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Target designs and related methods for coupled target assemblies, methods of production and uses thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/34
출원번호 US-0838166 (2007-08-13)
등록번호 US-8702919 (2014-04-22)
발명자 / 주소
  • Ferrasse, Stephane
  • Hort, Werner H.
  • Kim, Jaeyeon
  • Alford, Frank C.
출원인 / 주소
  • Honeywell International Inc.
대리인 / 주소
    Faegre Baker Daniels LLP
인용정보 피인용 횟수 : 2  인용 특허 : 99

초록

Sputtering targets are described that comprise: a) a target surface component comprising a target material; b) a core backing component having a coupling surface, a back surface and at least one open area, wherein the coupling surface is coupled to at least part of the target surface component; and

대표청구항

1. A sputtering target, comprising: a front target surface;a back target surface opposite the front target surface;a target surface component comprising a target material; anda core backing component having a coupling surface, a back surface, a thickness and at least one opening or open area through

이 특허에 인용된 특허 (99)

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이 특허를 인용한 특허 (2)

  1. Yuan, Yongwen; Ivanov, Eugene Y.; Liu, Yang; Frausto, Phil; Miao, Weifang, Silicon sputtering target with special surface treatment and good particle performance and methods of making the same.
  2. West, Brian T.; Cox, Michael S.; Oh, Jeonghoon, Sputtering target with backside cooling grooves.
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