bin signals having numbers of cycles that increase according to phase differences with respect to the emitted light; andcalculating a distance to the object based on the electrical signal, wherein the received light is converted into the electrical signal using a unit pixel, the unit pixel including:a floating diffusion region in a semiconductor substrate;a ring-shaped collection gate over the semiconductor substrate;a ring-shaped drain gate over the semiconductor substrate; anda drain region in the semiconductor substrate, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region, wherein duty ratios of the plurality of bin signals increase according to the phase differences with respect to the emitted light. 19. The method as claimed in claim 18, wherein converting the received light into the electrical signal comprises: collecting photo-charges generated by the received light in a floating diffusion region while the plurality of bin signals are activated; anddraining the photo-charges generated by the received light into a drain region while the plurality of bin signals are deactivated. 20. The method as claimed in claim 18, further comprising: adjusting phases and duty ratios of the plurality of bin signals to be concentrated on a phase corresponding to the calculated distance; andcorrecting the distance to the object using the plurality of bin signals having the adjusted phases and duty ratios. 21. A method of measuring a distance, the method comprising: emitting light to an object;converting received light corresponding to the emitted light into an electrical signal using a plurality of bin signals having numbers of cycles that increase according to phase differences with respect to the emitted light; andcalculating a distance to the object based on the electrical signal, wherein the received light is converted into the electrical signal using a single-tap pixel having a ring-shaped structure where a floating diffusion region of the pixel is located at a center of the ring-shaped structure and a drain region of the pixel is arranged an outer portion of the ring-shaped structure,, wherein duty ratios of the plurality of bin signals increase according to the phase differences with respect to the emitted light.