초록 ▼

Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrink

Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.

대표청구항 ▼

1. A method of processing a partially fabricated integrated circuit substrate, comprising curing a dielectric layer of the partially fabricated integrated circuit substrate with modulated ultraviolet curing radiation, wherein curing the dielectric layer comprises exposing the dielectric layer to mul

1. A method of processing a partially fabricated integrated circuit substrate, comprising curing a dielectric layer of the partially fabricated integrated circuit substrate with modulated ultraviolet curing radiation, wherein curing the dielectric layer comprises exposing the dielectric layer to multiple cycles of modulated ultraviolet radiation, wherein each cycle of modulated ultraviolet radiation includes: (a) exposing the dielectric layer to ultraviolet radiation during a first time increment, and(b) exposing the dielectric layer to ultraviolet radiation during a second time increment,wherein at least one of wavelength and spectral distribution of the ultraviolet radiation is varied from (a) to (b). 2. The method of claim 1, further comprising transitioning from (a) to (b) by moving the substrate out of and then into ultraviolet radiation exposure areas. 3. The method of claim 1, wherein the wavelength is varied from (a) to (b). 4. The method of claim 1, wherein the spectral distribution is varied from (a) to (b). 5. The method of claim 1, wherein the modulated ultraviolet curing radiation further modulates duration of exposure. 6. The method of claim 1, wherein the dielectric layer is an inter-level or inter-metal dielectric layer of the partially fabricated integrated circuit substrate. 7. The method of claim 1, wherein the dielectric layer is a hardmask. 8. The method of claim 1, wherein the dielectric layer is a packaging layer. 9. The method of claim 1, wherein the dielectric layer is a silicon oxide layer. 10. The method of claim 9, wherein the silicon oxide layer is a carbon-doped silicon oxide layer. 11. A method of processing a dielectric layer on a substrate, said method comprising curing the dielectric layer with modulated ultraviolet curing radiation, wherein the curing the dielectric layer with the modulated ultraviolet curing radiation comprises exposing the dielectric layer on the substrate to at least two cycles of ultraviolet curing radiation and wherein at least one of wavelength and spectral distribution of the ultraviolet radiation are varied within each cycle and wherein the dielectric layer is part of a partially fabricated integrated circuit substrate. 12. The method of claim 11, wherein the dielectric layer comprises silicon. 13. The method of claim 11, wherein the dielectric layer shrinks by less than 25%, and a dielectric constant of the dielectric layer changes by less than 8%. 14. The method of claim 11, wherein curing the dielectric layer comprises moving the substrate into and out of ultraviolet radiation exposure areas. 15. The method of claim 11, wherein the dielectric layer is an inter-level or inter-metal dielectric layer of the partially fabricated integrated circuit substrate. 16. The method of claim 11, wherein the dielectric layer is a hardmask or packaging layer. 17. The method of claim 11, wherein the dielectric layer is a packaging layer. 18. The method of claim 11, wherein the dielectric layer is a silicon oxide layer.