IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0954812
(2007-12-12)
|
등록번호 |
US-8772933
(2014-07-08)
|
발명자
/ 주소 |
- Ou, Ya
- Ponoth, Shom
- Spooner, Terry A.
|
출원인 / 주소 |
- International Business Machines Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
6 |
초록
▼
An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. Th
An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.
대표청구항
▼
1. A structure, comprising: a lower dielectric layer having a lower trench filled with a lower conductive layer;a lower cap layer formed on the lower dielectric layer;a planarized dielectric layer, formed on the lower cap layer, having an upper trench;an upper conductive layer formed in the upper tr
1. A structure, comprising: a lower dielectric layer having a lower trench filled with a lower conductive layer;a lower cap layer formed on the lower dielectric layer;a planarized dielectric layer, formed on the lower cap layer, having an upper trench;an upper conductive layer formed in the upper trench of the planarized dielectric layer, a top surface of the upper conductive layer being at a coplanar level as a top surface of the planarized dielectric layer;a via aligned with the lower trench and structured to connect the upper trench with the lower trench, the via being formed through the planarized dielectric is layer and the lower cap layer into the lower conductive layer;a liner completely lining sidewalls and a bottom of the upper trench and the via, wherein the liner extends through the lower cap layer into and in physical contact with the lower conductive layer, and a bottom surface of a bottom portion of the liner is non-planar and below a top surface of the lower dielectric layer;a sacrificial layer formed selective to an exposed surface of the planarized dielectric layer;a cap layer being formed on the conductive layer to prevent migration, the planarized dielectric layer being devoid of the cap layer, and the cap layer being in physical contact with the upper conductive layer; anda plurality of isolated deposits of a nucleated cap material formed on the sacrificial material,wherein the nucleated cap material comprises a same material as the cap layer. 2. The structure of claim 1, wherein the cap layer is one of CoWB and CoWP of different compositions. 3. The structure of claim 1, wherein the liner extends below portions of the lower conductive layer within the upper trench. 4. The structure o f claim 3, wherein the liner is tantalum, tantalum nitride, titanium, titanium nitride or Ruthenium. 5. The structure of claim 1, wherein the planarized dielectric layer is silicon oxide, carbon doped oxide, SiCxOyHz or a porous dielectric material. 6. The structure of claim 1, wherein the upper conductive layer is free of the sacrificial layer. 7. The structure of claim 1, wherein the sacrificial layer has a ratio of deposition rate on the planarized dielectric layer to a deposition rate on copper of about 2 or greater. 8. The structure of claim 1, wherein the sacrificial layer is hydrophobic. 9. The structure of claim 1, wherein the sacrificial layer is a variety of silylating agents. 10. The structure of claim 1, wherein the sacrificial layer is a variety of polyxylylene polymers. 11. The structure of claim 1, wherein the sacrificial layer prevents unwanted deposition and/or rogue nucleation of the cap layer, on the planarized dielectric layer. 12. An intermediate structure, comprising: a first dielectric layer having a first trench filled with a first conductive layer;a lower capping layer formed on the first dielectric layer;a second dielectric layer formed over the first dielectric layer, the second dielectric layer having a via and a second trench, wherein the via and the second trench are lined with a liner and filled with a second conductive layer on the liner, a top surface of the second conductive layer being at a coplanar level as a top surface of the second dielectric layer, the second dielectric layer being devoid of unwanted deposition or nucleation of a capping layer, and the capping layer being on the second conductive layer, wherein: the liner contacts the first dielectric layer and the first conductive layer;a bottom portion of the liner extends through the lower capping layer into the first conductive layer; anda bottom surface of the bottom portion of the liner is non-planar and below a top surface of the first dielectric layer;a sacrificial layer placed on an entire exposed surface of the second dielectric layer, which prevents the capping layer from depositing on the second dielectric layer, the capping layer being devoid of the sacrificial layer; anda plurality of isolated deposits of a nucleated cap material formed on the sacrificial material,wherein the nucleated cap material comprises a same material as the cap layer. 13. The intermediate structure of claim 12, wherein the liner is tantalum, tantalum nitride, titanium, titanium nitride or Ruthenium. 14. The intermediate structure of claim 12, wherein the first conductive layer and the second conductive layer are copper. 15. The intermediate structure of claim 12, wherein the sacrificial layer has a ratio of deposition rate on the second dielectric layer to a deposition rate on the second conductive layer of about 2 or greater. 16. The intermediate structure of claim 12, wherein the sacrificial layer is at least one of: hydrophobic and has silylating agents, and a variety of polyxylylene polymers. 17. The intermediate structure of claim 12, wherein the sacrificial layer prevents unwanted deposition and/or rogue nucleation of the capping layer, on the second dielectric layer. 18. The intermediate structure of claim 12, wherein: the capping layer is one of CoWB and CoWP of different compositions; andthe capping layer is in physical contact with the second conductive layer. 19. The intermediate structure of claim 18, wherein the capping layer is in physical contact with only the second conductive layer. 20. The intermediate structure of claim 19, further comprising: the second dielectric layer formed on the lower capping layer, wherein: the via aligns with the first trench and connects with the second trench, extends from the second dielectric layer through the lower capping layer and into the first trench;the liner extends below portions of the second conductive layer within the via and the second trench; andthe second conductive layer extends through the lower capping layer and into the first trench. 21. The structure of claim 1, further comprising a second via aligned with a second lower trench in the lower dielectric layer, and connected to the upper trench, and formed through the planarized dielectric layer and the lower cap layer and into the second lower trench, wherein: the liner lines sidewalls and a bottom of the second via; andthe upper conductive layer fills the second via. 22. The structure of claim 21, wherein the upper trench, the via, and the second via comprise a continuous feature. 23. The intermediate structure of claim 20, further comprising a second via formed through the second dielectric layer and the lower capping layer and into the first conductive layer, wherein: the liner lines sidewalls and a bottom of the second via; andthe second conductive layer fills the second via. 24. The intermediate structure of claim 23, wherein the second trench, the via, and the second via comprise a continuous feature. 25. A structure, comprising: a first dielectric layer;an intermediate cap layer formed on the first dielectric layer;a second dielectric layer formed over the first dielectric layer;a conductive layer formed in a trench of the second dielectric layer, a top surface of the conductive layer being at a coplanar level as a top surface of the second dielectric layer;a liner completely lining sidewalls and a bottom of the trench, and in direct contact with the second dielectric layer, wherein: the liner contacts a lower conductive layer within a trench formed in the first dielectric layer;a bottom portion of the liner extends through the intermediate cap layer into the lower conductive layer; anda bottom surface of the bottom portion of the liner is non-planar and below a top surface of the first dielectric layer;a sacrificial layer formed on an exposed surface of the second dielectric layer;a cap layer being formed on the conductive layer to prevent migration, the second dielectric layer being devoid of the cap layer; anda nucleated cap material of a same material as the cap layer being formed on the sacrificial layer, wherein: the sacrificial layer prevents the cap layer from being depositing on the second dielectric layer; andthe nucleated cap material provides an un-continuous coverage of an entire surface of the sacrificial layer. 26. The structure of claim 25, wherein the top surface of the second dielectric layer is devoid of the liner. 27. The structure of claim 26, wherein a top surface of the liner is coplanar with the top surface of the conductive layer and the top surface of the second dielectric layer.
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