[특허]Manufacturing method of SOI substrate

Manufacturing method of SOI substrate 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/46 H01L-021/268 H01L-021/3065 H01L-021/84 H01L-021/02 H01L-021/302 H01L-021/762
출원번호	US-0247487 (2008-10-08)
등록번호	US-8828844 (2014-09-09)
우선권정보	JP-2007-265014 (2007-10-10); JP-2007-285567 (2007-11-01)
발명자 / 주소	Ohnuma, Hideto Kakehata, Tetsuya Shimomura, Akihisa Sasagawa, Shinya Kurata, Motomu
출원인 / 주소	Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소	Robinson, Eric J.
인용정보	피인용 횟수 : 0 인용 특허 : 38

초록 ▼

A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.

대표청구항 ▼

1. A method for manufacturing an SOI substrate comprising the steps of: forming a first insulating layer containing silicon nitride in contact with a single crystal semiconductor substrate;forming a damaged region in the single crystal semiconductor substrate by generating plasma and by adding ion species contained in the plasma to the single crystal semiconductor substrate through the first insulating layer;forming a second insulating layer in contact with the first insulating layer after forming the damaged region;bonding a supporting substrate to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the first insulating layer and the second insulating layer interposed therebetween;separating a single crystal semiconductor layer from the single crystal semiconductor substrate at the damaged region and attaching the single crystal semiconductor layer to the supporting substrate by heating the single crystal semiconductor substrate;performing a dry etching on the single crystal semiconductor layer; andirradiating the single crystal semiconductor layer with a laser beam after performing the dry etching. 2. The method for manufacturing an SOI substrate according to claim 1, wherein a dry etching step is further performed after the irradiating step. 3. The method for manufacturing the SOI substrate according to claim 1, wherein the supporting substrate is a glass substrate. 4. The method for manufacturing the SOI substrate according to claim 1, wherein a surface of the single crystal semiconductor layer is melted and solidified by the irradiating step. 5. The method for manufacturing the SOI substrate according to claim 1, wherein a surface of the single crystal semiconductor layer is planarized by the irradiating step. 6. The method for manufacturing the SOI substrate according to claim 1, wherein the laser beam is irradiated in an inert gas atmosphere. 7. The method for manufacturing the SOI substrate according to claim 1, wherein the ion species contained in the plasma includes fluorine or chlorine. 8. The method for manufacturing the SOI substrate according to claim 1, wherein the second insulating layer is silicon oxide containing hydrogen or silicon nitride containing hydrogen. 9. A method for manufacturing an SOI substrate comprising the steps of: forming a first insulating layer containing silicon nitride in contact with a single crystal semiconductor substrate;forming a damaged region in the single crystal semiconductor substrate by generating plasma and by adding ion species contained in the plasma to the single crystal semiconductor substrate through the first insulating layer;forming a second insulating layer in contact with the first insulating layer after forming the damaged region;bonding a supporting substrate to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the first insulating layer and the second insulating layer interposed therebetween;separating a single crystal semiconductor layer from the single crystal semiconductor substrate at the damaged region and attaching the single crystal semiconductor layer to the supporting substrate by heating the single crystal semiconductor substrate;performing a dry etching on the single crystal semiconductor layer; andirradiating the single crystal semiconductor layer with a laser beam in a vacuum state after performing the dry etching. 10. The method for manufacturing an SOI substrate according to claim 9, wherein a dry etching step is further performed after the irradiating step. 11. The method for manufacturing the SOI substrate according to claim 9, wherein the supporting substrate is a glass substrate. 12. The method for manufacturing the SOI substrate according to claim 9, wherein a surface of the single crystal semiconductor layer is melted and solidified by the irradiating step. 13. The method for manufacturing the SOI substrate according to claim 9, wherein a surface of the single crystal semiconductor layer is planarized by the irradiating step. 14. The method for manufacturing the SOI substrate according to claim 9, wherein the ion species contained in the plasma includes fluorine or chlorine. 15. The method for manufacturing the SOI substrate according to claim 9, wherein the second insulating layer is silicon oxide containing hydrogen or silicon nitride containing hydrogen.

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