IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0422348
(2012-03-16)
|
| 등록번호 |
US-8701988
(2014-04-22)
|
| 우선권정보 |
JP-2003-305805 (2003-08-29) |
|
발명자
/ 주소 |
|
| 출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
0 인용 특허 :
118 |
초록
▼
The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the
The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate, and the first single crystal integrated circuit is mounted on the plastic substrate so as to be electrically connected to the second integrated circuit.
대표청구항
▼
1. A device comprising: a plastic substrate;an IC chip over the plastic substrate;a circuit over the plastic substrate, the circuit being operationally connected to the IC chip; andan active matrix display device over the plastic substrate;wherein the circuit and the display device each comprise a s
1. A device comprising: a plastic substrate;an IC chip over the plastic substrate;a circuit over the plastic substrate, the circuit being operationally connected to the IC chip; andan active matrix display device over the plastic substrate;wherein the circuit and the display device each comprise a semiconductor element;wherein the semiconductor element comprises a semiconductor film including a channel formation region;wherein the IC chip comprises at least one of an analog circuit and a radio frequency circuit,wherein the semiconductor element is formed on an insulating film; andwherein the insulating film is bonded to the plastic substrate with an adhesive agent,wherein the circuit comprises at least one of a processor, a memory and a controller. 2. The device according to claim 1, wherein the IC chip is mounted over the plastic substrate by a chip on glass method. 3. The device according to claim 1, wherein the device has a card-shape having a thickness of 0.5 mm or more and 1.5 mm or less. 4. The device according to claim 1, wherein the insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. 5. The device according to claim 1, wherein the IC chip is electrically connected with an antenna coil. 6. The device according to claim 1, wherein the display device is a liquid crystal display device. 7. The device according to claim 1, wherein the display device is a light emitting device. 8. A device comprising: a plastic substrate;an antenna over the plastic substrate;an IC chip over the plastic substrate wherein the IC chip is operationally connected to the antenna;a circuit over the plastic substrate, the circuit being operationally connected to the IC chip; andan active matrix display device over the plastic substrate;wherein the circuit and the display device each comprise a semiconductor element;wherein the semiconductor element comprises a semiconductor film including a channel formation region;wherein the IC chip comprises at least one of an analog circuit and a radio frequency circuit,wherein the semiconductor element is formed on an insulating film;wherein the insulating film is bonded to the plastic substrate with an adhesive agent, andwherein the circuit comprises at least one of a processor, a memory and a controller. 9. The device according to claim 8, wherein the IC chip is mounted over the plastic substrate by a chip on glass method. 10. The device according to claim 8, wherein the device has a card-shape having a thickness of 0.5 mm or more and 1.5 mm or less. 11. The device according to claim 8, wherein the insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. 12. The device according to claim 8, wherein the antenna includes a coil. 13. The device according to claim 8, wherein the display device is a liquid crystal display device. 14. The device according to claim 8, wherein the display device is a light emitting device. 15. A device comprising: a plastic substrate;an IC chip over the plastic substrate;a circuit over the plastic substrate, the circuit being operationally connected to the IC chip; andan active matrix display device over the plastic substrate;wherein the circuit and the display device each comprise a semiconductor element;wherein the semiconductor element comprises a semiconductor film including a channel formation region;wherein the IC chip comprises at least one of an analog circuit and a radio frequency circuit,wherein the semiconductor element is formed on an insulating film; andwherein the insulating film is bonded to the plastic substrate with an adhesive agent,wherein a metal oxide layer is in contact with a portion of the insulating film between the insulating film and the plastic substrate. 16. The device according to claim 15, wherein the circuit comprises at least one of a processor, a memory and a controller. 17. The device according to claim 15, wherein the insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. 18. The device according to claim 15, wherein the display device is a light emitting device.
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