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To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film havi

To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.

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1. A manufacturing method of a single crystal semiconductor film comprising the steps of: forming a single crystal semiconductor film having compression stress over a surface of a single crystal semiconductor substrate by a vapor phase epitaxial growth method;forming a first film having tensile stre

1. A manufacturing method of a single crystal semiconductor film comprising the steps of: forming a single crystal semiconductor film having compression stress over a surface of a single crystal semiconductor substrate by a vapor phase epitaxial growth method;forming a first film having tensile stress and electrical conductivity over a surface of the single crystal semiconductor film;sticking a second film over a surface of the first film having tensile stress; andseparating the single crystal semiconductor substrate and the single crystal semiconductor film from each other by a separation step in which force is applied to the single crystal semiconductor film,wherein a groove is formed in the first film and the second film before the separation step. 2. The manufacturing method of a single crystal semiconductor film according to claim 1, wherein the step of separating is performed by a separation step in which force is applied to the single crystal semiconductor film from above the second film. 3. The manufacturing method of a single crystal semiconductor film according to claim 1, wherein the method is applied to an electrode manufacturing. 4. The manufacturing method of a single crystal semiconductor film according to claim 1, further comprising: forming a metal film on the single crystal semiconductor film before forming the film having tensile stress. 5. The manufacturing method of a single crystal semiconductor film according to claim 1, wherein the method is applied to an electrode manufacturing, andwherein the electrode manufacturing further comprises the step of forming a solid electrolyte or a separator in contact with the single crystal semiconductor film after the step of separating the single crystal semiconductor substrate and the single crystal semiconductor film from each other. 6. A manufacturing method of a single crystal semiconductor film comprising the steps of: forming a single crystal semiconductor film having compression stress over a surface of a single crystal semiconductor substrate by a vapor phase epitaxial growth method;forming a thermo-setting resin film having electrical conductivity over a surface of the single crystal semiconductor film;curing the thermo-setting resin film by heating to form a thermo-setting resin film having tensile stress;sticking a film over a surface of the cured thermo-setting resin film; andseparating the single crystal semiconductor substrate and the single crystal semiconductor film from each other by a separation step in which force is applied to the single crystal semiconductor film from above the film,wherein a groove is formed in the film and the cured thermo-setting resin film before the separation step. 7. The manufacturing method of a single crystal semiconductor film according to claim 6, wherein the thermo-setting resin film is an epoxy resin film. 8. The manufacturing method of a single crystal semiconductor film according to claim 6, wherein the method is applied to an electrode manufacturing. 9. The manufacturing method of a single crystal semiconductor film according to claim 6, further comprising: forming a metal film on the single crystal semiconductor film before forming the thermo-setting resin film. 10. The manufacturing method of a single crystal semiconductor film according to claim 6, wherein the method is applied to an electrode manufacturing, andwherein the electrode manufacturing further comprises the step of forming a solid electrolyte or a separator in contact with the single crystal semiconductor film after the step of separating the single crystal semiconductor substrate and the single crystal semiconductor film from each other. 11. A manufacturing method of a single crystal semiconductor film comprising the steps of: forming a single crystal semiconductor film having compression stress over a surface of a single crystal semiconductor substrate by a vapor phase epitaxial growth method;forming a support film having electrical conductivity over a surface of the single crystal semiconductor film;curing the support film by heating to form a support film having tensile stress;sticking a film over a surface of the cured support film; andseparating the single crystal semiconductor substrate and the single crystal semiconductor film from each other by a separation step in which force is applied to the single crystal semiconductor film from above the film,wherein a groove is formed in the film and the cured support film before the separation step. 12. The manufacturing method of a single crystal semiconductor film according to claim 11, wherein the support film is a silver paste film. 13. The manufacturing method of a single crystal semiconductor film according to claim 11, wherein the support film is an indium oxide-tin oxide alloy film. 14. The manufacturing method of a single crystal semiconductor film according to claim 11, wherein the method is applied to an electrode manufacturing. 15. The manufacturing method of a single crystal semiconductor film according to claim 13, wherein the method is applied to an electrode manufacturing. 16. The manufacturing method of a single crystal semiconductor film according to claim 11, further comprising: forming a metal film on the single crystal semiconductor film before forming the support film. 17. The manufacturing method of a single crystal semiconductor film according to claim 11, wherein the method is applied to an electrode manufacturing, andwherein the electrode manufacturing further comprises the step of forming a solid electrolyte or a separator in contact with the single crystal semiconductor film after the step of separating the single crystal semiconductor substrate and the single crystal semiconductor film from each other.