Light-emitting device and electronic device using the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-001/62
H01J-063/04
출원번호
US-0499271
(2009-07-08)
등록번호
US-8760046
(2014-06-24)
우선권정보
JP-2008-180229 (2008-07-10)
발명자
/ 주소
Seo, Satoshi
Hatano, Kaoru
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
9인용 특허 :
70
초록▼
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive inter
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
대표청구항▼
1. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of: forming an element formation layer over a first substrate, wherein the element formation layer is formed by a method comprising the steps of: forming a thin film transistor over the first substrat
1. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of: forming an element formation layer over a first substrate, wherein the element formation layer is formed by a method comprising the steps of: forming a thin film transistor over the first substrate;forming a first insulating film over the thin film transistor;forming a color filter over the first insulating film;forming an interlayer insulating film over the color filter; andforming a first electrode having light-transmitting ability over the interlayer insulating film, wherein the first electrode is electrically connected to the thin film transistor;bonding the element formation layer with a second substrate, allowing the element formation layer to be sandwiched between the first substrate and the second substrate;separating the first substrate from the element formation layer;bonding the element formation layer with a third substrate, allowing the element formation layer to be sandwiched between the second substrate and the third substrate;separating the second substrate from the element formation layer;forming an EL layer over the first electrode; andforming a second electrode over the EL layer,wherein the third substrate is a plastic substrate having light-transmitting ability. 2. The manufacturing method according to claim 1, wherein the plastic substrate is an organic resin. 3. The manufacturing method according to claim 1, wherein the plastic substrate comprises a fibrous body and an organic resin. 4. The manufacturing method according to claim 1, wherein the first substrate is selected from a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, and a metal substrate having an insulating surface. 5. The manufacturing method according to claim 1, further comprising the step of sealing the element formation layer. 6. The manufacturing method according to claim 1, wherein the EL layer emits light with white color. 7. The manufacturing method according to claim 1, further comprising the step of forming a separation layer over the first substrate over which the element formation layer is formed. 8. The manufacturing method according to claim 1, wherein the formation of the EL layer is performed after separating the second substrate from the element formation layer and the third substrate. 9. The manufacturing method according to claim 1, wherein the method for forming the element formation layer further comprises a step of forming a second insulating film over the color filter over which the interlayer insulating film is formed. 10. The manufacturing method according to claim 1, wherein the method for forming the element formation layer further comprises a step of forming a second insulating film over the color filter over which the interlayer insulating film is formed,wherein the first insulating film and the second insulating film each are in contact with the color filter, andwherein the first insulating film and the second insulating film are in contact with each other in a region where the thin film transistor is formed. 11. A manufacturing method of a light-emitting device, the manufacturing method comprising the steps of: forming a color filter over a first substrate;forming a first insulating layer over the first substrate;forming an element formation layer over the first insulating layer, wherein the element formation layer is formed by a method comprising the steps of: forming a thin film transistor over the first insulating layer;forming an interlayer insulating film over the thin film transistor;forming a first electrode having light-transmitting ability over the interlayer insulating film, wherein the first electrode is electrically connected to the thin film transistor;bonding the element formation layer with a second substrate, allowing the element formation layer to be sandwiched between the first substrate and the second substrate;separating the first substrate from the color filter;bonding the element formation layer with a third substrate, allowing the color filter, the first insulating layer, and the element formation layer to be sandwiched between the second substrate and the third substrate;separating the second substrate from the element formation layer;forming an EL layer over the first electrode; andforming a second electrode over the EL layer,wherein the third substrate is a plastic substrate having light-transmitting ability. 12. The manufacturing method according to claim 11, wherein the plastic substrate is an organic resin. 13. The manufacturing method according to claim 11, wherein the plastic substrate comprises a fibrous body and an organic resin. 14. The manufacturing method according to claim 11, wherein the first substrate is selected from a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, and a metal substrate having an insulating surface. 15. The manufacturing method according to claim 11, further comprising the step of sealing the element formation layer. 16. The manufacturing method according to claim 11, wherein the EL layer emits light with white color. 17. The manufacturing method according to claim 11, further comprising the step of forming a separation layer between the first substrate and the color filter. 18. The manufacturing method according to claim 11, wherein the formation of the EL layer is performed after separating the second substrate from the element formation layer and the third substrate. 19. A light-emitting device comprising: a flexible substrate having light-transmitting ability;a thin film transistor over the flexible substrate with an adhesive provided therebetween;a first insulating film over the thin film transistor;a color filter over the first insulating film;a light-emitting element over the color filter and comprising: a first electrode having light-transmitting ability and being electrically connected to the thin film transistor;an EL layer over the first electrode; anda second electrode over the EL layer; anda protective film over the light-emitting element,wherein the thin film transistor is overlapped with the color filter, andwherein the thin film transistor comprises an oxide semiconductor layer. 20. The light-emitting device according to claim 19, wherein the flexible substrate comprises an organic resin. 21. The light-emitting device according to claim 19, wherein the flexible substrate comprises a fibrous body and an organic resin. 22. The light-emitting device according to claim 19, further comprising a second insulating film over and being in contact with the color filter, wherein the color filter is in contact with the first insulating film. 23. The light-emitting device according to claim 19, wherein the EL layer emits light with white color. 24. The light-emitting device according to claim 19, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen. 25. A light-emitting device comprising: a flexible substrate having light-transmitting ability;a color filter over the flexible substrate with an adhesive provided therebetween;a first insulating film over the color filter;a thin film transistor over the first insulating film;an interlayer insulating film over the thin film transistor;a light-emitting element over the color filter and comprising: a first electrode having light-transmitting ability;an EL layer over the first electrode; anda second electrode over the EL layer; anda protective film over the light-emitting element,wherein the thin film transistor comprises an oxide semiconductor layer, andwherein the color filter is positioned between the flexible substrate and the thin film transistor. 26. The light-emitting device according to claim 25, wherein the flexible substrate comprises an organic resin. 27. The light-emitting device according to claim 25, wherein the flexible substrate comprises a fibrous body and an organic resin. 28. The light-emitting device according to claim 25, wherein the EL layer emits light with white color. 29. The light-emitting device according to claim 25, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen. 30. A light-emitting device comprising: a substrate having light-transmitting ability;a transistor over the substrate;a color filter over the transistor;a light-emitting element over the color filter and comprising: a first electrode having light-transmitting ability and being electrically connected to the transistor;an EL layer over the first electrode; anda second electrode over the EL layer; anda protective film over the light-emitting element,wherein the transistor is overlapped with the color filter, andwherein the transistor comprises a semiconductor layer including indium, gallium, zinc, and oxygen. 31. The light-emitting device according to claim 30, wherein the substrate comprises an organic resin. 32. The light-emitting device according to claim 30, wherein the substrate comprises a fibrous body and an organic resin. 33. The light-emitting device according to claim 30, further comprising an insulating film over and being in contact with the color filter. 34. The light-emitting device according to claim 30, wherein the EL layer emits light with white color. 35. The light-emitting device according to claim 30, wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate. 36. A light-emitting device comprising: a substrate having light-transmitting ability;a transistor over the substrate;a color filter over the transistor;a light-emitting element over the color filter and comprising: a first electrode having light-transmitting ability and being electrically connected to the transistor;an EL layer over the first electrode; anda second electrode over the EL layer; anda protective film over the light-emitting element,wherein the transistor is overlapped with the color filter, andwherein the transistor comprises an oxide semiconductor layer. 37. The light-emitting device according to claim 36, wherein the substrate comprises an organic resin. 38. The light-emitting device according to claim 36, further comprising an insulating film over and being in contact with the color filter. 39. The light-emitting device according to claim 36, wherein the EL layer emits light with white color. 40. The light-emitting device according to claim 36, wherein the light-emitting device is configured to emit light from the light-emitting element through the substrate.
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