IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0556596
(2009-09-10)
|
등록번호 |
US-8823935
(2014-09-02)
|
발명자
/ 주소 |
- Meeks, Steven W.
- Xu, Xiaoqian
- Nguyen, Hung P.
- Moghadam, Alireza Shahdoost
- Ramachandran, Mahendra Prabhu
|
출원인 / 주소 |
|
대리인 / 주소 |
Luedeka Neely Group, P.C.
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
12 |
초록
▼
A system to detect and classify defects on a surface of a substrate. A first targeting assembly directs radiation in a first beam onto the substrate. A first collecting assembly collects first radiation specularly reflected from the substrate and produces first signals, a second collecting assembly
A system to detect and classify defects on a surface of a substrate. A first targeting assembly directs radiation in a first beam onto the substrate. A first collecting assembly collects first radiation specularly reflected from the substrate and produces first signals, a second collecting assembly collects first radiation scattered from the surface of the substrate by defects and not micro-roughness and produces second signals, and a third collecting assembly collects first radiation scattered from the surface of the substrate by defects and micro-roughness and produces third signals. A second targeting assembly directs radiation in a second beam onto the substrate. A fourth collecting assembly collects second radiation scattered from the substrate and produces fourth signals. A processor receives the first, second, third, and fourth signals. A module coupled to the processor has logic instructions stored in a computer-readable medium, which configure the processor to analyze the signals to detect and classify the defects on the substrate.
대표청구항
▼
1. An apparatus to detect and classify defects on a surface of a substrate, comprising: an ellipsoid of revolution disposed over the substrate, having first and second open ends with first and second loci at the first and second open ends respectively, a reflective interior, and separate first, seco
1. An apparatus to detect and classify defects on a surface of a substrate, comprising: an ellipsoid of revolution disposed over the substrate, having first and second open ends with first and second loci at the first and second open ends respectively, a reflective interior, and separate first, second, and third apertures,a first radiation targeting assembly to direct first radiation having a first peak wavelength in a first beam along a first path between the ellipsoid of revolution and the substrate and onto the surface of the substrate at the position of the first locus, thereby forming a specularly reflected first beam that leaves the surface of the substrate along a path between the ellipsoid of revolution and the substrate, and also forming scattered first radiation that is reflected by the ellipsoid of revolution to the second locus,a second radiation targeting assembly to direct second radiation having a second peak wavelength in a second beam along a second path through the first aperture in the ellipsoid of revolution and onto the surface of the substrate at the position of the first locus, thereby forming a specularly reflected second beam that leaves the surface of the substrate along a path through the second aperture of the ellipsoid of revolution, and also forming scattered second radiation that is reflected by the ellipsoid of revolution to the second locus,where the first beam and the second beam are directed onto the surface of the substrate simultaneously,the first radiation targeting assembly is separate from the second radiation targeting assembly, andthe first peak wavelength is different from the second peak wavelength,a first radiation collecting assembly to collect the specularly reflected first beam and produce first signals,a second radiation collecting assembly to collect first radiation from the second locus and produce second signals,a third radiation collecting assembly to collect second radiation from the second locus and produce third signals,a fourth radiation collecting assembly to selectively collect one of, first scattered radiation through the third aperture,second scattered radiation through the third aperture, andfirst and second scattered radiation through the third aperture, andproduce fourth signals,a processor coupled to the first, second, third, and fourth radiation collecting assemblies, for receiving the first, second, third, and fourth signals,a memory module coupled to the processor and comprising logic instructions stored in a computer-readable storage medium, which when executed by the processor configure the processor to, record the first, second, third, and fourth signals, andanalyze the first, second, third, and fourth signals to detect and classify defects on the surface of the substrate. 2. The apparatus of claim 1, wherein the second radiation targeting assembly directs the second beam onto the surface of the substrate at an incidence angle that is no more than thirty degrees from normal to the surface of the substrate. 3. The apparatus of claim 1, wherein the first radiation targeting assembly directs the first beam onto the surface of the substrate at an incidence angle that is greater than fifty degrees from normal to the surface of the substrate. 4. The apparatus of claim 1, wherein the first peak wavelength is four hundred and five nanometers. 5. The apparatus of claim 1, wherein the second peak wavelength is six hundred and sixty nanometers. 6. The apparatus of claim 1, wherein the logic instructions further configure the processor to compare a ratio comprised of at least one of the combinations including: the fourth signal with the third signal, the fourth signal with the second signal, the third signal with the second signal, the third and fourth signals with the first and second signals, the third signal with the first and second signals, the fourth signal with the first and second signals, the third and fourth signals with the first signal, the third and fourth signals with the second signal, the third signal with the first signal, the third signal with the second signal, the fourth signal with the first signal, and the fourth signal with the second signal. 7. The apparatus of claim 6 where the ratio is based at least in part on amplitudes of the signals. 8. The apparatus of claim 6 where the ratio is based at least in part on scatter areas represented by the signals, where the scatter areas are determined by where the signals exceed a threshold. 9. The apparatus of claim 1, wherein the first radiation is in a first polarization state and the second radiation is in a second polarization state, where the first polarization state is different from the second polarization state. 10. The apparatus of claim 1, wherein the logic instructions further configure the processor to compare a change between: a first ratio comprised of at least one of the combinations including: the fourth signal with the third signal, the fourth signal with the second signal, the third signal with the second signal, the third and fourth signals with the first and second signals, the third signal with the first and second signals, the fourth signal with the first and second signals, the third and fourth signals with the first signal, the third and fourth signals with the second signal, the third signal with the first signal, the third signal with the second signal, the fourth signal with the first signal, and the fourth signal with the second signal, where the radiation is in a first polarization state, anda second ratio comprised of the same combination as the first ratio, where the radiation is in a second polarization state, where the first polarization state is different from the second polarization state.
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