A solid-state device that is capable of imparting a directional momentum via thermoelectric microelements. High surface area is used to enhance the efficiency of heat transfer. The device can be operated in adiabatic mode in order to minimize thermal emissions. The thermoelectric microelements inclu
A solid-state device that is capable of imparting a directional momentum via thermoelectric microelements. High surface area is used to enhance the efficiency of heat transfer. The device can be operated in adiabatic mode in order to minimize thermal emissions. The thermoelectric microelements include at least a hot layer and a cold layer arranged in a stack and means for heating and/or cooling the hot and cold layers so that the cold layer has a lower temperature than the hot layer; and at least one through hole in the stack wherein an entire length of the through hole is up to 10 times of a mean free path of a gas in which the device is immersed and/or is not greater than 1500 nm.
대표청구항▼
1. An apparatus operable to propel a gas, comprising: at least a first layer and a second layer arranged in a stack and means for heating and/or cooling the first and second layers to form a hot layer and a cold layer wherein the cold layer has a lower temperature than the hot layer; and,at least on
1. An apparatus operable to propel a gas, comprising: at least a first layer and a second layer arranged in a stack and means for heating and/or cooling the first and second layers to form a hot layer and a cold layer wherein the cold layer has a lower temperature than the hot layer; and,at least one through hole in the stack;wherein:a surface of each hot layer is exposed in an interior of the through hole; anda surface of each cold layer is exposed in the interior of the through hole;and wherein an entire length of the through hole is up to 10 times of a mean free path of a gas in which the apparatus is immersed and/or is not greater than 1500 nm, andwherein each hot layer has a chamfer facing inward and in a first direction, an angle between the chamfer of each hot layer and a center axis of the through hole being θ2;each cold layer has a chamfer facing inward and in a second direction opposed to the first direction, an angle between the chamfer of each cold layer and the center axis of the through hole being θ1. 2. The apparatus of claim 1, wherein means for heating and cooling the first and second layers is a Peltier device or a field-enhanced thermionic emission device. 3. The apparatus of claim 2, wherein the Peltier device or the field-enhanced thermionic emission device is interposed between the first and second layers. 4. The apparatus of claim 1, wherein the hot layer is heated by one or more resistive heaters, a chemical reaction, and/or radiation. 5. The apparatus of claim 1, wherein the through hole has progressively larger cross section areas from an upper face to a lower face of the stack; the exposed surface of each cold layer in the interior of the through hole is substantially parallel to a center axis of the through hole; the exposed surface of each hot layer in the interior of the through hole is substantially perpendicular to the center axis of the through hole. 6. The apparatus of claim 1, wherein a sum of θ1 and θ2 is from 85° to 95°. 7. The apparatus of claim 6, wherein θ2 is from 70 to 85°. 8. The apparatus of claim 6, wherein each hot layer has a thickness of th, each cold layer has a thickness of tc, and the ratio of th to tc is substantially equal to the ratio of cotangent of θ2 to cotangent of θ1. 9. The apparatus of claim 8, wherein tc is greater than th. 10. The apparatus of claim 1, wherein a gap is interposed between the hot and cold layers. 11. The apparatus of claim 10, wherein the gap comprises spacer elements. 12. The apparatus of claim 11, wherein the spacer elements comprise piezoelectric material. 13. A method of using the apparatus of claim 1 comprising exposing the apparatus to a gas at an ambient temperature and pressure and activating the means of heating and/or cooling alternating layers to form alternating hot and cold layers such that the gas is propelled through the through hole. 14. The method of claim 13 wherein each hot layer is hotter than the ambient temperature of the gas and each cold layer is colder than the ambient temperature of the gas. 15. The method of claim 13 wherein a mean temperature of all the hot and cold layers is substantially the same as the ambient temperature of the gas. 16. A method of manufacturing the apparatus of claim 1, comprising: running a simulation of an apparatus according to claim 1 having a specific selected starting geometric arrangement of through hole and layers, the simulation comprising initializing a group of simulated gas particles with random initial positions and momenta around a simulated apparatus, calculating positions and momenta of these particles after a small time interval from the initial positions and momenta using known physical laws, repeating the calculation through a chosen number of iterations, and analyzing the positions and momenta of the gas particles through the simulation,modifying the geometric arrangement of the device within a defined search space and running another simulation through a chosen number of iterations,identifying a geometric arrangement providing more efficient propulsion of gas particles through a simulated apparatus than the starting geometry;manufacturing an apparatus having the identified geometric arrangement. 17. An apparatus to propel a gas, comprising: a series of stacks, wherein each stack includes at least a first layer and a second layer arranged in a stack and means for heating and/or cooling the first and second layers to form a hot layer and a cold layer wherein the cold layer has a lower temperature than the hot layer; and,at least one through hole in the stack;wherein:a surface of each hot layer is exposed in an interior of the through hole; anda surface of each cold layer is exposed in the interior of the through hole;and wherein:an entire length of the through hole is up to 10 times of a mean free path of a gas in which the apparatus is immersed and/or is not greater than 1500 nm, wherein the series of stacks are arranged such that the hot layers and cold layers form an alternating stack of hot and cold layers, each hot layer is hotter than the immediately adjacent cold layers, each cold layer is colder than the immediate adjacent hot layers, and at least one through hole is aligned across the stack. 18. The apparatus of claim 17, wherein the through hole has a uniform size along its entire length. 19. The apparatus of claim 18, wherein the through hole has a cross-sectional shape of a circle, a slit or a comb. 20. The apparatus of claim 18, wherein the apparatus has at least 10 through holes per square centimeter and/or a total perimeter length of all the through holes of the apparatus per square centimeter is at least two centimeters. 21. The apparatus of claim 17 in which the diameter of the through hole of each member of the series is progressively different from an upper face to a lower face of the stack.
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이 특허에 인용된 특허 (2)
Bierwirth,Sebastian; Schwuchow,Karsten; Ruckdeschel,Rolf, Gas generator.
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