[특허]High temperature position sensor

Hamilton Sundstrand Corporation

검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
검색연산자

검색연산자	기능	검색시 예
()	우선순위가 가장 높은 연산자	예1) (나노 (기계 \| machine))
공백	두 개의 검색어(식)을 모두 포함하고 있는 문서 검색	예1) (나노 기계) 예2) 나노 장영실
\|	두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색	예1) (줄기세포 \| 면역) 예2) 줄기세포 \| 장영실
!	NOT 이후에 있는 검색어가 포함된 문서는 제외	예1) (황금 !백금) 예2) !image
*	검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색	예) semi*
""	따옴표 내의 구문과 완전히 일치하는 문서만 검색	예) "Transform and Quantization"

과학기술 지식인프라 ScienceON

특허 상세정보

MyON담기

내보내기

High temperature position sensor

국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01R-027/08
미국특허분류(USC)	324/691; 324/723
출원번호	US-0152957 (2011-06-03)
등록번호	US-8736285 (2014-05-27)
발명자 / 주소	Stradinger, Jay
출원인 / 주소	Hamilton Sundstrand Corporation
대리인 / 주소	Kinney Lange, P.A.
인용정보	피인용 횟수 : 0 인용 특허 : 10

초록

A position sensor comprises first and second stationary poles with first and second electrodes, and a reference pole positioned therebetween. The reference pole is coupled to a shaft, and includes a semi-metal via that forms a conducting path between the first and second electrodes. The shaft positions the reference pole between the first and second stationary poles, and a resistance of the conducting path varies with a position of the shaft.

대표
청구항
▼

1. A position sensor comprising: a first stationary pole comprising a first electrode;a second stationary pole comprising a second electrode;a reference pole positioned between the first and second stationary poles, the reference pole comprising a semi-metal via, wherein the semi-metal via forms a conducting path between the first and second electrodes; anda shaft coupled to the reference pole, wherein the shaft positions the reference pole between the first and second stationary poles such that a resistance of the conducting path varies with a position of the shaft. 2. The position sensor of claim 1, wherein the semi-metal via conducts current at operating temperatures up to 650° F. (or 343° C.). 3. The position sensor of claim 1, wherein the semi-metal via comprises graphite. 4. The position sensor of claim 1, wherein the reference pole comprises a ceramic matrix and the semi-metal via is embedded in the ceramic matrix. 5. The position sensor of claim 1, wherein the first stationary pole comprises a ceramic matrix and the first electrode comprises graphite embedded in the ceramic matrix. 6. The position sensor of claim 5, wherein a thickness of the first electrode varies along a surface of the first stationary pole, such that the resistance of the conducting path varies with the position of the shaft and the thickness of the first electrode. 7. The position sensor of claim 5, wherein the second electrode is divided into a plurality of sections having different cross sectional areas and separated by insulating materials, such that the resistance of the conducting path varies with the position of the shaft and the different cross-sectional areas of the sections. 8. The position sensor of claim 1, wherein the semi-metal via comprises a first portion in electrical contact with the first electrode, a second portion parallel to the first portion and in electrical contact with the second electrode, and a third portion perpendicular to the first and second portions and forming an electrical connection therebetween. 9. The position sensor of claim 8, wherein the first portion forms an arcuate contact on a first side of the reference pole, the second portion forms an arcuate contact on a second side of the reference pole, and the third portion forms a conducting bridge extending across the reference pole between the first and second arcuate contacts. 10. The position sensor of claim 8, further comprising a biasing element to urge the arcuate contacts into electrical contact with the first and second electrodes. 11. The position sensor of claim 1, wherein the shaft rotates about an axis to position the reference pole at an angle between the first and second stationary poles, such that the resistance of the conducting path varies with a rotational angle of the shaft. 12. The position sensor of claim 1, wherein the shaft translates along an axis to position the reference pole between the first and second stationary poles, such that the resistance of the conducting path varies with an axial location of the shaft. 13. A high-temperature position sensor comprising: a first stationary pole comprising a first electrode;a second stationary pole comprising a second electrode;a reference pole comprising a graphite via, the graphite via comprising a first portion in contact with the first electrode, a second portion in contact with the second electrode, and a third portion connecting the first and second portions to form a conducting path between the first electrode and the second electrode; anda shaft coupled to the reference pole, wherein the shaft positions the reference pole between the first and second stationary poles such that a resistance of the conducting path varies based on a position of the shaft. 14. The high-temperature position sensor of claim 13, wherein the reference pole comprises a ceramic matrix and the graphite via is embedded in the ceramic matrix. 15. The high-temperature position sensor of claim 14, wherein the first and second stationary poles comprise ceramic matrix materials and the first and second electrodes comprise graphite contacts embedded in the ceramic matrix materials. 16. The high-temperature position sensor of claim 14, wherein the shaft positions the reference pole at an axial location between the first and second stationary poles and the resistance of the conducting path varies with the axial location. 17. The high-temperature position sensor of claim 13, wherein the shaft is rotationally coupled to the reference pole and the resistance of the conducting path varies with a rotational angle of the shaft. 18. The high-temperature position sensor of claim 17, wherein the first portion of the graphite via comprises an arcuate contact on a first side of the reference pole and the second portion of the graphite via comprises an arcuate contact on a second side of the reference pole. 19. The position sensor of claim 13, wherein the resistance of the conducting path varies linearly with the position of the shaft. 20. The position sensor of claim 13, wherein a thickness of the first electrode varies along a surface of the first stationary pole, such that the resistance of the conducting path varies non-linearly with the position of the shaft. 21. A method for sensing position, the method comprising: positioning a reference pole between first and second stationary poles with a shaft, the reference pole having a semi-metal via;forming a conducting path along the semi-metal via between a first electrode on the first stationary pole and a second electrode on the second stationary pole;repositioning the reference pole with the shaft, such that a resistance of the conducting path varies based on a position of the shaft; andmeasuring the position of the shaft, based on the resistance. 22. The method of claim 21, further comprising performing the method at an operating temperature of the reference pole up to 650° F. (or 343° C.). 23. The method of claim 21, wherein the reference pole is formed from a ceramic matrix material and the semi-metal via is embedded in the ceramic matrix material. 24. The method of claim 23, wherein the semi-metal via is formed from graphite. 25. The method of claim 21, wherein the semi-metal via comprises: first and second contact portions, the contact portions extending along opposing surfaces of the reference pole; anda bridge portion connecting the contact portions, the bridge portion extending perpendicularly to the contact portions, across the opposing surfaces of the reference pole.

이 특허에 인용된 특허 (10)

IPC 상위 출원인

내보내기

상세정보
내보내기 구분	파일저장 인쇄 메일전송
구성항목	관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	> 총 건의 자료가 검색되었습니다. > 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) > 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. > 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) > 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오 > ~ > Text(ASCII format) Excel format

과학기술 지식인프라 ScienceON

ScienceON Chatbot

특허 상세정보

High temperature position sensor

초록

대표
청구항
▼

이 특허에 인용된 특허 (10)

IPC 상위 출원인

과제정보

상세정보조회

원문조회

IPC 상세정보(version : 201201)

연구과제 성과물(0)

참여연구원의 다른 문헌(0)

처리중입니다.

잠시만 기다려주세요.

ScienceON Chatbot

특허 상세정보

High temperature position sensor

초록

대표청구항 ▼

이 특허에 인용된 특허 (10)

IPC 상위 출원인

과제정보

상세정보조회

원문조회

IPC 상세정보(version : 201201)

연구과제 성과물(0)

참여연구원의 다른 문헌(0)

처리중입니다.

잠시만 기다려주세요.

대표
청구항
▼