초록 ▼

A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer i

A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer is almost in a single-crystal state. Accordingly, a small thin display device with low power consumption can be manufactured. Further, a controller and a shift register which is included in a source driver are operated at the same power supply voltage. Thus, power consumption can be reduced.

대표청구항 ▼

1. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel po

1. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel portion comprising a first thin film transistor; anda shift register circuit electrically connected to the power supply circuit and the controller circuit,wherein the first potential is the highest potential in the controller circuit and in the shift register circuit,wherein the controller circuit is configured to be supplied with the first potential and a ground potential,wherein the controller circuit is configured to output a first signal to the shift register circuit,wherein the shift register circuit is configured to be supplied with the first potential, the ground potential and the first signal, andwherein the shift register circuit comprises a second thin film transistor. 2. The semiconductor device according to claim 1, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors. 3. The semiconductor device according to claim 1, wherein the difference between the first potential and the ground potential is 3V or less. 4. The semiconductor device according to claim 1, wherein the first substrate comprises the power supply circuit. 5. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel portion comprising a first thin film transistor; anda driver circuit electrically connected to the power supply circuit and the controller circuit,wherein the controller circuit is configured to be supplied with the first potential and a ground potential,wherein the controller circuit is configured to output a first signal to the driver circuit,wherein the driver circuit is configured to supply a video signal to the pixel portion,wherein the driver circuit comprises a shift register circuit configured to be supplied with the first potential, the ground potential and the first signal,wherein the first potential is the highest potential in the controller circuit and in the shift register circuit, andwherein the shift register circuit comprises a second thin film transistor. 6. The semiconductor device according to claim 5, wherein the driver circuit further comprises one selected from the group consisting of a level shifter circuit, a sampling circuit, a latch circuit, and a DA converter circuit. 7. The semiconductor device according to claim 5, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors. 8. The semiconductor device according to claim 5, wherein the difference between the first potential and the ground potential is 3V or less. 9. The semiconductor device according to claim 5, wherein the first substrate comprises the power supply circuit. 10. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel portion comprising a first thin film transistor; anda driver circuit electrically connected to the power supply circuit and the controller circuit,wherein the controller circuit is configured to be supplied with the first potential and a ground potential,wherein the controller circuit is configured to output a first signal to the driver circuit,wherein the driver circuit is configured to supply a selection signal to the pixel portion,wherein the driver circuit comprises a shift register circuit configured to be supplied with the first potential, the ground potential and the first signal,wherein the first potential is the highest potential in the controller circuit and in the shift register circuit, andwherein the shift register circuit comprises a second thin film transistor. 11. The semiconductor device according to claim 10, wherein the driver circuit further comprises one selected from the group consisting of a level shifter circuit and a buffer circuit. 12. The semiconductor device according to claim 10, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors. 13. The semiconductor device according to claim 10, wherein the difference between the first potential and the ground potential is 3V or less. 14. The semiconductor device according to claim 10, wherein the first substrate comprises the power supply circuit. 15. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel portion comprising a first thin film transistor;a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a video signal to the pixel portion; anda dc-dc converter circuit electrically connected to the power supply circuit, and configured to be supplied with the first potential and supply a second potential higher than the first potential to the driver circuit,wherein the controller circuit is configured to be supplied with the first potential and a ground potential,wherein the controller circuit is configured to output a first signal to the driver circuit,wherein the driver circuit comprises a shift register circuit configured to be supplied with the first potential, the ground potential and the first signal,wherein the first potential is the highest potential in the controller circuit and in the shift register circuit,wherein the shift register circuit comprises a second thin film transistor, andwherein the dc-dc converter circuit comprises a third thin film transistor. 16. The semiconductor device according to claim 15, wherein the driver circuit further comprises one selected from the group consisting of a level shifter circuit, a sampling circuit, a latch circuit, and a DA converter circuit. 17. The semiconductor device according to claim 15, wherein the first thin film transistor, the second thin film transistor and the third thin film transistor are single-crystal thin film transistors. 18. The semiconductor device according to claim 15, wherein the difference between the first potential and the ground potential is 3V or less. 19. The semiconductor device according to claim 15, wherein the first substrate comprises the power supply circuit. 20. A semiconductor device comprising: a first substrate comprising: a controller circuit electrically connected to a power supply circuit which is configured to output a first potential, the entirety of the controller circuit being on the first substrate; anda second substrate comprising: a pixel portion comprising a first thin film transistor;a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a selection signal to the pixel portion; anda dc-dc converter circuit electrically connected to the power supply circuit, and configured to be supplied with the first potential and supply a second potential higher than the first potential to the driver circuit,wherein the controller circuit is configured to be supplied with the first potential and a ground potential,wherein the controller circuit is configured output a first signal,wherein the driver circuit comprises a shift register circuit configured to be supplied with the first potential, the ground potential and the first signal,wherein the first potential is the highest potential in the controller circuit and in the shift register circuit,wherein the shift register circuit comprises a second thin film transistor, andwherein the dc-dc converter circuit comprises a third thin film transistor. 21. The semiconductor device according to claim 20, wherein the driver circuit further comprises one selected from the group consisting of a level shifter circuit and a buffer circuit. 22. The semiconductor device according to claim 20, wherein the first thin film transistor, the second thin film transistor and the third thin film transistor are single-crystal thin film transistors. 23. The semiconductor device according to claim 20, wherein the difference between the first potential and the ground potential is 3V or less. 24. The semiconductor device according to claim 20, wherein the first substrate comprises the power supply circuit.