Methods of manufacturing large-area sputtering targets by cold spray
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-001/02
B05D-001/38
출원번호
US-0628089
(2012-09-27)
등록번호
US-8703233
(2014-04-22)
발명자
/ 주소
Miller, Steven A.
Dary, Francois-Charles
Gaydos, Mark
Rozak, Gary
출원인 / 주소
H.C. Starck Inc.
대리인 / 주소
Bingham McCutchen LLP
인용정보
피인용 횟수 :
4인용 특허 :
155
초록▼
In various embodiments, a joined sputtering target is formed by filling at least a portion of a gap between two discrete sputtering-target tiles with a gap-fill material, spray-depositing a spray material to form a partial joint, removing at least a portion of the gap-fill material, and, thereafter,
In various embodiments, a joined sputtering target is formed by filling at least a portion of a gap between two discrete sputtering-target tiles with a gap-fill material, spray-depositing a spray material to form a partial joint, removing at least a portion of the gap-fill material, and, thereafter, spray-depositing the spray material to join the tiles.
대표청구항▼
1. A method of forming a joined sputtering target comprising a sputtering material, the method comprising: disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other to form an interface between the tiles, the interface comprising a gap;filling at least a
1. A method of forming a joined sputtering target comprising a sputtering material, the method comprising: disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other to form an interface between the tiles, the interface comprising a gap;filling at least a portion of the gap with a gap-fill material;spray-depositing a spray material on at least a portion of the gap-fill material to form a partial joint;thereafter, removing at least a portion of the gap-fill material from the interface; andafter removal of the at least a portion of the gap-fill material, spray-depositing the spray material on at least a portion of the partial joint to join the tiles and form the joined sputtering target. 2. The method of claim 1, wherein filling the at least a portion of the gap with the gap-fill material alters a microstructure of at least one of the tiles in a region proximate the interface. 3. The method of claim 2, further comprising, prior to spray-depositing the spray material on at least a portion of the partial joint, removing at least a portion of the altered-microstructure region. 4. The method of claim 1, wherein the gap-fill material comprises a weld bead. 5. The method of claim 1, wherein the gap-fill material comprises a rod shaped to fill at least a portion of the gap. 6. The method of claim 5, wherein the rod is hollow. 7. The method of claim 1, wherein the sputtering material comprises a mixture or alloy of at least two constituent materials. 8. The method of claim 7, wherein the gap-fill material comprises at least one of the constituent materials. 9. The method of claim 7, wherein the at least two constituent materials comprise Mo and Ti. 10. The method of claim 7, wherein the spray material comprises at least one of the constituent materials. 11. The method of claim 1, wherein the spray material comprises the sputtering material. 12. The method of claim 11, wherein the spray material consists essentially of the sputtering material. 13. The method of claim 1, wherein the tiles consist essentially of the sputtering material. 14. The method of claim 1, wherein the gap-fill material comprises the sputtering material. 15. The method of claim 1, wherein at least a portion of each of the two tiles is substantially planar. 16. The method of claim 1, wherein at least a portion of each of the two tiles is substantially tubular. 17. The method of claim 1, wherein the interface comprises at least one recess defined by a beveled surface of at least one of the two tiles. 18. The method of claim 17, wherein the spray material substantially fills the at least one recess to form a surface substantially coplanar with a surface of at least one of the tiles. 19. The method of claim 17, wherein the beveled surface is reentrant. 20. The method of claim 17, wherein at least a portion of the beveled surface is substantially planar and forms an angle of greater than 45° with respect to a normal to a top surface of the joined sputtering target. 21. The method of claim 20, wherein the angle is selected from the range of 45° to 60°. 22. The method of claim 17, wherein spray-depositing the spray material on at least a portion of the gap-fill material or spray-depositing the spray material on at least a portion of the partial joint comprises spray-depositing at an angle approximately perpendicular to the beveled surface. 23. The method of claim 22, wherein spray-depositing the spray material on at least a portion of the gap-fill material or spray-depositing the spray material on at least a portion of the partial joint comprises: spray-depositing a first portion of the spray material at an angle approximately perpendicular to the beveled surface; andthereafter, spray-depositing a second portion of the spray material at an angle approximately perpendicular to a top surface of the joined sputtering target. 24. The method of claim 1, further comprising, after forming the joined sputtering target, annealing the joined sputtering target at a temperature selected from the range of approximately 480° C. to approximately 1425° C. 25. The method of claim 1, further comprising, after forming the joined sputtering target, disposing the joined sputtering target on a backing plate. 26. The method of claim 1, further comprising, after forming the joined sputtering target, heat treating the joined sputtering target at least proximate the spray material. 27. The method of claim 1, wherein at least one of spray-depositing the spray material on at least a portion of the gap-fill material or spray-depositing the spray material on at least a portion of the partial joint comprises a cold-spray technique.
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