초록 ▼

Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are

Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided.

대표청구항 ▼

1. A light emitting diode comprising: a substrate having a top surface;a light generating layer that is formed on the top surface of the substrate, the light generating layer including a quantum well layer having a compound semiconductor comprising at least one element selected from group II element

1. A light emitting diode comprising: a substrate having a top surface;a light generating layer that is formed on the top surface of the substrate, the light generating layer including a quantum well layer having a compound semiconductor comprising at least one element selected from group II elements and at least one element selected from group VI elements, the compound semiconductor being capable of emitting light in green spectrum, the light generating layer further including a barrier layer formed on at least one side of the quantum well layer, wherein the barrier layer has a composition and lattice constant effective to reduce an internal field formed across the quantum well region by electrical polarization and piezoelectric fields, wherein the light generating layer is capable of emitting light substantially perpendicular to the quantum well through the barrier layer so that the light that is emitted substantially perpendicular to the quantum well is the primary output of the light emitting diode;a first ion-doping region formed laterally adjacent a first side of the light generating layer; anda second ion-doping region formed laterally adjacent a second side of the light generating layer;a first electrode formed on the first ion-doping region; anda second electrode formed on the second ion-doping region;wherein the quantum well layer directly contacts the first and second ion-doping regions so that carriers can be laterally injected from the first and second ion-doping regions to the light generating layer. 2. The light emitting diode according to claim 1, wherein the compound semiconductor has one of binary, ternary or quaternary structures. 3. The light emitting diode according to claim 1, wherein the light in green spectrum has a wavelength ranging from about 499 nm to about 568 nm. 4. The light emitting diode according to claim 1, wherein the group II elements are magnesium, zinc or cadmium and the group VI elements are sulfur or selenium. 5. The light emitting diode according to claim 1, wherein the compound semiconductor is represented by CdSexS1-x,wherein x is 0 to 0.4. 6. The light emitting diode according to claim 1, wherein the compound semiconductor has a hexagonal structure. 7. The light emitting diode according to claim 6, wherein the lattice constant of the hexagonal structure in a-axis is in the range of about 2.5 Å to about 5.5 Å. 8. The light emitting diode according to claim 1, wherein the barrier layer comprises at least one of ZnS, MgZnS, MgCdZnS, ZnO, MgZnO, BeO, BeZnO or MgBeZnO. 9. The light emitting diode according to claim 1, wherein the barrier layer is lattice-matched with the quantum well layer. 10. The light emitting diode according to claim 9, wherein the difference between the lattice constant of the quantum well layer and the barrier layer is not more than about 2.0%. 11. The light emitting diode according to claim 8, wherein the barrier layer comprises a compound represented by MgyCdzZn(1-z-y)Swherein y is 0 to 1, z is 0 to 1. 12. The light emitting diode according to claim 1, wherein the one of the ion-doping regions is an N+doping region and another of the ion-doping regions is a P+doping region. 13. The light emitting diode according to claim 1, wherein the substrate is fabricated from sapphire, spinnel, SiC, Si, ZnO, ZnSe or GaAs. 14. The light emitting diode according to claim 1, further comprising a buffer layer formed between the substrate and the light generating layer. 15. The light emitting diode according to claim 14, wherein the buffer layer comprises ZnS. 16. A light emitting diode module comprising: a circuit board;a light emitting diode mounted on the circuit board comprising: a substrate having a top surface;a light generating layer that is formed on the top surface of the substrate, the light generating layer including a quantum well layer having a compound semiconductor comprising at least one element selected from group II elements and at least one element selected from group VI elements, the compound semiconductor being capable of emitting light in green spectrum, the light generating layer further including a barrier layer formed on at least one side of the quantum well layer, wherein the barrier layer has a composition and lattice constant effective to reduce an internal field formed across the quantum well region by electrical polarization and piezoelectric fields, wherein the light generating layer is capable of emitting light substantially perpendicular to the quantum well through the barrier layer as the primary light output of the light emitting diode module;a first ion-doping region formed laterally adjacent a first side of the light generating layer;a second ion-doping region formed laterally adjacent a second side of the light generating layer;a first electrode formed on the first ion-doping region; anda second electrode formed on the second ion-doping region; wherein the quantum well layer directly contacts the first and second ion-doping regions so that carriers can be laterally injected from the first and second ion-doping regions to the light generating layer; anda light emitting portion configured to emit light in blue or red spectrums and be mounted on the circuit board. 17. The light emitting diode module according to claim 16, wherein the light emitting portion is a light emitting diode or a phosphor. 18. A light emitting diode comprising: a substrate having a top surface;a light generating layer formed on the top surface of the substrate, the light generating layer having a bottom side adjacent the top surface of the substrate, a top side that is opposite the bottom side through which light is emitted, a first lateral side extending from the bottom side of the light generating layer to the top side of the light generating layer, and a second lateral side that is opposite the first lateral side extending from the bottom side of the light generating layer to the top side of the light generating layer, the light generating layer including a quantum well layer having a compound semiconductor comprising at least one element selected from group II elements and at least one element selected from group VI elements, the compound semiconductor being capable of emitting light in green spectrum, the light generating layer further including a barrier layer formed on at least one side of the quantum well layer, wherein the barrier layer has a composition and lattice constant effective to reduce an internal field formed across the quantum well region by electrical polarization and piezoelectric fields, wherein the light generating layer is capable of emitting light substantially perpendicular to the quantum well through the top side as the primary light output of the light emitting diode;a first ion-doping region formed along the first lateral side of the light generating layer such that the fist ion-doping region extends from the bottom side of the light generating layer to the top side of the light generating layer where light is emitted; anda second ion-doping region formed along the second lateral side of the light generating layer such that the second ion-doping region extends from the bottom side of the light generating layer to the top side of the light generating layer where light is emitted,wherein the quantum well layer directly contacts the first and second ion-doping regions. 19. The light emitting diode according to claim 1, wherein the first ion-doping region is on a right side of the light generating layer and the second ion-doping region is on a left side of the light generating layer.