IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0628092
(2012-09-27)
|
등록번호 |
US-8734896
(2014-05-27)
|
발명자
/ 주소 |
- Volchko, Scott Jeffrey
- Zimmermann, Stefan
- Miller, Steven A.
- Stawovy, Michael Thomas
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
154 |
초록
▼
A joined sputtering target comprising a sputtering material is formed by disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising at least one of an interlocking joint therein or a
A joined sputtering target comprising a sputtering material is formed by disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising at least one of an interlocking joint therein or a recess in a top surface thereof, and spray-depositing a spray material over at least a portion of the interface, thereby joining the tiles to form the joined sputtering target.
대표청구항
▼
1. A method of forming a joined sputtering target comprising a sputtering material, the method comprising: disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising at least one of
1. A method of forming a joined sputtering target comprising a sputtering material, the method comprising: disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising at least one of an interlocking joint therein or a recess in a top surface thereof;spray-depositing a spray material over at least a portion of the interface, thereby joining the tiles to form the joined sputtering target, the joined sputtering target having a residual stress after the spray-deposition of the spray material;after spray-depositing the spray material, annealing the joined sputtering target at an annealing temperature, whereby the residual stress is reduced or substantially eliminated; andafter annealing, attaching the joined sputtering target to a backing plate with a joining compound, at least one of the backing plate or the joining compound having a melting point lower than the annealing temperature. 2. The method of claim 1, wherein disposing the two tiles proximate each other comprises disposing the two tiles in contact with each other along at least a portion of the interface prior to spray-depositing the spray material. 3. The method of claim 1, wherein at least a portion of each of the two tiles is substantially planar. 4. The method of claim 1, wherein (i) each of the two tiles is curved so as to define at least a portion of a tube, and (ii) the backing plate is substantially tubular, the joined sputtering target being disposed on an outer curved surface of the backing plate. 5. The method of claim 1, wherein the spray material comprises the sputtering material. 6. The method of claim 5, wherein the spray material consists essentially of the sputtering material. 7. The method of claim 1, wherein the tiles consist essentially of the sputtering material. 8. The method of claim 1, wherein the sputtering material comprises a mixture or alloy of at least two constituent materials. 9. The method of claim 8, wherein the at least two constituent materials comprise Mo and Ti. 10. The method of claim 8, wherein the spray material comprises at least one of the constituent materials. 11. The method of claim 1, wherein the interface comprises a recess, and the spray deposition fills at least a portion of the recess with the spray material. 12. The method of claim 1, wherein the interface comprises a recess defined by a beveled surface of at least one of the two tiles. 13. The method of claim 12, wherein the beveled surface is reentrant. 14. The method of claim 12, wherein at least a portion of the beveled surface is substantially planar and forms an angle of greater than 45° with respect to a normal to a top surface of the joined sputtering target. 15. The method of claim 14, wherein the angle is selected from the range of 45° to 60°. 16. The method of claim 1, wherein the annealing temperature is selected from the range of approximately 480° C. to approximately 1425° C. 17. The method of claim 1, wherein the interface comprises an interlocking joint, the interlocking joint comprising a tongue-in-groove joint, a dovetail joint, a rabbet joint, a finger joint, or a spline joint. 18. The method of claim 1, wherein the interface comprises a recess, and further comprising, prior to disposing the tiles proximate each other, beveling an edge of at least one of the tiles, the at least one beveled edge forming at least a portion of the recess. 19. The method of claim 1, wherein spray-depositing the spray material comprises a cold spray technique. 20. The method of claim 1, further comprising sputtering the joined sputtering target, the spray-deposited spray material substantially preventing particle generation at the interface. 21. The method of claim 1, wherein the interface defines a plane that is not perpendicular to at least one of a top surface of the joined sputtering target or a bottom surface of the joined sputtering target. 22. The method of claim 1, wherein the residual stress is compressive. 23. The method of claim 1, wherein the joining compound has a melting point lower than the annealing temperature. 24. The method of claim 23, wherein the joining compound comprises In solder. 25. The method of claim 1, wherein spray-depositing the spray material over at least a portion of the interface comprises (i) spray-depositing a first portion of the spray material onto a top surface of at least one of the two sputtering-target tiles proximate the interface and (ii) spray-depositing a second portion of the spray material onto a bottom surface, opposite the top surface, of at least one of the two sputtering-target tiles proximate the interface. 26. The method of claim 2, further comprising, prior to disposing the two tiles in contact with each other along at least a portion of the interface, spray-depositing a coating on at least a portion of a surface of at least one of the sputtering-target tiles, the interface comprising at least a portion of the coated surface. 27. The method of claim 26, wherein (i) the sputtering material comprises a mixture or alloy of at least two constituent materials and (ii) the coating comprises only one of the constituent materials. 28. A method of forming a joined sputtering target comprising a sputtering material, the method comprising: disposing two discrete sputtering-target tiles comprising the sputtering material proximate each other, thereby forming an interface between the tiles, the interface comprising a recess defined by a beveled surface of at least one of the two tiles; andspray-depositing a spray material over at least a portion of the interface, thereby joining the tiles to form the joined sputtering target,wherein (i) at least a portion of the beveled surface is neither parallel nor perpendicular to a top or bottom surface of at least one of the two tiles, and (ii) at least a portion of the spray material is spray deposited at a first angle (a) approximately perpendicular to the beveled surface and (b) not perpendicular to a top surface of the joined sputtering target. 29. The method of claim 28, wherein spray depositing the spray material comprises: spray depositing a first portion of the spray material at the first angle; andthereafter, spray depositing a second portion of the spray material at a second angle, different from the first angle, that is approximately perpendicular to the top surface of the joined sputtering target.
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