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Reverse optical proximity correction method

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
  • H01L-021/461
출원번호 US-0662842 (2012-10-29)
등록번호 US-8735297 (2014-05-27)
발명자 / 주소
  • Kurjanowicz, Wlodek
출원인 / 주소
  • Sidense Corporation
대리인 / 주소
    Hung, Shin
인용정보 피인용 횟수 : 1  인용 특허 : 193

초록

A method for fabricating an anti-fuse memory cell having a semiconductor structure with a minimized area. The method includes providing a reference pattern for the semiconductor structure, and applying a reverse OPC technique that includes inverting selected corners of the reference pattern. The rev

대표청구항

1. A reverse optical proximity correction (OPC) method, comprising: providing a reference pattern of a semiconductor structure, the reference pattern being rectangular in shape;selecting an area of the reference pattern for area reduction by photolithographic distortion;inverting at least one corner

이 특허에 인용된 특허 (193)

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이 특허를 인용한 특허 (1)

  1. Zhang, Chenming; Chang, HsuSheng; Wei, Fang, Layout pattern modification method.
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