The invention provides a glass member provided with a sealing material layer, which suppresses generation of failures such as cracks or breakage of glass substrates or a sealing layer even when the distance between two glass substrates is narrowed, and thereby makes it possible to improve the sealin
The invention provides a glass member provided with a sealing material layer, which suppresses generation of failures such as cracks or breakage of glass substrates or a sealing layer even when the distance between two glass substrates is narrowed, and thereby makes it possible to improve the sealing property between the glass substrates and its reliability. A glass substrate has a surface provided with a sealing region, on which a sealing material layer having a thickness of at most 15 μm is formed. The sealing material layer includes a fired material of a glass material for sealing containing a sealing glass, a laser absorbent and optionally a low-expansion filler, wherein the total content of the laser absorbent and the low-expansion filler being the optional component in the glass material for sealing is within the range of from 2 to 44 vol %.
대표청구항▼
1. A glass member provided with a sealing material layer, which comprises a glass substrate having a surface having a sealing region; and a sealing material layer having a thickness of at most 15 μm and formed on the sealing region of the glass substrate; wherein the sealing material layer comprises
1. A glass member provided with a sealing material layer, which comprises a glass substrate having a surface having a sealing region; and a sealing material layer having a thickness of at most 15 μm and formed on the sealing region of the glass substrate; wherein the sealing material layer comprises a fired material of a glass material for sealing containing a sealing glass, a laser absorbent and optionally a low-expansion filler, the total content of the laser absorbent and the low-expansion filler being an optional component being within the range of from 2 to 44 vol %; andwherein the difference between the thermal expansion coefficient α1 of the material of the sealing material layer and the thermal expansion coefficient α2 of the glass substrate is within the range of from 15 to 65(×10−7/° C.). 2. The glass member provided with a sealing material layer according to claim 1, wherein the glass material for sealing contains the laser absorbent in an amount within the range of from 2 to 10 vol % and the low-expansion filler in an amount within the range of from 0 to 40 vol % based on the total amount of the sealing glass, the laser absorbent and the low-expansion filler. 3. The glass member provided with a sealing material layer according to claim 2, wherein the glass material for sealing contains the low-expansion filler in an amount within the range of from 10 to 40 vol %. 4. The glass member provided with a sealing material layer according to claim 1, wherein the total surface area of the laser absorbent and the low-expansion filler in the glass material for sealing is within the range of from 0.5 to 6 m2/cm3. 5. The glass member provided with a sealing material layer according to claim 1, wherein the low-expansion filler comprises at least one member selected from silica, alumina, zirconia, zirconium silicate, cordierite, a zirconium phosphate compound, soda lime glass and borosilicate glass. 6. The glass member provided with a sealing material layer according to claim 1, wherein the laser absorbent comprises at least one metal selected from Fe, Cr, Mn, Co, Ni and Cu or a compound containing the metal. 7. The glass member provided with a sealing material layer according to claim 1, wherein the glass substrate comprises alkali-free glass or soda lime glass, and the sealing glass comprises bismuth glass or tin-phosphate glass. 8. An electronic device which comprises a first glass substrate having a surface having a first sealing region; a second glass substrate having a surface having a second sealing region corresponding to the first sealing region and disposed so that the surface is opposed to the surface of the first glass substrate;an electronic element portion provided between the first glass substrate and the second glass substrate; anda sealing layer formed between the first sealing region of the first glass substrate and the second sealing region of the second glass substrate to seal the electronic element portion and having a thickness of at most 15 μm;wherein the sealing layer comprises a melt-bonded layer comprising a fired material of a glass material for sealing containing a sealing glass, a laser absorbent and optionally a low-expansion filler, the total content of the laser absorbent and the low-expansion filler being an optional component being within the range of from 2 to 44 vol %; andwherein the difference between the thermal expansion coefficient α1 of the material of the sealing layer and the thermal expansion coefficient α2 of at least one of the first glass substrate and the second glass substrate is within the range of from 15 to 65(×10−7/° C.). 9. The electronic device according to claim 8, wherein the difference of each of the thermal expansion coefficient α21 of the first glass substrate and the thermal expansion coefficient α22 of the second glass substrate from the thermal expansion coefficient α1 of the material of the sealing layer is within the range of from 15 to 65(×10−7/° C.). 10. The electronic device according to claim 8, wherein the difference of either one of the thermal expansion coefficient α21 of the first glass substrate and the thermal expansion coefficient α22 of the second glass substrate from the thermal expansion coefficient α1 of the material of the sealing layer is within the range of from 15 to 65(×10−7/° C.), and the difference of the other one of the thermal expansion coefficients from the thermal expansion coefficient α1 of the material of the sealing layer is less than 15×10−7/° C. 11. The electronic device according to claim 8, wherein the total surface area of the laser absorbent and the low-expansion filler in the glass material for sealing is within the range of from 0.5 to 6 m2/cm3. 12. A process for producing an electronic device, which comprises a step of preparing a first glass substrate having a surface having a first sealing region; a step of preparing a second glass substrate having a surface having a second sealing region corresponding to the first sealing region and provided with a sealing material layer having a thickness of at most 15 μm formed on the second sealing region;a step of laminating the first glass substrate and the second glass substrate with the sealing material layer interposed so that the surface of the first glass substrate and the surface of the second glass substrate are opposed to each other; anda step of irradiating the sealing material layer with a laser light through the first glass substrate or the second glass substrate to melt the sealing material layer thereby to form a sealing layer to seal the electronic element portion provided between the first glass substrate and the second glass substrate;wherein the sealing material layer comprises a fired material of a glass material for sealing containing a sealing glass, a laser absorbent and optionally a low-expansion filler, the total content of the laser absorbent and the low-expansion filler being an optional component being within the range of from 2 to 44 vol %; andwherein the difference of the thermal expansion coefficient α1 of the sealing material layer from the thermal expansion coefficient α2 of at least one of the first glass substrate and the second glass substrate is within the range of from 15 to 65(×10−7/° C.). 13. The process for producing an electronic device according to claim 12, wherein the difference of each of the thermal expansion coefficient α21 of the first glass substrate and the thermal expansion coefficient α22 of the second glass substrate from the thermal expansion coefficient α1 of the material of the sealing layer is within the range of from 15 to 65(×10−7/° C.). 14. The process for producing an electronic device according to claim 12, wherein the difference of either one of a thermal expansion coefficient α21 of the first glass substrate and a thermal expansion coefficient α22 of the second glass substrate from the thermal expansion coefficient α1 of the material of the sealing layer is within the range of from 15 to 65(×10−/° C.), and the difference of the other one of the thermal expansion coefficients from the thermal expansion coefficient α1 of the material of the sealing layer is less than 15×10−7/° C. 15. The process for producing an electronic device according to claim 12, wherein the total surface area of the laser absorbent and the low-expansion filler in the glass material for sealing is within the range of from 0.5 to 6 m2/cm3.
Shibuya, Koichi; Ide, Asahi; Kawanami, Sohei, Glass member provided with sealing material layer, and electronic device using it and process for producing the electronic device.
Watanabe, Mitsuru; Ono, Motoshi, Process and apparatus for producing glass member provided with sealing material layer and process for producing electronic device.
Dabich, II, Leonard Charles; Logunov, Stephan Lvovich; Quesada, Mark Alejandro; Streltsov, Alexander Mikhailovich, Laser welding transparent glass sheets using low melting glass or thin absorbing films.
Dabich, II, Leonard Charles; Logunov, Stephan Lvovich; Quesada, Mark Alejandro; Streltsov, Alexander Mikhailovich, Laser welding transparent glass sheets using low melting glass or thin absorbing films.
Dabich, II, Leonard Charles; Logunov, Stephan Lvovich; Quesada, Mark Alejandro; Streltsov, Alexander Mikhailovich, Laser welding transparent glass sheets using low melting glass or thin absorbing films.
Dabich, II, Leonard Charles; Logunov, Stephan Lvovich; Quesada, Mark Alejandro; Streltsov, Alexander Mikhailovich, Sealed devices comprising transparent laser weld regions.
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