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A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) rad

A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength. Additionally, the method includes directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region.

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1. A method comprising: depositing a thin film on a first surface of a first substrate;moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces;generating electromagnetic (EM) radiation of a first wavelengt

1. A method comprising: depositing a thin film on a first surface of a first substrate;moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces;generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength; anddirecting the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region, wherein directing the EM radiation through one of the first and second substrates and onto the region of the thin film until the first and second substrates are fused in the region does not cause the first substrate or the second substrate to melt or flow. 2. The method of claim 1, wherein the thin film comprises an amorphous silicon thin film. 3. The method of claim 1, wherein the thin film comprises a metal thin film. 4. The method of claim 1, wherein the second surface of the second substrate comprises a thin film deposited on the second substrate. 5. The method of claim 1, further comprising forming a direct bond between the second surface and the thin film prior to directing the EM radiation onto the region of the thin film. 6. The method of claim 1, wherein the one of the first and second substrates is transparent to the EM radiation at the first wavelength. 7. The method of claim 1, further comprising: determining when the first and second substrates are fused in the region; andredirecting the EM radiation onto a different region of the thin film in response to a determination that the first and second substrates are fused in the region. 8. The method of claim 1, further comprising: determining that the first and second substrates have fused in response to a passage of a predetermined amount of time during which the EM radiation is directed onto the region of the thin film; andredirecting the EM radiation onto a different region of the thin film after passage of the predetermined amount of time. 9. The method of claim 1, further comprising: detecting an amount of the generated EM radiation that is transmitted through the region; anddetermining when the first and second substrates have fused based on the amount of the generated EM radiation that is transmitted through the region. 10. The method of claim 1, further comprising determining that the first and second substrates have fused in the region based on a detected level of transparency of the region in the visual spectrum. 11. The method of claim 1, wherein the thickness of the thin film is less than 100 nanometers. 12. The method of claim 1, further comprising generating the EM radiation using a laser device. 13. The method of claim 12, wherein the generated EM radiation comprises a collimated beam of EM radiation. 14. The method of claim 12, further comprising focusing the EM radiation at a focal point located in the region of the thin film. 15. The method of claim 1, further comprising generating a plurality of wavelengths of EM radiation, the plurality of wavelengths including the first wavelength. 16. The method of claim 1, wherein the region of the thin film is tinted in the visible spectrum prior to directing the EM radiation onto the region, and wherein the region is transparent and colorless in the visible spectrum after the first and second substrates are fused in the region. 17. The method of claim 1, wherein the task of depositing the thin film on the first surface of the first substrate is performed using at least one of a physical vapor deposition process and a chemical vapor deposition process. 18. The method of claim 1, wherein: the first substrate comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride, andthe second substrate comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride. 19. A method comprising: depositing a thin film on a first surface of a first wafer;moving a second surface of a second wafer into contact with the thin film such that the thin film is located between the first and second surfaces, wherein the first and second wafers at least partially define a plurality of cavities;generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength; anddirecting the EM radiation through one of the first and second wafers and onto a region of the thin film until the first and second wafers are fused in the region, wherein directing the EM radiation through one of the first and second wafers and onto a region of the thin film until the first and second wafers are fused in the region does not cause the first wafer or the second wafer to melt or flow. 20. The method of claim 19, further comprising disposing electronic components within at least some of the plurality of cavities. 21. The method of claim 20, further comprising: depositing the thin film on the first surface such that the thin film circumscribes the plurality of cavities; anddirecting the EM radiation on the thin film such that the first and second wafers are fused in the regions circumscribing the plurality of cavities. 22. The method of claim 20, further comprising dicing the first and second wafers to produce a plurality of devices, each of the plurality of devices comprising at least one of the plurality of cavities. 23. The method of claim 19, wherein: the thin film comprises amorphous silicon,the first wafer comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride, andthe second wafer comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride. 24. A method comprising: forming a stack of N substrates, wherein at least one of a plurality of intermediate layers is disposed between each of the N substrate;generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that each of the plurality of intermediate layers absorbs EM radiation at the first wavelength; anddirecting the generated EM radiation through the stack of N substrates and the plurality of intermediate layers until each of the N substrates are fused to another one of the N substrates, wherein N is an integer greater than 2, wherein directing the generated EM radiation through the stack of N substrates and the plurality of intermediate layers until each of the N substrates are fused to another one of the N substrates does not cause any of the N substrates to melt or flow. 25. The method of claim 24, further comprising depositing each of the plurality of intermediate layers as thin films prior to forming the stack N substrates. 26. The method of claim 24, wherein the N substrates comprise N glass substrates, and wherein each of the plurality of intermediate layers comprises an amorphous silicon layer. 27. The method of claim 24, further comprising generating the EM radiation using a laser device. 28. The method of claim 27, wherein the generated EM radiation comprises a collimated beam of EM radiation. 29. The method of claim 24, wherein the at least one of the plurality of intermediate layers is deposited using at least one of a physical vapor deposition process and a chemical vapor deposition process. 30. The method of claim 24, wherein at least one of the N substrates comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride. 31. A method comprising: depositing an intermediate layer on a first surface of a first substrate;disposing a second surface of a second substrate into contact with the intermediate layer such that the intermediate layer is located between the first and second surfaces;generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the intermediate layer absorbs EM radiation at the first wavelength; anddirecting the EM radiation through one of the first and second substrates and onto a localized region of the intermediate layer until the first and second substrates are fused, wherein directing the EM radiation through one of the first and second substrates causes melting only in the localized region of the intermediate layer and the first or second substrates without melting of the first substrate or the second substrate outside the localized region. 32. The method of claim 31, wherein the first and second substrates include at least one or more cavities. 33. The method of claim 32, further comprising disposing a component within the at least one or more cavities. 34. The method of claim 32, further comprising: depositing the intermediate layer on the first surface such that the intermediate layer circumscribes the at least partially defined one or more cavities; anddirecting the EM radiation on the intermediate layer such that the first and second substrates are fused in the regions circumscribing the at least partially defined one or more cavities. 35. The method of claim 32, further comprising dicing the first and second substrates to produce a plurality of devices, wherein at least one of the plurality of devices includes one of the at least partially defined one or more cavities. 36. The method of claim 31, wherein the task of depositing the intermediate layer on the first surface of the first substrate is performed using at least one of a physical vapor deposition process and a chemical vapor deposition process. 37. The method of claim 31, wherein: the first substrate comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride, andthe second substrate comprises at least one of glass, quartz, silica, sapphire, silicon carbide, diamond, and gallium nitride.