IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0251271
(2011-10-02)
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등록번호 |
US-8687399
(2014-04-01)
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발명자
/ 주소 |
- Sekar, Deepak C
- Or-Bach, Zvi
- Lim, Paul
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출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
321 |
초록
▼
An Integrated device comprising a first monocrystalline layer comprising logic circuit regions and a second monocrystalline layer comprising memory regions constructed above first monocrystalline layer, wherein the memory regions comprise second transistors, wherein said second transistors comprise
An Integrated device comprising a first monocrystalline layer comprising logic circuit regions and a second monocrystalline layer comprising memory regions constructed above first monocrystalline layer, wherein the memory regions comprise second transistors, wherein said second transistors comprise drain and source that are horizontally oriented with respect to the second monocrystalline layer, and a multiplicity of vias through the second monocrystalline layer providing connections between the memory regions and the logic circuit regions, wherein at least one of the multiplicity of vias have a radius of less than 100 nm.
대표청구항
▼
1. An Integrated device, comprising; a first monocrystalline layer comprising memories; wherein said memories comprise an interconnection layer comprising copper or aluminum, anda second layer comprising second transistors overlaying said interconnection layer, wherein said second transistors are ho
1. An Integrated device, comprising; a first monocrystalline layer comprising memories; wherein said memories comprise an interconnection layer comprising copper or aluminum, anda second layer comprising second transistors overlaying said interconnection layer, wherein said second transistors are horizontally oriented monocrystalline transistors, andwherein a plurality of vias through said second layer provide connections between said memories and said second transistors, andwherein at least one of said plurality of vias has a radius of less than 100 nm. 2. A system comprising an Integrated device according to claim 1. 3. The Integrated device according to claim 1, wherein said memories are controlled by decoder logic, said decoder logic comprises said second transistors. 4. The Integrated device according to claim 1, wherein said memories comprise DRAM cells. 5. The Integrated device according to claim 1, further comprising: memory management circuits, wherein said memory management circuits extend the useable endurance of said memories. 6. The Integrated device according to claim 1, wherein said memories are volatile memories, andwherein said second layer comprises non-volatile memories. 7. The Integrated device according to claim 1, wherein said device comprises a first integrated device and a second integrated device, and wherein said first and second integrated devices are substantially different, andwherein a majority of said first and second integrated device layers are substantially the same. 8. The Integrated device according to claim 1, further comprising: refresh circuits for said memories, wherein said refresh circuits allow a refresh to be done while avoiding interference with operation of said memories. 9. The Integrated device according to claim 1, wherein said memories are non-volatile memories, andwherein said second layer comprises volatile memories. 10. An Integrated device, comprising; a first monocrystalline layer comprising memories; wherein said memories comprise an interconnection layer comprising copper or aluminum, anda second layer comprising second transistors overlaying said interconnection layer; wherein said second transistors are horizontally oriented monocrystalline transistors, andrefresh circuits for said memories, wherein said refresh circuits allow a refresh to be done while avoiding interference with operation of said memories. 11. A system comprising an Integrated device according to claim 10. 12. The Integrated device according to claim 10, wherein said memories are controlled by decoder logic, said decoder logic comprises said second transistors. 13. The Integrated device according to claim 10, wherein said memories comprise DRAM cells. 14. The Integrated device according to claim 10, further comprising: memory management circuits, wherein said memory management circuits extend the useable endurance of said memories. 15. The Integrated device according to claim 10, wherein said memories are volatile memories, andwherein said second layer comprises non-volatile memories. 16. The Integrated device according to claim 10, wherein said device comprises a first integrated device and a second integrated device, and wherein said first and second integrated devices are substantially different, andwherein a majority of said first and second integrated device layers are substantially the same. 17. The Integrated device according to claim 10, further comprising: a plurality of vias through said second layer providing connections between said memories and said second transistors, wherein at least one of said plurality of vias has a radius of less than 100 nm. 18. The Integrated device according to claim 10, wherein said memories are non-volatile memories, andwherein said second layer comprises volatile memories. 19. The Integrated device according to claim 10, wherein at least one of said memories comprises two ports, and comprises refresh logic to refresh at least one cell of said memory using one of said ports. 20. An Integrated device, comprising; a first monocrystalline layer comprising first transistors;an interconnection layer comprising copper or aluminum overlaying said first transistors, anda second layer comprising second transistors overlaying said interconnection layer, wherein said second transistors are horizontally oriented monocrystalline transistors, andwherein a plurality of said second transistors form memories, and a plurality of vias through said second layer providing connections between said memories and said first transistors,wherein at least one of said plurality of vias has a radius of less than 100 nm. 21. A system comprising an Integrated device according to claim 20. 22. The Integrated device according to claim 20, wherein said memories are controlled by decoder logic, said decoder logic comprises said second transistors. 23. The Integrated device according to claim 20, wherein said memories comprise DRAM cells. 24. The Integrated device according to claim 20, further comprising: memory management circuits, wherein said memory management circuits extend the useable endurance of said memories. 25. The Integrated device according to claim 20, wherein said memories are volatile memories, andwherein said first layer comprises non-volatile memories. 26. The Integrated device according to claim 20, wherein said device comprises a first integrated device and a second integrated device, and wherein said first and second integrated devices are substantially different, andwherein a majority of said first and second integrated device layers are substantially the same. 27. The Integrated device according to claim 20, further comprising: refresh circuits for said memories, wherein said refresh circuits allow the refresh to be done while avoiding interference with operation of said memories. 28. The Integrated device according to claim 20, wherein said memories are non-volatile memories, andwherein said first layer comprises volatile memories. 29. The Integrated device according to claim 20, wherein at least one of said memories comprises two ports, and comprises refresh logic to refresh at least one cell of said memories using one of said ports. 30. The Integrated device according to claim 20 wherein at least one of said second transistors is one of: (i) a replacement gate transistor;(ii) a recessed channel transistor (RCAT);(iii) a side-gated transistor;(iv) a junction-less transistor; or(v) a dopant-segregated Schottky Source Drain Transistor.
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