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Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semicon

Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.

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1. An engineered substrate, comprising a layer of indium gallium nitride wafer bonded directly to a layer of borophosphosilicate glass overlying a substrate, a plurality of openings extending through the layer of indium gallium nitride and partially through the layer of borophosphosilicate glass, wh

1. An engineered substrate, comprising a layer of indium gallium nitride wafer bonded directly to a layer of borophosphosilicate glass overlying a substrate, a plurality of openings extending through the layer of indium gallium nitride and partially through the layer of borophosphosilicate glass, wherein the openings of the plurality of openings extend a distance into the layer of borophosphosilicate glass material that is from about 10% to about 95% of a thickness of the layer of borophosphosilicate glass material, and wherein the layer of indium gallium nitride exhibits a relaxed lattice structure and has an exposed surface on an opposing side thereof from the layer of borophosphosilicate glass. 2. The engineered substrate of claim 1, wherein the layer of indium gallium nitride comprises a plurality of structures overlying the layer of borophosphosilicate glass. 3. The engineered substrate of claim 1, wherein the layer of indium gallium nitride comprises a continuous layer of indium gallium nitride. 4. The engineered substrate of claim 1, further comprising a plurality of structures comprising an anti-surfactant material disposed on the layer of borophosphosilicate glass and underlying the layer of indium gallium nitride. 5. The engineered substrate of claim 1, wherein the layer of indium gallium nitride comprises an epitaxial layer of In0.1Ga0.9N. 6. An intermediate structure formed during fabrication of an engineered substrate, the intermediate structure comprising a plurality of openings extending through a layer of indium gallium nitride and partially though a layer of borophosphosilicate glass material overlying a base substrate, the openings of the plurality of openings extending a distance into the layer of borophosphosilicate glass material that is from about 10% to about 95% of a thickness of the layer of borophosphosilicate glass material, the layer of indium gallium nitride being wafer bonded directly to the glass material and having an exposed surface on an opposing side thereof from the glass material, the layer of glass material exhibiting a viscosity sufficient to provide redistribution thereof. 7. The intermediate structure of claim 6, further comprising a dielectric material disposed in each of the openings. 8. The intermediate structure of claim 6, wherein the layer of indium gallium nitride comprises a plurality of structures overlying the layer of borophosphosilicate glass. 9. The intermediate structure of claim 6, wherein the layer of indium gallium nitride comprises a continuous layer of indium gallium nitride. 10. The intermediate structure of claim 6, further comprising a plurality of structures comprising an anti-surfactant material disposed on the layer of borophosphosilicate glass and underlying the layer of indium gallium nitride. 11. The intermediate structure of claim 6, wherein the layer of indium gallium nitride comprises an epitaxial layer of In0.1Ga0.9N. 12. The intermediate structure of claim 6, wherein the borophosphosilicate glass includes at least about 4% by weight boron and at least about 4% by weight phosphorous. 13. The engineered substrate of claim 1, wherein the borophosphosilicate glass includes at least about 4% by weight boron and at least about 4% by weight phosphorous.