초록 ▼

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer.

대표청구항 ▼

1. A method of manufacturing a light-emitting device, comprising: forming a plurality of insulation walls on a substrate;forming a compound semiconductor structure and a P-type electrode layer in an interior space defined by the plurality of insulation walls;forming corresponding N-type electrode la

1. A method of manufacturing a light-emitting device, comprising: forming a plurality of insulation walls on a substrate;forming a compound semiconductor structure and a P-type electrode layer in an interior space defined by the plurality of insulation walls;forming corresponding N-type electrode layers in the plurality of insulating walls; andattaching a conductive substrate in which a plurality of N-type electrode connecting layers are separated from a P-type electrode connecting layer,wherein the attaching of the conductive substrate comprises: penetrating the conductive substrate to form a plurality of holes; andfilling each of the plurality of holes with an insulating material and forming a plurality of partition walls separating the P-type electrode connecting layer from the plurality of N-type electrode connecting layers. 2. The method of claim 1, wherein the forming of the plurality of insulation walls on the substrate comprises: forming a second N-type compound semiconductor layer on the substrate;forming an insulating layer on the second N-type compound semiconductor layer; andpatterning the insulating layer to form a plurality of spaced-apart insulation walls on either side of the substrate. 3. The method of claim 2, wherein the forming of the compound semiconductor structure and the P-type electrode layer comprises sequentially stacking a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer to form the compound semiconductor structure and forming the P-type electrode layer on the P-type compound semiconductor layer. 4. The method of claim 2, wherein the forming of the corresponding N-type electrode layers in the plurality of insulating walls comprises penetrating the corresponding plurality of insulation walls to form a plurality of holes extending from top surfaces of the plurality of insulation walls to a top surface of the second N-type compound semiconductor layer and filling the plurality of holes with a metallic material. 5. The method of claim 2, wherein the second N-type compound semiconductor layer has a concave-convex structure formed on its top surface. 6. The method of claim 5, further comprising forming a phosphor layer on the concave-convex structure. 7. The method of claim 1, wherein the plurality of insulation walls are formed on the substrate prior to the forming of the compound semiconductor structure and the P-type electrode layer in the interior space defined by the plurality of insulation walls. 8. A method of manufacturing a light-emitting device, comprising: forming a plurality of insulation walls on a substrate;forming a compound semiconductor structure and a P-type electrode layer in an interior space defined by the plurality of insulation walls;forming corresponding N-type electrode layers in the plurality of insulating walls; andattaching a conductive substrate in which a plurality of N-type electrode connecting layers are separated from a P-type electrode connecting layer,wherein the forming of the corresponding N-type electrode layers in the plurality of insulating walls comprises penetrating the corresponding plurality of insulation walls to form a plurality of holes extending from top surfaces of the plurality of insulation walls to a top surface of a second N-type compound semiconductor layer formed on the substrate and filling the plurality of holes with a metallic material, andwherein the attaching of the conductive substrate comprises: forming a conductive adhesive layer on the conductive substrate;penetrating the conductive substrate and the conductive adhesive layer to form a plurality of holes;filling each of the plurality of holes with an insulating material and forming a plurality of partition walls separating the P-type electrode connecting layer from the plurality of N-type electrode connecting layers; andattaching the conductive substrate so that the plurality of N-type electrode connecting layers respectively correspond to the plurality of N-type electrode layers and the P-type electrode connecting layer corresponds to the P-type electrode layer. 9. The method of claim 8, wherein the plurality of partition walls contact with the plurality of insulation walls. 10. The method of claim 9, further comprising removing the substrate.