초록

A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by spray forming.

대표청구항 ▼

1. A method of making a sputtering target, comprising: providing a backing structure, andforming a copper indium gallium sputtering target material on the backing structure by spray forming wherein:from 0% to 10% of primary phase regions in the sputtering target material are of a size greater than 3

1. A method of making a sputtering target, comprising: providing a backing structure, andforming a copper indium gallium sputtering target material on the backing structure by spray forming wherein:from 0% to 10% of primary phase regions in the sputtering target material are of a size greater than 30 μm in any random 1 cm by 1 cm area of the sputtering target;an average primary phase region in the sputtering target material is of a size not greater than 10 μm; andthe sputtering target material has an overall uniform composition. 2. A method as claimed in claim 1, wherein the sputtering target material is provided in a liquid state from a tundish into at least one gas jet to create a liquid droplet spray. 3. A method as claimed in claim 2, wherein the sputtering target material is formed by spraying the entire sputtering target material directly onto the backing structure having a planar shape. 4. A method as claimed in claim 2, wherein the sputtering target material is formed by spraying the entire sputtering target material directly onto the backing structure comprising a cylindrical backing structure to form a rotary sputtering target. 5. A method as claimed in claim 4, wherein the sputtering target material droplet spray is provided onto the cylindrical backing structure that is rotated about its axis and moved parallel to its axis. 6. A method as claimed in claim 4, wherein the sputtering target material droplet spray is provided from the tundish through a slit shaped opening having about a same length as an axial length of the cylindrical backing structure. 7. A method as claimed in claim 6, wherein the sputtering target material droplet spray provided from the tundish has about the same length as the axial length of the cylindrical backing structure. 8. A method as claimed in claim 6, wherein the cylindrical backing structure rotates about its axis but is not moved along its axis while the sputtering target material droplet spray is provided onto the backing structure. 9. A method as claimed in claim 6, wherein the slit shaped opening has a variable width such that more sputtering target material is deposited on the backing structure at a location corresponding to a wider opening width than at a location corresponding to a narrower opening width. 10. A method as claimed in claim 2, further comprising heating the backing structure before the sputtering target material droplet spray is provided onto the backing structure. 11. A method as claimed in claim 2, further comprising cooling the backing structure at least one of during and after the sputtering target material droplet spray is provided onto the backing structure. 12. A method as claimed in claim 2, wherein the liquid sputtering target material is provided from the tundish in a controlled environment. 13. A method as claimed in claim 2, wherein the sputtering target material droplet spray and the backing structure are contained within a controlled environment. 14. A method as claimed in claim 2, further comprising adding metallic sodium or a sodium compound to the liquid copper indium gallium sputtering target material. 15. A method as claimed in claim 2, further comprising providing solid particles into the liquid droplet spray. 16. A method as claimed in claim 15, wherein the solid particles comprise sodium containing particles which are provided into the spray to create a substantially homogenous distribution of sodium containing particles within the target. 17. A method as claimed in claim 1, wherein the sputtering target material has an overall uniform composition of about 29-41 wt % copper, about 36-62 wt % indium, and about 8-25 wt % gallium. 18. A method as claimed in claim 1, wherein the sputtering target material has an overall uniform composition of about 8-15 wt % copper, about 55-80 wt % indium, and about 10-25 wt % gallium. 19. A method as claimed in claim 1, wherein the sputtering target material is formed by rapid solidification of the liquid sputtering target material on the backing structure at a rate of approximately 100° C./s, or greater. 20. A method as claimed in claim 1, wherein the target material further comprises a metallic Na or Na-containing compound, and the target material contains 0.1 wt % to 1.0 wt % Na. 21. A method of making a sputtering target, comprising: providing a backing structure, andforming a copper indium gallium sputtering target material on the backing structure by spray forming, wherein:from 0% to 10% of primary phase regions in the sputtering target material are of a size greater than 10 μm in any random 1 cm by 1 cm area of the sputtering target;an average primary phase region in the sputtering target material is of a size between 0.5 and 10 μm; andthe sputtering target material has an overall uniform composition. 22. A method of making a sputtering target, comprising: providing a backing structure, andforming a copper indium gallium sputtering target material on the backing structure by spray forming, wherein:from 1% to 5% of primary phase regions in the sputtering target material are of a size greater than 10 μm in any random 1 cm by 1 cm area of the sputtering target;an average primary phase region in the sputtering target material is of a size between 1 and 5 μm; andthe sputtering target material has an overall uniform composition.