Liquid crystal display device and method of manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G02F-001/1343
G02F-001/1362
G02F-001/139
H01L-027/12
G02F-001/1345
G02F-001/1368
출원번호
US-0104284
(2013-12-12)
등록번호
US-8873011
(2014-10-28)
우선권정보
JP-2000-073577 (2000-03-16)
발명자
/ 주소
Yamazaki, Shunpei
Hirakata, Yoshiharu
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
0인용 특허 :
254
초록▼
In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of
In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of a source wiring and a pixel electrode are carried out by the same photomask.
대표청구항▼
1. A liquid crystal display device comprising: a gate wiring over an insulating surface;a common wiring over the insulating surface;a first insulating film comprising silicon nitride over the gate wiring and the common wiring;a first amorphous semiconductor film over the first insulating film;a pair
1. A liquid crystal display device comprising: a gate wiring over an insulating surface;a common wiring over the insulating surface;a first insulating film comprising silicon nitride over the gate wiring and the common wiring;a first amorphous semiconductor film over the first insulating film;a pair of second amorphous semiconductor films over the first amorphous semiconductor film;a source wiring over one of the pair of second amorphous semiconductor films;a second insulating film comprising silicon nitride over the source wiring;a common electrode electrically connected to the common wiring;a transparent electrode electrically connected to the other of the pair of second amorphous semiconductor films;an alignment film over the transparent electrode and the common electrode; anda liquid crystal over the alignment film,wherein the source wiring overlaps the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films,wherein the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films extend along the source wiring,wherein the second insulating film is in contact with the first amorphous semiconductor film and the pair of second amorphous semiconductor films in a region overlapping the gate wiring,wherein the transparent electrode overlaps the common wiring, andwherein the source wiring overlaps the gate wiring and the common wiring. 2. The liquid crystal display device according to claim 1, wherein the common electrode is formed in a same layer as the common wiring. 3. The liquid crystal display device according to claim 1, wherein the gate wiring and the common wiring are formed by patterning a conductive layer. 4. The liquid crystal display device according to claim 1, wherein the gate wiring comprises an element selected from the group consisting of Al, Cu, Ti, Mo, W, Ta, Nd, and Cr, and an alloy of the elements. 5. The liquid crystal display device according to claim 1, wherein the transparent electrode and the common electrode are disposed so that an orientation of the liquid crystal is controlled by an electric field produced between the transparent electrode and the common electrode. 6. A liquid crystal display device comprising: a gate wiring over an insulating surface;a common wiring over the insulating surface;a first insulating film comprising silicon nitride over the gate wiring and the common wiring;a first amorphous semiconductor film over the first insulating film;a pair of second amorphous semiconductor films over the first amorphous semiconductor film;a source wiring over one of the pair of second amorphous semiconductor films;a second insulating film comprising silicon nitride over the source wiring;a common electrode electrically connected to the common wiring;a transparent electrode electrically connected to the other of the pair of second amorphous semiconductor films;an alignment film over the transparent electrode and the common electrode;a liquid crystal over the alignment film; anda terminal portion comprising a conductive layer formed of a same layer as the transparent electrode,wherein the source wiring overlaps the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films,wherein the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films extend along the source wiring,wherein the second insulating film is in contact with the first amorphous semiconductor film and the pair of second amorphous semiconductor films in a region overlapping the gate wiring,wherein the transparent electrode overlaps the common wiring, andwherein the source wiring overlaps the gate wiring and the common wiring. 7. The liquid crystal display device according to claim 6, wherein the common electrode is formed in a same layer as the common wiring. 8. The liquid crystal display device according to claim 6, wherein the gate wiring and the common wiring are formed by patterning a second conductive layer. 9. The liquid crystal display device according to claim 6, wherein the gate wiring comprises an element selected from the group consisting of Al, Cu, Ti, Mo, W, Ta, Nd, and Cr, and an alloy of the elements. 10. The liquid crystal display device according to claim 6, wherein the transparent electrode and the common electrode are disposed so that an orientation of the liquid crystal is controlled by an electric field produced between the transparent electrode and the common electrode. 11. A liquid crystal display device comprising: a gate wiring over an insulating surface;a common wiring over the insulating surface;a first insulating film over the gate wiring and the common wiring;a first amorphous semiconductor film over the first insulating film;a pair of second amorphous semiconductor films over the first amorphous semiconductor film;a source wiring over one of the pair of second amorphous semiconductor films;a second insulating film over the source wiring;a common electrode electrically connected to the common wiring;a transparent electrode electrically connected to the other of the pair of second amorphous semiconductor films;an alignment film over the transparent electrode and the common electrode;a liquid crystal over the alignment film; anda terminal portion comprising a conductive layer formed of a same layer as the transparent electrode,wherein the source wiring overlaps the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films,wherein the first amorphous semiconductor film and one of the pair of second amorphous semiconductor films extend along the source wiring,wherein the second insulating film is in contact with the first amorphous semiconductor film and the pair of second amorphous semiconductor films in a region overlapping the gate wiring,wherein the transparent electrode overlaps the common wiring, andwherein the source wiring overlaps the gate wiring and the common wiring. 12. The liquid crystal display device according to claim 11, wherein the common electrode is formed in a same layer as the common wiring. 13. The liquid crystal display device according to claim 11, wherein the gate wiring and the common wiring are formed by patterning a second conductive layer. 14. The liquid crystal display device according to claim 11, wherein the gate wiring comprises an element selected from the group consisting of Al, Cu, Ti, Mo, W, Ta, Nd, and Cr, and an alloy of the elements. 15. The liquid crystal display device according to claim 11, wherein the transparent electrode and the common electrode are disposed so that an orientation of the liquid crystal is controlled by an electric field produced between the transparent electrode and the common electrode.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (254)
Ono Kikuo (Naka-machi JPX) Tsumura Makoto (Hitachi JPX) Ogawa Kazuhiro (Mobara JPX) Sakuta Hiroki (Mobara JPX) Suzuki Masahiko (Mobara JPX) Kaneko Toshiki (Chiba JPX) Nakayoshi Yoshiaki (Mobara JPX) , Active matrix crystal display apparatus using thin film transistor.
Park Jae-Yong,KRX ; Lee Jae-Kyun,KRX ; Kim Jung-Hoan,KRX ; Lyu Ki-Hyun,KRX ; Lee Kyu-Hyun,KRX, Active matrix liquid crystal display and related method.
Nishiki Hirohiko,JPX ; Shimada Takayuki,JPX ; Katayama Mikio,JPX, Active matrix substrate and display device using the same with extending protrusions between gate and source line termin.
Kawai Katsuhiro,JPX ; Yamakawa Shinya,JPX ; Okamoto Masaya,JPX ; Katayama Mikio,JPX, Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same.
Yasushi Kubota JP; Ichiro Shiraki JP; Tamotsu Sakai JP, Active matrix type liquid crystal display device using driver circuits which latch-in data during horizontal blanking period.
Nagae Nobukazu,JPX ; Yamada Nobuaki,JPX ; Terashita Shinichi,JPX ; Kozaki Shuichi,JPX, Axisymmetrically oriented liquid crystal display device with concave portion defined by the second derivative.
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Display device and method of fabricating involving peeling circuits from one substrate and mounting on other.
Dohjo Masayuki (Yokohama JPX) Oana Yasuhisa (Yokohama JPX) Ikeda Mitsushi (Yokohama JPX), Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display d.
Hiroki Masaaki,JPX ; Teramoto Satoshi,JPX ; Nishi Takeshi,JPX ; Yamazaki Shunpei,JPX, In plane switching LCD with 3 electrode on bottom substrate and 1 on top substrate.
Yamagishi Shinji,JPX ; Shinomiya Tokihiko,JPX ; Fujimori Kohichi,JPX ; Nishiguchi Kenji,JPX, LCD and method for producing the same in which a larger number of substrate gap control materials is larger in the poly.
Fujimori Kohichi,JPX ; Shinomiya Tokihiko,JPX ; Inou Ippei,JPX ; Kozaki Shuichi,JPX, LCD device having an input function and polymer substrates having dual function.
Shimizu Michio,JPX ; Konuma Toshimitsu,JPX ; Nishi Takeshi,JPX, LCD polymerized column spacer formed on a modified substrate, from an acrylic resin, on a surface having hydrophilic an.
Shindo Hitoshi (Isehara JPX) Nakayama Jun (Atsugi JPX), Liquid crystal device and method for producing the same with metal spacer in hole of thin film device\s insulator.
Mitsui Seiichi (Nara JPX) Nakamura Hisakazu (Tenri JPX) Shimada Yasunori (Nara JPX) Taniguchi Koji (Tenri JPX) Tanaka Hirohisa (Ikoma JPX) Kimura Naofumi (Nara JPX), Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and ra.
Hatano Takuji,JPX ; Okada Masakazu,JPX, Liquid crystal device with composite layer of cured resin pillars and liquid crystal phase and method of producing the same.
Kawamoto Satoru (Amagasaki JPX) Nakagawa Noaki (Amagasaki JPX) Hayama Masahiro (Amagasaki JPX), Liquid crystal display apparatus having a series combination of the storage capacitors.
Ikeda, Masahiro; Sawasaki, Manabu; Taniguchi, Yoji; Inoue, Hiroyasu; Tanose, Tomonori; Tanaka, Yoshinori, Liquid crystal display device and method of manufacturing the same without scattering spacers.
Suzuki Masahiko,JPX ; Isono Tsutomu,JPX ; Ohgiichi Kimitoshi,JPX ; Ishii Akira,JPX ; Ohwada Jun-ichi,JPX, Liquid crystal display device having a shielding film for shielding light from a light source.
Etsuko Nishimura JP; Genshiro Kawachi JP; Kenichi Onisawa JP; Kenichi Chahara JP; Takeshi Sato JP; Katsumi Tamura JP, Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component.
Hirakata Yoshiharu,JPX ; Yamazaki Shunpei,JPX, Liquid crystal display device with an adjustment layer not connected to driving circuit to even out height difference in the sealant region.
Onishi Noriaki,JPX ; Yamada Nobuaki,JPX, Liquid crystal display device with at least 7.degree. C. liquid crystal to isotropic phase transition temperature differ.
Matsumoto Seiichi,JPX ; Sukegawa Osamu,JPX ; Kaneko Wakahiko,JPX ; Ihara Hirofumi,JPX, Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode.
Hong, Mun-Pyo; Park, Woon-Yong; Yoon, Jong-Soo, Method for manufacturing thin film transistor array panel for LCD having a quadruple layer by a second photolithography process.
Mase Akira (Aichi JPX) Nemoto Hideki (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Method of electrically connecting an integrated circuit to an electric device.
Ukita Tooru,JPX ; Koide Shin,JPX, Method of fabricating a reflection type liquid crystal display in which the surface of a substrate is roughened, a metal film is formed on the roughened surface, and a non-polarizing, transparent die.
den Boer Willem ; Zhong John Z. Z. ; Gu Tieer ; Byun Young H. ; Aggas Steven, Method of making a large area imager with improved signal-to-noise ratio.
Kwasnick Robert F. (Schenectady NY) Possin George E. (Schenectady NY) Holden David E. (Grenoble NY FRX) Saia Richard J. (Schenectady NY), Method of making a thin film transistor structure with improved source/drain contacts.
Oh Young Jin,KRX ; Kim Yong Beom,KRX ; Moon Jeong Min,KRX, Method of manufacturing a reflector comprising steps forming beads and polymer layer separately.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX, Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed there.
Lyu Chun-Gi,KRX ; Hong Mun-Pyo,KRX ; Kim Sang-Gab,KRX, Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon.
Tsuda Kazuhiko,JPX ; Taniguchi Koji,JPX ; Shiomi Makoto,JPX, Reflector, reflective liquid crystal display incorporating the same and method for fabricating the same.
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device.
Shui-Chih A. Lien ; Shuhichi Odahara JP; Yukito Saitoh JP, Wide viewing angle liquid crystal with ridge/slit pretilt, post spacer and dam structures and method for fabricating same.
Jeong Jong-In,KRX ; Jeong Cheol-Su,KRX ; Park Dae-Won,KRX ; Lee Chul-Yong,KRX ; Kwon Chul-Ho,KRX, Wiring using chromium nitride and methods of fabrication therefor, liquid crystal display panels using the same wiring.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.