Microwave plasma apparatus and method for materials processing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05B-006/70
B23K-010/00
출원번호
US-0015842
(2008-01-17)
등록번호
US-8748785
(2014-06-10)
발명자
/ 주소
Jordan, Eric
Cetegen, Baki M.
Hadidi, Kamal
Woskov, Paul
출원인 / 주소
Amastan LLC
대리인 / 주소
McCormick, Paulding & Huber LLP
인용정보
피인용 횟수 :
0인용 특허 :
48
초록▼
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.
대표청구항▼
1. A microwave plasma apparatus for processing a material comprising: a plasma chamber;a microwave radiation source for generating microwave radiation;a waveguide guiding the microwave radiation from the microwave radiation source to the plasma chamber;a supply in fluid communication with the plasma
1. A microwave plasma apparatus for processing a material comprising: a plasma chamber;a microwave radiation source for generating microwave radiation;a waveguide guiding the microwave radiation from the microwave radiation source to the plasma chamber;a supply in fluid communication with the plasma chamber for providing a gas to the plasma chamber, wherein the microwave radiation couples to the gas to form a plasma jet having a substantially laminar flow along an axis; anda material feeding system in communication with the plasma chamber for injecting, substantially parallel to the axis of the substantially laminar flow and into the plasma jet, a stream of solid particles of a process material or droplets of a solution or suspension comprising the process material and a solvent,wherein the process material, through contact with the plasma jet, forms a product material. 2. The apparatus according to claim 1, wherein the gas is a process gas. 3. The apparatus according to claim 2, wherein a portion of the process gas is used as a shrouding gas. 4. The apparatus according to claim 2, further comprising a second supply in fluid communication with the plasma chamber for providing a shrouding gas to the plasma chamber. 5. The apparatus according to claim 4, further comprising a swirl structure that causes the shrouding gas to flow in a laminar and substantially helical swirl between the plasma jet and an inner surface of the plasma chamber. 6. The apparatus according to claim 5, wherein the plasma chamber includes an outlet, and the swirl of the shrouding gas continues past the outlet. 7. The apparatus according to claim 1, wherein the plasma chamber includes an outlet, and the plasma jet extends past the outlet. 8. The apparatus according to claim 1, further comprising an inlet sleeve and an outlet sleeve. 9. The apparatus according to claim 8, configured for modular assembly. 10. The apparatus according to claim 8, further comprising an inlet assembly mounted to the inlet sleeve and in fluid communication with the supply and with the material feeding system. 11. The apparatus according to claim 1, wherein the plasma chamber includes a gas injector that causes the gas to flow laminarly and substantially parallel to an axis of the plasma chamber. 12. The apparatus according to claim 1, wherein the material feeding system suspends the process material in a carrier gas for introduction to the plasma chamber. 13. The apparatus according to claim 12, wherein the material feeding system further comprises: a droplet maker; anda source of the carrier gas,wherein the droplet maker produces droplets containing the process material,wherein the source of the carrier gas is in fluid communication with an inner volume of the plasma chamber via the material feeding system, andwherein a flow of the carrier gas toward the plasma chamber entrains the droplets containing the process material, so that the process material enters the plasma chamber suspended in the carrier gas. 14. The apparatus according to claim 13, wherein the droplet maker is a piezoelectric droplet maker. 15. The apparatus according to claim 12, wherein the process material is suspended in the carrier gas as particulates. 16. The apparatus according to claim 1, wherein the material feeding system comprises: an emitter rod comprising the process material and protruding into the plasma chamber;a gas injector that imparts to the gas a velocity into the chamber and substantially along a surface of the emitter rod; andmeans for advancing the emitter rod into the plasma chamber,wherein the plasma jet comes into contact with at least a portion of the emitter rod,wherein the gas and the plasma jet cooperate to erode at least a part of the portion of the emitter rod, andwherein the emitter rod is advanced into the chamber as the part of the portion of the emitter rod erodes, thereby maintaining at least a portion of the emitter rod in contact with the plasma jet. 17. The apparatus according to claim 1, wherein the plasma chamber includes an outlet, and wherein a target is arranged proximate the outlet so that the product material impacts on the target. 18. The apparatus according to claim 17, wherein the target is a substrate to be coated. 19. A microwave plasma apparatus for processing a material comprising: a plasma chamber;a microwave radiation source generating microwave radiation;a waveguide guiding the microwave radiation from the microwave radiation source to the plasma chamber;a first supply in fluid communication with the plasma chamber for providing a process gas to the plasma chamber, wherein the microwave radiation comes into contact with the process gas to form a plasma jet having a substantially laminar flow along an axis;a second supply in fluid communication with the plasma chamber for providing a shrouding gas to the plasma chamber; anda material feeding system in communication with the plasma chamber for injecting, substantially parallel to the axis of the substantially laminar flow and into the plasma jet, a stream of solid particles of a process material or droplets of a solution or suspension comprising the process material and a solvent,wherein the process material, through contact with the plasma jet, forms a product material.
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