IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0221244
(2011-08-30)
|
등록번호 |
US-8710526
(2014-04-29)
|
발명자
/ 주소 |
- Ramer, David P.
- Rains, Jr., Jack C.
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
32 |
초록
▼
A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an
A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an electrical signal in response to light. The thermal conductivity and phase transition between evaporation and condensation, of the thermal conductivity and phase transition heat transfer mechanism, cools the active optical element during operation. At least a portion of the active optical element is exposed to a working fluid within a vapor tight chamber of the heat transfer mechanism. The heat transfer mechanism includes a member that is at least partially optically transmissive to allow passage of light to or from the active optical element and to seal the chamber of the heat transfer mechanism with respect to vapor contained within the chamber.
대표청구항
▼
1. A thermal conductivity and phase transition heat transfer mechanism, comprising: a housing having a section that is thermally conductive and a member, that is at least partially optically transmissive, connected to the thermally conductive section to form a seal for a vapor tight chamber enclosed
1. A thermal conductivity and phase transition heat transfer mechanism, comprising: a housing having a section that is thermally conductive and a member, that is at least partially optically transmissive, connected to the thermally conductive section to form a seal for a vapor tight chamber enclosed by the housing;a working fluid within the chamber; andan active optical element to be cooled by phase transition of the heat transfer mechanism, wherein:the active optical element is configured to be driven to emit light and/or driven by light to produce an electrical current, through the optically transmissive member,at least a portion of the active optical element is at least partially exposed within the chamber so as to be incorporated in or in contact with the working fluid, andpressure within the chamber configures the working fluid to absorb heat during operation of the active optical element, to vaporize at a relatively hot location of the mechanism as it absorbs heat from the operation of the active optical element, to transfer heat to and condense at a relatively cold location of the mechanism, and to return as a liquid to the relatively hot location of the mechanism. 2. The mechanism of claim 1, wherein: the mechanism is configured as a light emitting device; andthe active optical element comprises a semiconductor light emitter positioned to emit light through the optically transmissive member, the semiconductor light emitter having at least one surface exposed within the chamber. 3. The mechanism of claim 2, further comprising a wicking structure extending over at least one interior surface of the vapor chamber and at least a portion of the at least one exposed surface of the semiconductor light emitter. 4. The mechanism of claim 3, wherein a part of the wicking structure comprises grooves formed in the at least one surface of the semiconductor light emitter exposed within the chamber. 5. The mechanism of claim 3, wherein a part of the wicking structure comprises nanowires extending into the vapor chamber from the at least one surface of the semiconductor light emitter exposed within the chamber. 6. The mechanism of claim 3, wherein at least a portion of the wicking structure comprises phosphor nanowires. 7. The mechanism of claim 3, wherein at least a portion of the wicking structure is at least substantially reflective. 8. The mechanism of claim 2, wherein the working fluid is electrically conductive for carrying electrical current to or from a portion of the semiconductor light emitter during operation of the semiconductor light emitter. 9. The mechanism of claim 2, further comprising a phosphor within the chamber. 10. The mechanism of claim 2, wherein the semiconductor light emitter is a type of emitter selected from the group consisting of: a light emitting diode (LED), an organic light emitting diode (OLED), and a laser diode. 11. The mechanism of claim 1, wherein the active optical element comprises a phosphor within the chamber. 12. The mechanism of claim 11, wherein the phosphor is an opto-luminescent type of phosphor. 13. The mechanism of claim 11, wherein the phosphor is an electroluminescent type of phosphor. 14. The mechanism of claim 11, wherein the phosphor is carried by the working fluid within the chamber. 15. The mechanism of claim 11, further comprising a wicking structure extending over at least one interior surface of the chamber. 16. The mechanism of claim 15, wherein at least a portion of the wicking structure is at least substantially reflective. 17. The mechanism of claim 15, wherein the phosphor is formed in at least a portion of the wicking structure. 18. The mechanism of claim 1, wherein: the mechanism is configured as a light emitting device; andthe active optical element comprises an electroluminescent light emitting device positioned to emit light through the optically transmissive member, the electroluminescent light emitting device having at least one surface exposed within the chamber. 19. The mechanism of claim 18, wherein the electroluminescent light emitting device comprises a phosphor and at least one electrode for applying electrical energy to excite the phosphor. 20. The mechanism of claim 19, wherein the working fluid is electrically conductive for carrying electrical current to or from the electrode of the electroluminescent light emitting device during operation of the electroluminescent light emitting device. 21. The mechanism of claim 19, wherein the electrode of the electroluminescent light emitting device is at least substantially transparent for allowing transmission of light from the phosphor for emission through optically transmissive member. 22. The mechanism of claim 18, further comprising a wicking structure extending over at least one interior surface of the vapor chamber and at least a portion of the at least one exposed surface of the electroluminescent light emitting device. 23. The mechanism of claim 22, wherein a part of the wicking structure comprises grooves formed in the at least one surface of the electroluminescent light emitting device exposed within the chamber. 24. The mechanism of claim 22, wherein a part of the wicking structure comprises nanowires extending into the vapor chamber from the at least one surface of the electroluminescent light emitting device exposed within the chamber. 25. The mechanism of claim 22, wherein at least a portion of the wicking structure is at least substantially reflective. 26. The mechanism of claim 1, wherein: the mechanism is configured as an optical-to-electrical transducer; andthe active optical element comprises an optical-to-electrical converter positioned to receive light through the optically transmissive member, the optical-to-electrical converter having at least one surface exposed within the chamber. 27. The mechanism of claim 26, further comprising a wicking structure extending over at least one interior surface of the vapor chamber and at least a portion of the at least one exposed surface of the optical-to-electrical converter. 28. The mechanism of claim 27, wherein: the optical-to-electrical converter is a semiconductor device; anda part of the wicking structure comprises grooves formed in the at least one surface of the semiconductor device exposed within the chamber. 29. The mechanism of claim 27, wherein: the optical-to-electrical converter is a semiconductor device; anda part of the wicking structure comprises nanowires extending into the vapor chamber from at least one surface of the semiconductor device exposed within the chamber. 30. The mechanism of claim 27, wherein at least a portion of the wicking structure comprises phosphor nanowires. 31. The mechanism of claim 27, wherein at least a portion of the wicking structure is at least substantially reflective. 32. The mechanism of claim 26, wherein the working fluid is electrically conductive for carrying electrical current to or from a portion of the optical-to-electrical transducer during operation of the optical-to-electrical transducer. 33. The mechanism of claim 26, further comprising a phosphor within the chamber. 34. The transducer of claim 26, wherein the optical-to-electrical converter is a photovoltaic. 35. The transducer of claim 26, wherein the optical-to-electrical converter is a semiconductor configured for detecting light. 36. A thermal conductivity and phase transition heat transfer mechanism, comprising: a housing having a section that is thermally conductive and a member, that is at least partially optically transmissive, connected to the thermally conductive section to form a seal for a vapor tight chamber enclosed by the housing;a semiconductor device to be cooled by phase transition of the heat transfer mechanism, the semiconductor device being of a type configured to be driven to emit light and/or driven by light to produce an electrical current, through the optically transmissive member, wherein at least a surface of the semiconductor device is at least partially exposed within the chamber; anda working fluid within the chamber, wherein:pressure within the chamber configures the working fluid to absorb heat during operation of the semiconductor device, to vaporize at a relatively hot location of the mechanism as it absorbs heat from the operation of the semiconductor device, to transfer heat to and condense at a relatively cold location of the mechanism, and to return as a liquid to the relatively hot location of the mechanism, andthe working fluid is electrically conductive for carrying electrical current to or from a portion of the surface of the semiconductor device during operation of the semiconductor device. 37. The mechanism of claim 36, wherein the semiconductor device is a light emitting diode, an electroluminescent device, a photodiode or a photovoltaic device. 38. The mechanism of claim 36, wherein at least a portion the semiconductor device comprises semiconductor nanowires. 39. A thermal conductivity and phase transition heat transfer mechanism, comprising: a housing having a section that is thermally conductive and a member, that is at least partially optically transmissive, connected to the thermally conductive section to form a seal for a vapor tight chamber enclosed by the housing;a working fluid within the chamber; andan electroluminescent light emitter, including an electroluminescent material of a type configured to be driven to emit light for passage through the optically transmissive member, wherein at least a portion of the electroluminescent light emitter is exposed to the working fluid within the chamber, wherein:pressure within the chamber configures the working fluid to absorb heat during operation of the electroluminescent light emitter, to vaporize at a relatively hot location of the mechanism as it absorbs heat from the operation of the electroluminescent light emitter including at least some heat from the electroluminescent material, to transfer heat to and condense at a relatively cold location of the mechanism, and to return as a liquid to the relatively hot location of the mechanism. 40. The mechanism of claim 39, wherein the electroluminescent light emitter comprises a thin film structure formed on a wall of the chamber. 41. The mechanism of claim 39, wherein the electroluminescent light emitter comprises electroluminescent nanowires. 42. The mechanism of claim 41, wherein the nanowires comprise an electroluminescent phosphor. 43. The mechanism of claim 39, wherein the electroluminescent light emitter comprises an electroluminescent phosphor.
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