Method of making bulk InGaN substrates and devices thereon
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/15
H01L-029/06
H01L-033/00
H01L-021/31
출원번호
US-0272981
(2011-10-13)
등록번호
US-8729559
(2014-05-20)
발명자
/ 주소
Krames, Mike
D'Evelyn, Mark
Pakalapati, Rajeev
Alexander, Alex
Kamber, Derrick
출원인 / 주소
Soraa, Inc.
대리인 / 주소
Kilpatrick Townsend & Stockton LLP
인용정보
피인용 횟수 :
14인용 특허 :
103
초록
A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
대표청구항▼
1. A method for forming a biaxially relaxed c-plane epitaxial AlxInyGa(1-x-y)N layer comprising: providing a substrate having a surface characterized by an orientation within 5 degrees of a c-plane;forming a pattern of channels in the substrate and isolated regions of the substrate defined by the ch
1. A method for forming a biaxially relaxed c-plane epitaxial AlxInyGa(1-x-y)N layer comprising: providing a substrate having a surface characterized by an orientation within 5 degrees of a c-plane;forming a pattern of channels in the substrate and isolated regions of the substrate defined by the channels, whereinthe channels are characterized by a sidewall angle with respect to the surface of the isolated regions between 60 degrees and 90 degrees and a pitch ranging from between 10 nm and 1000 nm; anda surface of the isolated regions is characterized by an orientation within 5 degrees of a c-plane;growing at least one AlxInyGa(1-x-y)N epitaxial layer on the isolated regions, comprising: growing a strained epitaxial AlxInyGa(1-x-y)N region on the isolated regions, wherein at least during initial stages of growth the strained epitaxial AlxInyGa(1-x-y)N region comprises a plurality of misfit dislocations; andincreasing a thickness of the at least one epitaxial AlxInyGa(1-x-y)N layer to cause the isolated regions to close off by lateral growth and to form a coalesced epitaxial AlxInyGa(1-x-y)N region, wherein the coalesced epitaxial AlxInyGa(1-x-y)N region is substantially free of misfit dislocations; andforming at least one biaxially relaxed c-plane epitaxial AlxInyGa(1-x-y)N layer overlying the coalesced epitaxial AlxInyGa(1-x-y)N region, whereina total thickness of the at least one epitaxial AlxInyGa(1-x-y)N layer is at least 100 nm; andthe biaxially relaxed c-plane epitaxial AlxInyGa(1-x-y)N layer is characterized by a biaxial strain less than 0.1% and a total threading dislocation density less than 108 cm−2. 2. The method of claim 1 wherein at least one epitaxial AlxInyGa(1-x-y)N layer comprises at least two epitaxial AlxInyGa(1-x-y)N layers wherein at least one epitaxial AlxInyGa(1-x-y)N layer has a graded composition. 3. The method of claim 1 further comprising subjecting the substrate to a roughening process before formation of the at least one epitaxial AlxInyGa(1-x-y)N epitaxial layer. 4. The method of claim 1 further comprising forming a second epitaxial AlxInyGa(1-x-y)N layer on a back side of the substrate. 5. The method of claim 1 wherein the total thickness of the at least one epitaxial AlxInyGa(1-x-y)N layer is greater than 1 micron. 6. The method of claim 1 wherein the at least one epitaxial AlxInyGa(1-x-y)N layer comprises at least two epitaxial AlxInyGa(1-x-y)N layers characterized by a graded composition. 7. The method of claim 1 wherein increasing the thickness of the at least one epitaxial AlxInyGa(1-x-y)N layer comprises: depositing AlxGa(1-x)N material at a first thickness of less than 100 nanometers;annealing the AlxGa(1-x)N material at a temperature ranging from between about 1000 degrees and 1400 degrees Celsius; anddepositing AlxGa(1-x)N material at a second thickness, wherein the a total thickness of the first thickness and the second thickness is greater than 100 nanometers. 8. The method of claim 1 further comprising removing the substrate and the at least one epitaxial AlxInyGa(1-x-y)N layer to form a free-standing biaxially relaxed c-plane epitaxial AlxInyGa(1-x-y)N layer, crystal, wafer, or boule. 9. The method of claim 1 further comprising fabricating a light emitting diode or a laser diode on at least a portion of the at least one epitaxial AlxInyGa(1-x-y)N layer. 10. The method of claim 1, wherein the thickness of the at least one epitaxial AlxInyGa(1-x-y)N layer is greater than 10 microns. 11. The method of claim 1, wherein the substrate comprises bulk gallium nitride. 12. The method of claim 1, wherein the substrate comprises sapphire. 13. The method of claim 1, further comprising depositing an additional epitaxial layer by hydride vapor phase epitaxy overlying the at least one AlxInyGa(1-x-y)N layer. 14. The method of claim 1, wherein, at least a portion of the at least one epitaxial AlxInyGa(1-x-y)N layer proximate to the substrate is patterned; andat least a portion of the at least one epitaxial AlxInyGa(1-x-y)N layer distal to the substrate is coalesced or continuous and relaxed, having a strain, relative to fully-relaxed AlxInyGa(1-x-y)N, of less than 0.01%. 15. The method of claim 1, wherein the at least one AlxInyGa(1-x-y)N layer comprises more than one epitaxial AlxInyGa(1-x-y)N layer, wherein at least a portion of a first epitaxial AlxInyGa(1-x-y)N layer overlying the substrate is patterned; andat least a portion of a second epitaxial AlxInyGa(1-x-y)N layer overlying the first epitaxial AlxInyGa(1-x-y)N layer is coalesced or continuous and relaxed, having a strain, relative to fully-relaxed AlxInyGa(1-x-y)N, of less than 0.01%. 16. The method of claim 1, wherein at least one of x and y is between 0.01 and 0.50. 17. A device comprising a biaxially relaxed epitaxial AlxInyGa(1-x-y)N layer formed by the method of claim 1, wherein the epitaxial AlxInyGa1-x-yN layer is characterized by: 0≦x, y, x+y≦1 and y>0.10;a surface orientation within 5 degrees of a c-plane;a thickness greater than 100 nanometer;a concentration of threading dislocations less than 108 cm−2; anda biaxial strain less than 0.1%. 18. A device, comprising at least one layer comprising AlxInyGa1-x-yN, wherein the at least one layer is characterized by: 0≦x, y, x+y≦1 and y>0.10;a surface orientation within 5 degrees of a c-plane;a thickness greater than 100 nanometer;a concentration of threading dislocations less than 108 cm−2; anda biaxial strain less than 0.1%. 19. The device of claim 18 wherein the device is selected from among a light emitting diode, a laser diode, a photodetector, an avalanche photodiode, a transistor, a rectifier, and a thyristor; one of a transistor, a rectifier, a Schottky rectifier, a thyristor, a p-i-n diode, a metal-semiconductor-metal diode, high-electron mobility transistor, a metal semiconductor field effect transistor, a metal oxide field effect transistor, a power metal oxide semiconductor field effect transistor, a power metal insulator semiconductor field effect transistor, a bipolar junction transistor, a metal insulator field effect transistor, a heterojunction bipolar transistor, a power insulated gate bipolar transistor, a power vertical junction field effect transistor, a cascode switch, an inner sub-band emitter, a quantum well infrared photodetector, a quantum dot infrared photodetector, a solar cell, and a diode for photoelectrochemical water splitting and hydrogen generation.
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