Monolithic three-dimensional semiconductor device and structure
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/40
H01L-023/544
H01L-027/02
H01L-027/115
H01L-027/12
H01L-029/66
H01L-021/822
H01L-027/108
H01L-027/112
H01L-027/11
H01L-027/105
H01L-027/06
H01L-027/118
H01L-021/762
H01L-021/84
H01L-023/48
H01L-029/78
출원번호
US-0949617
(2010-11-18)
등록번호
US-8754533
(2014-06-17)
발명자
/ 주소
Or-Bach, Zvi
Cronquist, Brian
Beinglass, Israel
de Jong, Jan Lodewijk
Sekar, Deepak C.
출원인 / 주소
Monolithic 3D Inc.
대리인 / 주소
Tran & Associates
인용정보
피인용 횟수 :
21인용 특허 :
327
초록▼
A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, t
A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
대표청구항▼
1. A semiconductor device comprising: a first monocrystalline layer comprising first transistors and first alignment marks, anda first metal layer forming at least a portion of connections between said first transistors; anda second layer comprising second transistors, said second transistors consis
1. A semiconductor device comprising: a first monocrystalline layer comprising first transistors and first alignment marks, anda first metal layer forming at least a portion of connections between said first transistors; anda second layer comprising second transistors, said second transistors consisting essentially of monocrystalline material, said second layer overlying said first metal layer, wherein said first metal layer comprises aluminum or copper,wherein said second layer is less than 1 micron in thickness and the first alignment marks are detectable through the second layer and the second layer comprises logic cells, andwherein said second transistors are aligned to at least one of said first alignment marks with less than 40 nm alignment error. 2. A semiconductor device according to claim 1, wherein at least one of said second transistors is a FinFET transistor. 3. A semiconductor device according to claim 1, further comprising: a heat spreader layer between said first monocrystalline layer and said second layer. 4. A semiconductor device according to claim 1, wherein said logic cells are testable through the use of a scan-chain. 5. A semiconductor device according to claim 1, further comprising: a power grid to deliver power to said logic cells wherein said device comprises a heat removal path from said power grid. 6. A semiconductor device according to claim 1, further comprising: a heat sink; anda heat removal path from said second layer to said heat sink. 7. A semiconductor device according to claim 1 wherein said logic cells comprise at least one of the following: i) a NAND logic gate;ii) a NOR logic gate; oriii) a Flip-Flop cell. 8. A semiconductor device according to claim 1 wherein said monocrystalline material of said second layer has a different crystal than a monocrystalline material of said first monocrystalline layer. 9. A mobile system comprising the semiconductor device according to claim 1. 10. A semiconductor device comprising: a first monocrystalline layer comprising:first transistors, first alignment marks, and a first metal layer forming at least a portion of connections between said first transistors, anda second layer comprising second transistors, said second transistors consisting essentially of monocrystalline material, said second layer overlying said first metal layer,wherein said first metal layer comprises aluminum or copper,wherein said second layer is less than 1 micron in thickness and the first alignment marks are detectable through the second layer,wherein said second transistors are aligned to at least one of said first alignment marks with less than 40 nm alignment error, andwherein said second transistors comprise N type transistors and P type transistors. 11. A semiconductor device according to claim 10 wherein at least one of said second transistors is a FinFET transistor. 12. A semiconductor device according to claim 10, further comprising: a power grid to deliver power to said logic cells wherein said device comprises a heat removal path from said power grid. 13. A semiconductor device according to claim 10, further comprising: a heat spreader layer between said first monocrystalline layer and said second layer. 14. A mobile system comprising the semiconductor device according to claim 10. 15. A semiconductor device according to claim 10 wherein the mono-crystalline material of said second layer has a different crystal than a monocrystalline material of said first layer. 16. A semiconductor device according to claim 10 wherein at least some of said second transistors form logic cells wherein said logic cells comprise at least one of the following: i) a NAND logic gate;ii) a NOR logic gate; oriii) a Flip-Flop cell. 17. A semiconductor device according to claim 10 wherein at least some of said second transistors form logic cells, and wherein said logic cells are testable through the use of a scan-chain. 18. A semiconductor device according to claim 10, further comprising: a heat sink; anda heat removal path from said second layer to said heat sink. 19. A semiconductor device comprising: a first monocrystalline layer comprising first transistors and first alignment marks, anda first metal layer forming at least a portion of connections between said first transistors; anda second layer comprising second transistors, said second transistors consisting essentially of monocrystalline material, said second layer overlying said first metal layer, wherein said first metal layer comprises aluminum or copper,wherein said second layer is less than 1 micron in thickness and the first alignment marks are detectable through the second layer and the second layer comprises logic cells, andwherein said second transistors are aligned to at least one of said first alignment marks with less than 40 nm alignment error, andwherein said logic cells comprise a flip-flop logic cell. 20. A semiconductor device according to claim 19 wherein at least one of said second transistors is a fully depleted transistor.
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