이 특허에 인용된 특허 (38)

1. Yamada, Hirotake; Shimura, Sadanori; Ohashi, Tsuneaki, Anti-corrosive parts for etching apparatus.

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2. Christodoulou Leontios (Baltimore MD) Nagle Dennis C. (Ellicott City MD) Brupbacher John M. (Baltimore MD), Arc-melting process for forming metallic-second phase composites.

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3. Shih Hong ; Han Nianci ; Mak Steve S. Y. ; Yin Gerald Zheyao, Boron carbide parts and coatings in a plasma reactor.

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4. Kordina, Olof Claes Erik; Rao, Shailaja, Crystal growth method and reactor design.

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5. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.

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6. Funato Yoshio,JPX ; Furukawa Koji,JPX ; Yamamoto Hisao,JPX ; Kageyama Nobuo,JPX, Jig for heat treatment and process for fabricating the jig.

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7. Nishioka Masao,JPX ; Kato Naotaka,JPX, Light-impermeable, high purity silicon carbide material, a light shielding member for a semiconductor-treating apparatus, and a semiconductor-treating apparatus.

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8. Barton Thomas J. ; Anderson Iver E. ; Ijadi-Maghsoodi Sina ; Nosrati Mohammad ; Unal Ozer, Low temperature joining of ceramic composites.

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9. Naito, Masami; Hara, Kazukuni; Hirose, Fusao; Onda, Shoichi, Manufacturing method of silicon carbide single crystals.

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10. Naito,Masami; Hara,Kazukuni; Hirose,Fusao; Onda,Shoichi, Manufacturing method of silicon carbide single crystals.

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11. Chayka Paul V., Method for liquid delivery chemical vapor deposition of carbide films on substrates.

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12. Dmitriev Vladimir A. (Fuquay-Varina NC) Rendakova Svetlana V. (St. Petersburg RUX) Ivantsov Vladimir A. (St. Petersburg RUX) Carter ; Jr. Calvin H. (Cary NC), Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structu.

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13. Angelini Peter (Oak Ridge TN) DeVore Charles E. (Knoxville TN) Lackey Walter J. (Oak Ridge TN) Blanco Raymond E. (Oak Ridge TN) Stinton David P. (Knoxville TN), Method of deposition of silicon carbide layers on substrates and product.

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14. Loboda Mark J. (Midland MI), Method of forming crystalline silicon carbide coatings.

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15. Loboda Mark J. (Midland MI) Li Ji-Ping (Cincinnati OH) Steckl Andrew J. (Cincinnati OH) Yuan Chong (Cincinnati OH), Method of forming crystalline silicon carbide coatings at low temperatures.

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16. Kong Hua-Shuang (Raleigh NC) Carter ; Jr. Calvin H. (Cary NC), Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon car.

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17. Okamoto Atsuto,JPX ; Sugiyama Naohiro,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX ; Wakayama Hiroaki,JPX ; Fukushima Yoshiaki,JPX ; Hara Kazukuni,JPX ; Hirose Fusao,JPX ; Onda Shoichi,JPX ; Hara Kuni, Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same.

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18. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.

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19. Golecki Ilan (Parsippany NJ), Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degree.

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20. Wang, Shaoping; Kopec, Aneta; Ware, Rodd Mitchell; Holmes, Sonia, Method of silicon carbide monocrystalline boule growth.

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21. AmRhein, Fred; Pomarede, Christophe, Plasma etch resistant coating and process.

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22. Kobayashi, Yoshiyuki, Plasma treating apparatus and plasma treating method.

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23. Sullivan Thomas M., Polycrystalline silicon carbide ceramic wafer and substrate.

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24. Lin, Yixing; Xu, Daijiang; Stow, Clifford, Process chamber component with layered coating and method.

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25. Lin, Yixing; Xu, Dajiang; Stow, Clifford, Process chamber component with layered coating and method.

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26. Okada Kaoru (Kawasaki JPX) Nakajima Keihachiro (Yokohama JPX) Kato Hitoshi (Tokyo JPX), Process for producing silicon carbide material.

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27. Timmermans, Eric A. H.; Teepen, Maarten J.; Mucciato, Raffaele; Wilhelm, Rudi, Reactor precoating for reduced stress and uniform CVD.

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28. Bosch, William Frederick, Semiconductor processing equipment having improved particle performance.

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29. Kuznetsov, Vladimir, Semiconductor processing parts having apertures with deposited coatings and methods for forming the same.

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30. Otsuki,Hayashi; Nogami,Satoru, SiC material, semiconductor device fabricating system and SiC material forming method.

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31. Shiomi, Hiromu; Kimoto, Tsunenobu; Matsunami, Hiroyuki, SiC wafer, SiC semiconductor device, and production method of SiC wafer.

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32. Shiomi, Hiromu; Kimoto, Tsunenobu; Matsunami, Hiroyuki, Sic single crystal and method for growing the same.

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33. Brese,Nathaniel E.; Goela,Jitendra S.; Pickering,Michael A., Silicon carbide with high thermal conductivity.

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34. Tanino Kichiya,JPX, Single crystal SIC and a method of producing the same.

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35. Tanino Kichiya,JPX ; Hiramoto Masanobu,JPX, Single crystal SIC and method of producing the same.

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36. Tanino Kichiya,JPX ; Hiramoto Masanobu,JPX, Single crystal SiC and a method of producing the same.

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37. Tanino Kichiya,JPX, Single crystal and method of producing the same.

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38. Akiyama Kazuyoshi,JPX ; Aoike Tatsuyuki,JPX ; Shirasuna Toshiyasu,JPX ; Murayama Hitoshi,JPX ; Otsuka Takashi,JPX ; Tazawa Daisuke,JPX ; Hosoi Kazuto,JPX, Vacuum processing apparatus and vacuum processing method.

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