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Method for manufacturing semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/762
출원번호 US-0246577 (2008-10-07)
등록번호 US-8772128 (2014-07-08)
우선권정보 JP-2007-264912 (2007-10-10); JP-2007-267265 (2007-10-12); JP-2007-285598 (2007-11-01)
발명자 / 주소
  • Yamazaki, Shunpei
  • Momo, Junpei
  • Isaka, Fumito
  • Higa, Eiji
  • Koyama, Masaki
  • Shimomura, Akihisa
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.
인용정보 피인용 횟수 : 8  인용 특허 : 64

초록

A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supportin

대표청구항

1. A method for manufacturing a semiconductor device, comprising the steps of: irradiating a single crystal semiconductor substrate with ions that are accelerated with an ion doping apparatus to form a damaged region in a region at a predetermined depth from a surface of the single crystal semicondu

이 특허에 인용된 특허 (64)

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  2. Kawachi,Genshiro; Sato,Toshihiro; Nishitani,Shigeyuki; Tokuda,Naoki, Display device.
  3. Kawachi, Genshiro; Sato, Toshihiro; Nishitani, Shigeyuki; Tokuda, Naoki, Display device with improved drive arrangement.
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  5. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  6. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  7. Yamazaki,Shunpei; Koyama,Jun; Hirakata,Yoshiharu; Fukunaga,Takeshi, Electrooptical device.
  8. Levy, Max; Martin, Dale; Pfeiffer, Gerd; Slinkman, James A., High resistivity SOI base wafer using thermally annealed substrate.
  9. Ito, Hiroyuki, Ion implantation method and method for manufacturing SOI wafer.
  10. Ito,Hiroyuki; Matsunaga,Yasuhiko, Ion implantation method, SOI wafer manufacturing method and ion implantation system.
  11. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiating apparatus and method of manufacturing semiconductor apparatus.
  12. Honda, Tatsuya, Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device.
  13. Yamazaki, Shunpei; Furuno, Makoto, Manufacturing method of substrate provided with semiconductor films.
  14. Yamanaka, Hideo, Method and apparatus for producing ultra-thin semiconductor chip and method and apparatus for producing ultra-thin back-illuminated solid-state image pickup device.
  15. Henley, Francois J., Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process.
  16. Orita Kenji,JPX ; Ishida Masahiro,JPX ; Nakamura Shinji,JPX ; Yuri Masaaki,JPX, Method for fabricating semiconductor device having group III nitride.
  17. Arao, Tatsuya; Yamazaki, Shunpei, Method for fabricating semiconductor film and semiconductor device and laser processing apparatus.
  18. Arao,Tatsuya; Yamazaki,Shunpei, Method for fabricating semiconductor film and semiconductor device and laser processing apparatus.
  19. Usenko,Alexander Yuri, Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers.
  20. Shimomura, Akihisa; Tsukamoto, Naoki, Method for manufacturing a semiconductor substrate by laser irradiation.
  21. Yamazaki, Shunpei, Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device.
  22. Yamazaki, Shunpei, Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device.
  23. Tsujimura, Ayumu; Hasegawa, Yoshiaki; Ishibashi, Akihiko; Kidoguchi, Isao; Ban, Yuzaburo, Method for producing semiconductor and semiconductor laser device.
  24. Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
  25. Katada Mitsutaka (Kariya JPX) Tsuruta Kazuhiro (Oobu JPX) Fujino Seiji (Toyota JPX) Onoda Michitoshi (Toyohashi JPX), Method of bonding semiconductor substrates.
  26. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  27. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  28. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  30. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
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  32. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  33. Yamazaki,Shunpei; Tanaka,Koichiro, Method of flattening a crystallized semiconductor film surface by using a plate.
  34. Yamazaki, Shunpei; Higa, Eiji; Nagano, Yoji; Mizoi, Tatsuya; Shimomura, Akihisa, Method of manufacturing SOI substrate.
  35. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
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  39. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.
  40. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus.
  41. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device by irradiating with a laser beam.
  42. Wong,William S.; Lu,Jeng Ping; Street,Robert A., Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates.
  43. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
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  45. Seguchi Youhei,JPX ; Tokushige Nobuaki,JPX, Process for fabricating SOI substrate with high-efficiency recovery from damage due to Ion implantation.
  46. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
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  51. Bruel,Michel, Process for the production of thin semiconductor material films.
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  55. Yasukawa,Masahiro, SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and .
  56. Takafuji,Yutaka; Itoga,Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
  57. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Semiconductor device having an SOI structure and manufacturing method therefor.
  58. Couillard, James Gregory; Lehuede, Philippe; Vallon, Sophie A, Semiconductor on insulator structure made using radiation annealing.
  59. Yamazaki, Shunpei; Ichijo, Mitsuhiro; Furuno, Makoto; Ohtsuki, Takashi; Okazaki, Kenichi; Tanaka, Tetsuhiro; Yasumoto, Seiji, Semiconductor substrate and manufacturing method of semiconductor device.
  60. Kakehata, Tetsuya, Semiconductor substrate and method for manufacturing the same.
  61. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
  62. Morita, Etsurou; Sano, Ritarou; Endo, Akihiko, Silicon-on insulator substrate and method for manufacturing the same.
  63. Maa,Jer shen; Lee,Jong Jan; Tweet,Douglas J.; Evans,David R.; Burmaster,Allen W.; Hsu,Sheng Teng, Strained silicon on insulator from film transfer and relaxation by hydrogen implantation.
  64. Maa,Jer shen; Lee,Jong Jan; Tweet,Douglas J.; Evans,David R.; Burmaster,Allen W.; Hsu,Sheng Teng, Strained silicon on insulator from film transfer and relaxation by hydrogen implantation.

이 특허를 인용한 특허 (8)

  1. Sakata, Junichiro; Sasaki, Toshinari; Hosoba, Miyuki, Display device including transistor and manufacturing method thereof.
  2. Sakata, Junichiro; Sasaki, Toshinari; Hosoba, Miyuki, Display device including transistor and manufacturing method thereof.
  3. Sakata, Junichiro; Sasaki, Toshinari; Hosoba, Miyuki, Display device including transistor and manufacturing method thereof.
  4. Yamazaki, Shunpei, Electronic device, manufacturing method of electronic device, and sputtering target.
  5. Yamazaki, Shunpei, Electronic device, manufacturing method of electronic device, and sputtering target.
  6. Hening, Alexandru; Wayne, David T.; Lovern, Michael G., Laser-induced plasma filaments for communication.
  7. Falster, Robert J.; Voronkov, Vladimir V.; Pitney, John A.; Albrecht, Peter D., Processes and apparatus for preparing heterostructures with reduced strain by radial compression.
  8. Falster, Robert J.; Voronkov, Vladimir V.; Pitney, John A.; Albrecht, Peter D., Processes and apparatus for preparing heterostructures with reduced strain by radial distension.
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