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A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaf

A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.

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1. A chemical vapor deposition reactor comprising: a central axis of symmetry;a flow flange assembly having a top and a bottom located opposite to the top of the flow flange assembly, wherein the flow flange assembly comprises a main flange body and an upper flow guide comprising an adjacent wall, h

1. A chemical vapor deposition reactor comprising: a central axis of symmetry;a flow flange assembly having a top and a bottom located opposite to the top of the flow flange assembly, wherein the flow flange assembly comprises a main flange body and an upper flow guide comprising an adjacent wall, having an interior surface and an exterior surface located opposite to the interior surface, connected to the main flange body and located between the main flange body and a reaction chamber volume, wherein a first gap is formed between the interior surface of the adjacent wall of the upper flow guide and the main flange body of the flow flange assembly, wherein the flow flange assembly has (a) a bottom end interior surface with a normal line that is parallel to the central axis of symmetry and (b) a top end interior surface with a normal line that is perpendicular to the central axis of symmetry;a flow injector connected to the top of the flow flange assembly; anda wafer carrier located adjacent to the bottom of the flow flange assembly, wherein the exterior surface of the adjacent wall has a top end and a bottom end located opposite to the top end, wherein the top end of the exterior surface has a diameter that is less than a diameter of the bottom end of the exterior surface,wherein the central axis of symmetry traverses the flow flange assembly, the flow injector and the wafer carrier,wherein a second gap is provided between the exterior surface of the adjacent wall of the upper flow guide at an outermost diameter of the upper flow guide and an upper surface of the wafer carrier at an outermost diameter of the wafer carrier, wherein the second gap is at a minimum value compared to values for all other vertical separations between the exterior surface of the adjacent wall and the upper surface of the wafer carrier,and further wherein the first gap contacts the interior surface of the adjacent wall and extends along the interior surface of the adjacent wall from an innermost diameter of the upper flow guide to an outermost diameter of the upper flow guide. 2. The chemical vapor deposition reactor of claim 1 wherein the first gap has a thickness of about 0.1 inches or less. 3. The chemical vapor deposition reactor of claim 1, wherein the main flange body comprises a first channel in fluid communication with the first gap at the bottom/outer portion of the first gap and a second channel in fluid communication with the first gap at the top/inner portion of the first gap, wherein fluid is flowable from one channel to another channel, thereby effecting temperature control of the exterior surface of the upper flow guide. 4. The chemical vapor deposition reactor of claim 3 wherein the fluid is flowable in a reverse direction through the first gap with respect to a direction that the gas is flowable in a reactor chamber volume. 5. The chemical vapor deposition reactor of claim 1, wherein the adjacent wall of the upper flow guide has an upper diameter substantially equal to a diameter of the flow injector and a lower diameter substantially equal to a diameter of the wafer carrier, wherein the upper diameter of the adjacent wall of the upper flow guide is smaller than the lower diameter of the adjacent wall of the upper flow guide. 6. The chemical vapor deposition reactor of claim 1, wherein the flow injector is connected to a mating port on the flow flange assembly, wherein the flow injector comprises one or more supply tubes, one or more gas chambers receiving inlet gas streams from the supply tubes, a fluid cavity below the gas chambers, and one or more outlet conduits exiting the gas chambers and penetrating through the fluid cavity. 7. The chemical vapor deposition reactor of claim 1, wherein the flow injector is configured to keep one or more gas streams separated prior to exit, and wherein the flow flange assembly is configured to regulate the temperature of the gases as the gases exit the flow flange assembly. 8. The chemical vapor deposition reactor of claim 1 further comprising a chamber assembly connected to the flow flange assembly wherein the chamber assembly comprises a heating assembly located below the wafer carrier and a lower flow guide surrounding the wafer carrier. 9. The chemical vapor deposition reactor of claim 1, wherein the minimum value for the second gap is about one inch or less. 10. The chemical vapor deposition reactor of claim 1, wherein the curved cross-sectional profile of the exterior surface of the upper flow guide is continuously curvilinear from the top end of the exterior surface of the adjacent wall of the upper flow guide to the bottom end of the exterior surface of the adjacent wall of the upper flow guide. 11. A chemical vapor deposition reactor comprising: a central axis of symmetry;a flow flange assembly having a top and a bottom located opposite to the top of flow flange assembly, wherein the flow flange assembly comprises a main flange body and an upper flow guide comprising an adjacent wall, having an interior surface and an exterior surface located adjacent to the interior surface, connected to the main flange body and located between the main flange body and a reaction chamber volume, wherein a first gap is formed between the interior surface of the adjacent wall of the upper flow guide and the main flange body of the flow flange assembly, wherein the flow flange assembly has (a) a bottom end interior surface with a normal line that is parallel to the central axis of symmetry and (b) a top end interior surface with a normal line that is perpendicular to the central axis of symmetry;a flow injector connected to the top of the flow flange assembly; anda wafer carrier located adjacent to the bottom of the flow flange assembly,wherein the central axis of symmetry traverses the flow flange assembly, the flow injector and the wafer carrier,wherein the upper flow guide has an entire length defined between a top end and a bottom end located opposite to the top end;wherein the first gap contacts the interior surface of the adjacent wall, corresponds to the curved cross-sectional profile of exterior surface of the upper flow guide and extends the entire length of the upper flow guide,wherein a second gap is provided between the exterior surface of the upper flow guide at an outermost diameter of the upper flow guide and an upper surface of the wafer carrier at an outermost diameter of the wafer carrier, wherein the second gap is at a minimum value compared to values for all other vertical separations between the exterior surface of the upper flow guide and the upper surface of the wafer carrier. 12. A chemical vapor deposition reactor comprising: a central axis of symmetry;a flow flange assembly having a top and a bottom located opposite to the top of flow flange assembly, wherein the flow flange assembly comprises a main flange body and an upper flow guide comprising an adjacent wall, having an interior surface and an exterior surface located opposite to the interior surface, connected to the main flange body and located between the main flange body and a reaction chamber volume, wherein a first gap, having a thickness of about 0.1 inches or less, is formed between the interior surface of the adjacent wall of the upper flow guide and the main flange body of the flow flange assembly, wherein the first gap contacts and extends along the interior surface of the adjacent wall, wherein the flow flange assembly has (a) a bottom end interior surface with a normal line that is parallel to the central axis of symmetry and (b) a top end interior surface with a normal line that is perpendicular to the central axis of symmetry;a flow injector connected to the top of the flow flange assembly; anda wafer carrier located adjacent to the bottom of the flow flange assembly,wherein the central axis of symmetry traverses the flow flange assembly, the flow injector and the wafer carrierwherein a second gap is provided between the exterior surface of the adjacent wall of the upper flow guide at an outermost diameter of the upper flow guide and an upper surface of the wafer carrier at an outermost diameter of the wafer carrier, wherein the second gap is at a minimum value compared to values for all other vertical separations between the exterior surface of the upper flow guide and the upper surface of the wafer carrier. 13. A chemical vapor deposition reactor comprising: a central axis of symmetry;a flow flange assembly having a top and a bottom located opposite to the top of flow flange assembly, wherein the flow flange assembly comprises a main flange body and an upper flow guide comprising an adjacent wall, having an interior surface and an exterior surface located opposite to the interior surface, connected to the main flange body and located between the main flange body and a reaction chamber volume, wherein a first gap contacts the interior surface of the adjacent wall and extends along the interior surface of the adjacent wall between the adjacent wall of the upper flow guide and the main flange body of the flow flange assembly, wherein the flow flange assembly has (a) a bottom end interior surface with a normal line that is parallel to the central axis of symmetry and (b) a top end interior surface with a normal line that is perpendicular to the central axis of symmetry;a flow injector connected to the top of the flow flange assembly; anda wafer carrier located adjacent to the bottom of the flow flange assembly, wherein the exterior surface of the upper flow guide has a curved cross-sectional profile along a length of the exterior surface defined between a top end of the adjacent wall to a bottom end of the adjacent of the upper flow guide, wherein the bottom end of the adjacent wall is located opposite to the top end of the adjacent wall,wherein the central axis of symmetry traverses the flow flange assembly, the flow injector and the wafer carrier,wherein a second gap is provided between the exterior surface of the upper flow guide at an outermost diameter of the upper flow guide and an upper surface of the wafer carrier at an outermost diameter of the wafer carrier, wherein the second gap is at a minimum value compared to values for all other vertical separations between the exterior surface of the adjacent wall and the upper surface of the wafer carrier,wherein the upper flow guide has an upper diameter and a lower diameter, and further wherein the upper diameter is (i) less than a diameter of the wafer carrier and (ii) about 0.2 to 0.5 of the lower diameter. 14. The chemical vapor deposition reactor according to claim 1, wherein the main flange body has an underside that receives the interior surface of the adjacent wall of the upper flow guide to form the first gap between the upper flow guide and the main flange body. 15. The chemical vapor deposition reactor according to claim 3, wherein the first channel has one or more orifices located proximate to an end of the first channel and adjacent to the bottom/outer portion of the first gap. 16. The chemical vapor deposition reactor according to claim 15, wherein fluids are flowable from the first channel to the first gap via the one or more orifices of the first channel. 17. The chemical vapor deposition reactor according to claim 16, wherein the one or more orifices of the first channel are configured to restrict flow of the fluids such that a substantially equal flow rate of fluid passes through each orifice, producing a uniform flow delivery around an outer circumference of the first gap. 18. The chemical vapor deposition reactor according to claim 3, further comprising: one or more orifices connecting the top/inner portion of the first gap and the second channel. 19. The chemical vapor deposition reactor according to claim 18, wherein fluids are transferable from the first gap to the second channel via the one or more orifices.