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A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles

A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).

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1. A plasma processing system comprising: a plasma processing chamber including a plurality of continuous flow shower-head orifices;plural pulsed high-pressure injectors interspersed between the plurality of continuous flow shower-head orifices;said plural pulsed high-pressure injectors each being s

1. A plasma processing system comprising: a plasma processing chamber including a plurality of continuous flow shower-head orifices;plural pulsed high-pressure injectors interspersed between the plurality of continuous flow shower-head orifices;said plural pulsed high-pressure injectors each being separately connected to a gas feed line;said plurality of continuous flow shower-head orifices being connected to a common volume;at least one continuous flow gas valve configured to provide a first gas to the chamber via the common volume and the continuous flow shower head orifices;at least one pulsed gas valve configured to provide a second gas to the chamber via at least one of the gas feed lines and its respective pressure injector; anda controller coupled to each gas valve and programmed to cause the continuous flow gas valve to provide the first gas in a continuous flow having a flow rate of 100-500 sccm and to cause the pulsed gas valve to provide the second gas in a pulsed flow, each pulse having a flow rate of 1,000-10,000 sccm such that, during each pulse, gas transport adjacent to a surface of a substrate being processed affects at least one of an increase in local number density of adatoms, or an increase in probability of adatoms moving in a direction normal to the surface, to improve processing within high aspect ratio features in the substrate. 2. The plasma processing chamber as claimed in claim 1, wherein the plural pulsed high-pressure injectors further comprise: a continuous diameter upper neck portion; anda conically divergent pressure restraining exit portion with increasing diameter for distributing at least one processing gas into said plasma processing chamber. 3. The plasma processing chamber as claimed in claim 1, wherein said each pulsed high-pressure injector has a concave shaped exit portion. 4. The plasma processing chamber as claimed in claim 1, wherein the continuous flow shower-head gas injectors produce a continuous flow of a mixture of processing gases and inert gases. 5. The plasma processing chamber as claimed in claim 1, wherein the plural pulsed high-pressure injectors comprise nozzles injecting gas on the order of 1000 to 5000 sccm. 6. The plasma processing chamber as claimed in claim 1, wherein short high-pressure pulses temporarily direct gas flow normal to the plasma surface resulting in increased pressure within a thin layer adjacent to the said plasma surface. 7. The plasma processing chamber as claimed in claim 1, wherein, said short high-pressure injections increase the number of adatoms at said wafer surface and increase probability of finding a specific adatom moving in a direction normal to said surface; improving deposition and etch process performance. 8. The plasma processing chamber as claimed in claim 1, further comprising: a substrate holder;a focus ring;a pressure manometer;a shield ring; andan array of pneumatically activated valves for connecting at least one measurement site to the pressure manometer. 9. The plasma processing chamber as claimed in claim 8, further comprising a computer for receiving an output of the pressure manometer for controlling a process of the plasma process chamber. 10. The plasma processing chamber as claimed in claim 9, wherein the computer further comprises software for controlling at least one of a pulse duration, a pulse repetition rate, and a pulse amass flow rate of at least one of the continuous flow shower-head orifices and the plural pulsed high-pressure injectors. 11. The plasma processing chamber of claim 1, wherein said plural pulsed high-pressure injectors each have a first orifice structure and said plurality of continuous flow shower-head orifices each have a second structure different from the first structure. 12. The plasma processing chamber of claim 11, wherein said first structure includes a conically divergent exit portion, and said second structure is a cylindrical structure. 13. The plasma processing chamber of claim 1, wherein said plural pulsed high pressure injectors are connected to a common pulsed gas valve. 14. The plasma processing system of claim 1, wherein said controller is further programmed to cause the pulsed gas valve to pulse the flow of second gas at a pulse duration of less than 1 ms and a pulse rate of greater than 1 kHz. 15. A method for supplying at least one gas to a plasma-processing chamber, the method comprising the steps of: injecting a first gas continuously from a continuous shower-head orifice at a gas flow rate of between 100-500 sccm;pulsing a second gas cyclically from pulsed high-pressure injectors at a cyclical flow rate of 1,000-10,000 sccm such that, during each pulse, gas transport adjacent to a surface of a substrate being processed affects at least one of an increase in local number density of adatoms, or an increase in probability of adatoms moving in a direction normal to the surface, to improve processing within high aspect ratio features in the substrate; andprocessing a substrate in the plasma processing chamber in a presence of the continuously injected gas and the pulsed gas. 16. The method as claimed in claim 15, further comprising: measuring a pressure above the substrate surface at plural measurement sites; andprocessing the measured pressure in a computer to control at least one of a pulse duration, a pulse repetition rate, and a pulse mass flow rate of at least one of the injecting and pulsing steps. 17. The method as claimed in claim 15, further comprising the step of creating a high-pressure area in an area adjacent to the substrate in synchronization with the pulsing step. 18. The method as claimed in claim 15, wherein the step of injecting the gas comprises injecting a combination of plural gases. 19. The method as claimed in claim 15, wherein the step of processing comprises at least one of: (1) etching a surface of the substrate and (2) depositing on a surface of the substrate. 20. The method of claim 15 wherein said injecting comprises injecting a gas continuously from a continuous shower-head orifice without substantially constraining a rate of expansion of the continuous gas; and said pulsing comprises pulsing a gas cyclically from pulsed high pressure injectors while constraining a rate of expansion of the pulse gas. 21. The method of claim 15, wherein said pulsing the second gas comprises pulsing the second gas at a cyclical flow rate of 1,000-5,000 sccm. 22. The method of claim 15, wherein said pulsing the second gas comprises pulsing the second gas at a pulse duration of less than 1 ms and a pulse rate of greater than 1 kHz.