초록 ▼

A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer sur

A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

대표청구항 ▼

1. A method of forming a semiconductor device, comprising: providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;exposing the patterned substrate to a process gas comprising a metal-containing precursor to adsorb the metal-containing precursor on the Cu

1. A method of forming a semiconductor device, comprising: providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;exposing the patterned substrate to a process gas comprising a metal-containing precursor to adsorb the metal-containing precursor on the Cu metal surfaces and on the dielectric layer surfaces; andirradiating the adsorbed metal-containing precursor on the Cu metal surfaces and on the dielectric layer surfaces with electromagnetic radiation to desorb the adsorbed metal-containing precursor from the dielectric surfaces, and thereby form a metal-containing cap layer on the Cu metal surfaces but not on the dielectric layer surfaces. 2. The method of claim 1, wherein the metal-containing cap layer comprises a Ru metal layer, a Co metal layer, a Mo metal layer, a W metal layer, a Pt metal layer, an Ir metal layer, a Rh metal layer, or a Re metal layer, or a combination thereof. 3. The method of claim 1, wherein the metal-containing cap layer comprises Ru, Co, Mo, W, Pt, Ir, Rh, or Re, and a dopant selected from oxygen, nitrogen, boron, phosphorus, silicon, germanium, or a combination thereof. 4. The method of claim 1, wherein the metal-containing precursor comprises a Ru-containing precursor, a Co-containing precursor, a Mo-containing precursor, a W-containing precursor, a Pt-containing precursor, an Ir-containing precursor, a Rh-containing precursor, or a Re-containing precursor, or a combination of two or more thereof. 5. The method of claim 1, wherein the process gas further comprises a dopant gas containing an oxygen-containing gas, a nitrogen-containing gas, a nitrogen-oxygen-containing gas, a boron-containing gas, or a phosphorus-containing gas, or a combination thereof. 6. The method of claim 1, wherein the electromagnetic radiation comprises ultra-violet radiation. 7. The method of claim 6, wherein the electromagnetic radiation comprises Xe2 radiation at about 172 nm, KrCl radiation at about 222 nm, KrF radiation at about 248 nm, F2 radiation at about 157 nm, ArF radiation at about 193 nm, XeCl radiation at about 308 nm, or XeF radiation at about 351 nm, or a combination of two or more thereof. 8. The method of claim 1, wherein the exposing and irradiating have no temporal overlap. 9. The method of claim 1, wherein the exposing and irradiating have at least partial temporal overlap. 10. The method of claim 1, further comprising prior to the exposing, pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas. 11. The method of claim 10, wherein the additional electromagnetic radiation comprises ultra-violet radiation. 12. The method of claim 11, wherein the additional electromagnetic radiation comprises Xe2 radiation at about 172 nm, KrCl radiation at about 222 nm, KrF radiation at about 248 nm, F2 radiation at about 157 nm, ArF radiation at about 193 nm, XeCl radiation at about 308 nm, or XeF radiation at about 351 nm, or a combination of two or more thereof. 13. A method of forming a semiconductor device, comprising: providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;exposing the patterned substrate to a process gas comprising a metal-containing precursor to adsorb the metal-containing precursor on the Cu metal surfaces and on the dielectric layer surfaces;irradiating the Cu metal surfaces and the dielectric layer surfaces on the patterned substrate with ultra-violet electromagnetic radiation to desorb the adsorbed metal-containing precursor from the dielectric surfaces, and thereby form a metal-containing cap layer on the Cu metal surfaces but not on the dielectric layer surfaces; andprior to the exposing, pre-treating the patterned substrate with additional ultra-violet electromagnetic radiation and optionally a cleaning gas. 14. The method of claim 13, wherein the metal-containing cap layer comprises a Ru metal layer, a Co metal layer, a Mo metal layer, a W metal layer, a Pt metal layer, an Jr metal layer, a Rh metal layer, or a Re metal layer, or a combination thereof. 15. The method of claim 13, wherein the metal-containing cap layer comprises Ru, Co, Mo, W, Pt, Jr, Rh, or Re, and a dopant selected from oxygen, nitrogen, boron, phosphorus, silicon, germanium, or a combination thereof. 16. The method of claim 13, wherein the exposing and irradiating have no temporal overlap. 17. The method of claim 13, wherein the exposing and irradiating have at least partial temporal overlap. 18. A method of forming a semiconductor device, comprising: providing a patterned substrate containing planarized copper (Cu) metal surfaces and dielectric layer surfaces;exposing the patterned substrate to a process gas comprising a Ru3(CO)12 precursor to adsorb the Ru3(CO)12 precursor on the Cu metal surfaces and on the dielectric layer surfaces; andirradiating the Cu metal surfaces and the dielectric layer surfaces on the patterned substrate with electromagnetic radiation to desorb the adsorbed Ru3(CO)12 precursor from the dielectric surfaces, and thereby form a ruthenium-containing cap layer on the Cu metal surfaces but not on the dielectric layer surfaces. 19. The method of claim 18, prior to the exposing, pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas. 20. The method of claim 18, wherein the ruthenium-containing cap layer comprises Ru metal, Ru and a dopant selected from oxygen, nitrogen, boron, phosphorus, silicon, germanium, or a combination thereof.