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A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gr

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

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1. A method of fabricating a SiC single crystal comprising: (a) sublimation growing a SiC single crystal on a surface of seed crystal in the presence of a temperature gradient; and(b) during step (a), controlling said temperature gradient such that a radial temperature gradient in the crystal is pos

1. A method of fabricating a SiC single crystal comprising: (a) sublimation growing a SiC single crystal on a surface of seed crystal in the presence of a temperature gradient; and(b) during step (a), controlling said temperature gradient such that a radial temperature gradient in the crystal is positive and substantially shallow, and controlling a flux of SiC bearing vapors by substantially restricting said flux to a central area of the surface of the seed crystal. 2. The method of claim 1, wherein the central area of the surface of the seed crystal is between 30% and 60% of a total surface area of the seed crystal substantially around a center of the seed crystal. 3. The method of claim 1, wherein step (b) includes restricting the flux of SiC bearing vapors to the central area of the surface of the seed crystal via a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. 4. The method of claim 3, wherein: the separation plate is spaced between about 25% and 75% of the seed diameter from the seed crystal; andthe separation plate has a thickness between about 4 mm and 10 mm. 5. The method of claim 3, wherein the separation plate is either not reactive to the SiC bearing vapors or includes a coating to avoid contact between the separation plate and the SiC bearing vapors. 6. The method of claim 3, wherein the separation plate includes a first, outer part surrounding a second, inner part that is substantially more permeable to the SiC bearing vapors than the first, outer part. 7. The method of claim 6, wherein: the second, inner part of the separation plate comprises between 20% and 50% of a total area of the separation plate; orthe separation plate is made of graphite, a refractory compound, tantalum carbide, or niobium carbide; ora ratio of mass transport of the SiC bearing vapors through 1 cm2 of area of the inner part of the separation plate versus the mass transport of the SiC bearing vapors through 1 cm2 of area of the outer part of the separation plate is no less that about 50/1. 8. The method of claim 3, wherein the separation plate is configured to substantially remove particles from the flux of the SiC bearing vapors. 9. The method of claim 1, wherein step (a) further includes sublimation growing the SiC single crystal in the presence of at least one of the following: an isotherm that is convex in a direction facing a source of the SiC bearing vapors; and?a radial temperature gradient of no more than about 10 K/cm. 10. The method of claim 9, wherein a difference in thickness between a center of the SiC single crystal and a diameter of the SiC single crystal in a growth direction of the SiC single crystal is no more than about 6 mm. 11. The method of claim 1, further including slicing from the grown SiC single crystal a wafer having one or more of the following: a combined area of stacking faults no more than about 5%, 2%, or 1% of a total area of the wafer; ora lattice curvature of no more than about 0.2°, 0.1°, or 0.06°, over the total area of the wafer; ora full width at half maximum (FWHM) x-ray reflection of no more than about 50, 30, or 20 arc-seconds over the total area of the wafer; ora wafer-average micropipe density (MPD) of no more than about 1/cm2, 0.2/cm2, or 0.1/cm2; ora wafer-average dislocation density of no more than about 10,000 cm−2, 5,000 cm−2, or 1,000 cm−2. 12. The method of claim 1, wherein the grown SiC single crystal has a diameter between about 100 mm and 200 mm. 13. The method of claim 1, further including slicing from the grown SiC single crystal a wafer having one or more of the following: a wafer-average micropipe density no more than about an average of 1/cm; ora percentage of micropipe-free 2×2 mm square dies extracted from the wafer of not less than about 95%; ora percentage of micropipe-free 5×5 mm square dies extracted from the wafer of not less than about 90%; ora wafer-average density of dislocations not more than about 104/cm; ora density of threading screw dislocations of not more than about 1000/cm; ora density of basal plane dislocations of not more than about 300 cm/cm3; orzero density of foreign polytype inclusions; orone or more clouds of carbon inclusions of no more than about 5% of the total wafer area; oredge-to-edge lattice curvature no more that about 0.15°; ora full width at half maximum (FWHM) x-ray reflection of no more than about 25 arc-seconds over the total area of the wafer. 14. A SiC sublimation crystal growth system comprising; a growth crucible configured to be charged with SiC source material and a SiC seed crystal in spaced relation; anda separation plate separating the growth crucible into a source compartment where the SiC source material resides when the growth crucible is charged with the SiC source material and a crystallization compartment where the SiC seed crystal resides when the growth crucible is charged with the SiC seed crystal, wherein:the separation plate includes a first, central part surrounded by a second part that has a lower permeability to SiC bearing vapors originating from the SiC source material during sublimation growth of a SiC crystal on the SiC seed crystal than the first, central part; anda ratio of mass transport of the SiC bearing vapors through the inner part of the separation plate versus mass transport of the SiC bearing vapors through the outer part of the separation plate is no less that about 50/1. 15. The system of claim 14, wherein the separation plate is made from at least one of the following: graphite, a refractory compound, tantalum carbide, or niobium carbide. 16. The system of claim 14, wherein the separation plate is spaced from the SiC seed crystal at a distance between about 20 mm and 70 mm. 17. The system of claim 14, wherein the separation plate includes a coating of tantalum carbide, or niobium carbide, and the coating has a thickness between about 20 microns to 40 microns. 18. The system of claim 14, wherein the first, central part of the separation plate includes passages, each of which has a maximum diameter between about 0.1 mm and 1 mm. 19. A method of forming a high-quality SiC single crystal wafer comprising: sublimation growing on a SiC single crystal seed a SiC single crystal boule having a diameter sufficient for slicing wafers between 100 and 200 mm in diameter, wherein said sublimation growth occurs in the presence of controlled axial and radial temperature gradients and controlled flux of sublimated source material; andslicing from said SiC boule a SiC wafer having: a diameter between 100 and 200 mm inclusive;a lattice curvature of no more than about 0.2°, 0.1°, or 0.06° over the total area of the wafer; anda full width at half maximum (FWHM) of the x-ray reflection of no more than about 50, 30, or 20 arc-seconds over the total area of the wafer. 20. The method of claim 19, wherein the SiC wafer further includes a combined area of stacking faults no more than about 5%, 2%, or 1% of a total area of the wafer. 21. The method of claim 19, wherein the SiC wafer further includes at least one of the following: a wafer-average micropipe density (MPD) of no more than about 1 cm−2, 0.2 cm−2, or 0.1 cm−2; ora wafer-average dislocation density of no more than about 10,000 cm−2, 5,000 cm−2, or 1,000 cm−2. 22. A method of forming a high-quality SiC single crystal wafer comprising: sublimation growing on a SiC single crystal seed a SiC single crystal boule having a diameter sufficient for slicing wafers between 100 and 200 mm in diameter, wherein said sublimation growth occurs in the presence of controlled axial and radial temperature gradients and controlled flux of sublimated source material; andslicing from said SiC boule a SiC wafer having a combined area of stacking faults no more than about 5%, 2%, or 1% of a total area of the wafer. 23. The method of claim 22, wherein the SiC wafer further includes: a lattice curvature of no more than about 0.2°, 0.1°, or 0.06° over the total area of the wafer. 24. The method of claim 22, wherein the SiC wafer further includes a full width at half maximum (FWHM) of the x-ray reflection of no more than about 50, 30, or 20 arc-seconds over the total area of the wafer. 25. The method of claim 22, wherein the SiC wafer further includes at least one of the following: a wafer-average micropipe density (MPD) of no more than about 1 cm−2, 0.2 cm−2, or 0.1 cm−2; ora wafer-average dislocation density of no more than about 10,000 cm−2, 5,000 cm−2, or 1,000 cm−2. 26. A high-quality SiC single crystal wafer having a diameter between 100 and 200 mm and comprising at least one of the following: a lattice curvature of no more than about 0.2°, 0.1°, or 0.06° over the total area of the wafer; ora full width at half maximum (FWHM) of the x-ray reflection of no more than about 50, 30, or 20 arc-seconds over the total area of the wafer; ora combined area of stacking faults no more than about 5%, 2%, or 1% of a total area of the wafer. 27. The SiC single crystal of claim 26, wherein the crystal comprises either a 4H polytype or a 6H polytype.