Methods and apparatus for a gas panel with constant gas flow
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/52
H01L-021/67
출원번호
US-0244286
(2014-04-03)
등록번호
US-8834955
(2014-09-16)
발명자
/ 주소
Bauer, Matthias
Bartlett, Gregory M.
출원인 / 주소
ASM America, Inc.
대리인 / 주소
The Noblitt Group, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
2
초록▼
A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent lin
A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.
대표청구항▼
1. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system, comprising: directing a first mass flow rate of a carrier gas from a deposition sub-panel to the reaction chamber through an injection line;directing a
1. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system, comprising: directing a first mass flow rate of a carrier gas from a deposition sub-panel to the reaction chamber through an injection line;directing a mass flow rate of at least one deposition process gas from the deposition sub-panel to a vent line during a first state in response to a first command from a control system;directing a second mass flow rate of the carrier gas from the deposition sub-panel to the reaction chamber through the injection line during the first state, in response to the first command from the control system wherein: the second mass flow rate of the carrier gas is combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber; andthe second mass flow rate of the carrier gas is adjusted by the control system to equal the mass flow rate of the at least one deposition process gas;redirecting the second mass flow rate of the carrier gas from the deposition sub-panel to the vent line during the second state in response to a second command from the control system; andredirecting the mass flow rate of the at least one deposition process gas from the deposition sub-panel to the reaction chamber through the injection line during a second state in response to the second command from the control system, wherein the mass flow rate of the at least one deposition process gas is combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber. 2. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system according to claim 1, wherein the first and second states are repeated over a predetermined period of time. 3. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system according to claim 1, wherein the second state comprises a deposition process step. 4. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system according to claim 1, wherein directing and redirecting the carrier and deposition process gases comprises: coupling a first valve system to the injection line and the vent line, wherein the first valve system is configured to: seal off the second mass flow rate of the carrier gas from the vent line during the first state in response to the first command from the control system; andseal off the second mass flow rate of the carrier gas from the injection line during the second state in response to the second command from the control system; andcoupling a second valve system to the injection line and the vent line, wherein the second valve system is configured to: seal off the mass flow rate of at least one deposition process gas from the injection line during the first state in response to the first command from the control system; andseal off the mass flow rate of at least one deposition process gas from the vent line during the second state in response to the second command from the control system. 5. A method for supplying a constant flow rate of carrier and deposition process gases to a reaction chamber of a cyclic deposition and etch system, comprising: stabilizing a mass flow rate of a deposition process gas from a deposition sub-panel through a first valve to a vent line;stabilizing a first mass flow rate of a carrier gas from the deposition sub-panel through an injection line linked to the reaction chamber;stabilizing a second mass flow rate of the carrier gas from the deposition sub-panel through a second valve to the reaction chamber through the injection line, wherein the second mass flow rate of the carrier gas is adjusted by a control system to equal the mass flow rate of the deposition process gas;initiating a deposition process by substantially simultaneously activating the first and second valves in response to a first command from the control system, wherein: activation of the first valve causes the mass flow rate of the deposition process gas to be redirected from the vent line to the injection line, wherein the mass flow rate of the deposition process gas is combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber; andactivation of the second valve causes the second mass flow rate of the carrier gas to be redirected from the injection line to the vent line. 6. A method for supplying a constant flow rate of carrier and deposition process gases according to claim 5, further comprising initiating a purge process by substantially simultaneously activating the first and second valves in response to a second command from the control system, wherein: activation of the first valve causes the mass flow rate of the deposition process gas to be redirected from the injection line to the vent line; andactivation of the second valve causes the second mass flow rate of the carrier gas to be redirected from the vent line to the injection line, wherein the second mass flow rate of the carrier gas is combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber. 7. A method for supplying a constant flow rate of carrier and deposition process gases according to claim 5, further comprising: coupling a first mass flow controller to the mass flow rate of the deposition process gas, wherein the first mass flow controller is responsive to the control system and configured to supply a predetermined mass flow rate of the deposition process gas to the first valve; andcoupling a second mass flow controller to the second mass flow rate of the carrier gas, wherein the second mass flow controller is responsive to the control system and configured to adjust the second mass flow rate of the carrier gas supplied to the second valve. 8. A method for supplying a constant flow rate of carrier and deposition process gases according to claim 5, further comprising: stabilizing a second mass flow rate of a second deposition process gas from the deposition sub-panel through a third valve to the vent line;adjusting, by the control system, the second mass flow rate of the carrier gas to equal a combined mass flow rate of the first and second deposition process gases;initiating the deposition process by substantially simultaneously activating the first, second, and third valves in response to the first command from the control system, wherein: activation of the first and third valve causes the combined mass flow rate of the first and second deposition process gases to be redirected from the vent line to the injection line, wherein the combined mass flow rate of the first and second deposition process gases are combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber; andactivation of the second valve causes the second mass flow rate of the carrier gas to be redirected from the injection line to the vent line. 9. A method for supplying a constant flow rate of carrier and deposition process gases according to claim 8, further comprising initiating a purge process by substantially simultaneously activating the first, second, and third valves in response to a second command from the control system, wherein: activation of the first and second valves causes the combined mass flow rate of the first and second deposition process gases to be redirected from the injection line to the vent line; andactivation of the second valve causes the second mass flow rate of the carrier gas to be redirected from the vent line to the injection line, wherein the second mass flow rate of the carrier gas is combined with the first mass flow rate of the carrier gas prior to entering the reactor chamber. 10. A method for supplying a constant flow rate of carrier and deposition process gases according to claim 8, further comprising: coupling a first mass flow controller to the mass flow rate of the deposition process gas, wherein the first mass flow controller is responsive to the control system and configured to supply a predetermined mass flow rate of the deposition process gas to the first valve;coupling a second mass flow controller to the second mass flow rate of the second deposition process, wherein the second mass flow controller is responsive to the control system and configured to supply a predetermined mass flow rate of the second deposition process gas to the third valve; andcoupling a third mass flow controller to the second mass flow rate of the carrier gas, wherein the second mass flow controller is responsive to the control system and configured to adjust the second mass flow rate of the carrier gas supplied to the second valve.
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이 특허에 인용된 특허 (2)
Lopata Eugene S. ; Felts John T., Method of plasma enhanced silicon oxide deposition.
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