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A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a se

A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer; bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate.

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1. A composite structure comprising: an elastomer component with a Young's Modulus between about 50 Pa and about 10 MPa including a micro-recess;a substantially planar nonelastomer component sealed against the elastomer component; andan active device disposed within the nonelastomer component, where

1. A composite structure comprising: an elastomer component with a Young's Modulus between about 50 Pa and about 10 MPa including a micro-recess;a substantially planar nonelastomer component sealed against the elastomer component; andan active device disposed within the nonelastomer component, wherein the active device is an electronic device configured to interact with a material present in the micro-recess. 2. The composite structure of claim 1 wherein the electronic device is selected from the group consisting of a photodiode, a fiber optic device, a fiber optic interconnect, a light emitting diode, a laser diode, vertical cavity surface emitting laser (VCSEL), a micromirror, a CMOS imaging array, a CCD camera, a waveguide, and a source or a receiver for visible, infrared, or ultraviolet regions of the electromagnetic spectrum. 3. The composite structure of claim 1 wherein the electronic device is selected from the group consisting of a resistor, a capacitor, a transistor, a chemical field effect transistor, a amperometric/coulometric electrochemical sensor, an accelerometer, a pressure sensor, a flow sensor, an electronic logic structure, a microprocessor, a chemical sensor, a strain gauge, an inductor, an actuator, a coil, a magnet, an electromagnet, a magnetic sensor, a radio frequency source, a radio frequency receiver, a microwave frequency source, a microwave frequency receiver, a radioactive particle counter, and an electrometer. 4. The composite structure of claim 1 wherein the electronic device is selected from the group consisting of a thermistor, a Peltier cooler, and a resistive heater. 5. The composite structure of claim 1 wherein elastomer component comprises a membrane portion and wherein the electronic device is an electrode that electrostatically drives the membrane portion of the elastomer component into the micro-recess. 6. The composite structure of claim 1 wherein the electronic device comprises an electrochemical sensor. 7. A method of fabricating a composite structure comprising: forming a micro-recess in an elastomer component, wherein the elastomer component has a Young's Modulus between about 50 Pa and about 10 MPa;forming a substantially planar nonelastomer component with an active device, disposed within the nonelastomer component; andsealing the elastomer component against the nonelastomer component, such that the active device is an electronic device configured to interact with a material present within the micro-recess. 8. The method of claim 6 wherein sealing the elastomer component against the nonelastomer component comprises forming a Van der Waals chemical bond. 9. The method of claim 6 wherein sealing the elastomer component against the nonelastomer component comprises: placing the elastomer component against the non-elastomeric component with a liquid layer, andremoving the liquid layer. 10. The method of claim 6 wherein sealing the elastomer component against the nonelastomer component comprises forming a covalent chemical bond. 11. The method of claim 6 wherein sealing the elastomer component against the nonelastomer component comprises forming an ionic chemical bond. 12. The method of claim 6 wherein the electronic device comprises a device selected from the group consisting of a photodiode, a fiber optic device, a fiber optic interconnect, a light emitting diode, a laser diode, vertical cavity surface emitting laser (VCSEL), a micromirror, a CMOS imaging array, a CCD camera, a waveguide, and a source or a receiver for visible, infrared, or ultraviolet regions of the electromagnetic spectrum. 13. The method of claim 6 wherein the electronic device comprises an electronic structure selected from the group consisting of a resistor, a capacitor, a transistor, a chemical field effect transistor, a amperometric/coulometric electrochemical sensor, an accelerometer, a pressure sensor, a flow sensor, an electronic logic structure, a microprocessor, a chemical sensor, a strain gauge, an inductor, an actuator, a coil, a magnet, an electromagnet, a magnetic sensor, a radio frequency source, a radio frequency receiver, a microwave frequency source, a microwave frequency receiver, a radioactive particle counter, and an electrometer. 14. The method of claim 6 wherein the electronic device comprises a thermal structure selected from the group consisting of a thermistor, a Peltier cooler, and a resistive heater. 15. The method of claim 6 wherein the electronic device is formed in the nonelastomer component by a technique selected from the group consisting of PCB technology, CMOS, surface micromachining, bulk micromachining, printable polymer electronics, Thin Film Transistor, and other amorphous/polycrystalline material techniques. 16. The method of claim 6 wherein the electronic device formed in the nonelastomer component comprises an electrochemical sensor. 17. The composite structure of claim 1 wherein the elastomer component comprises a ceiling and walls for forming the micro-recess, and wherein the nonelastomer component comprises a floor located opposite the ceiling, and wherein the electronic device is located within the floor, and wherein the ceiling is a membrane that can be moved against the floor.