Multiple optical wavelength interferometric testing methods for the development and evaluation of subwavelength sized features within semiconductor devices and materials, wafers, and monitoring all phases of development and manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01B-011/02
G01B-009/02
G01N-021/95
G01N-021/17
H01L-021/66
G01N-021/23
G01B-011/24
출원번호
US-0903232
(2013-05-28)
등록번호
US-8879071
(2014-11-04)
발명자
/ 주소
Pfaff, Paul L.
출원인 / 주소
Attofemto, Inc.
대리인 / 주소
Davis Wright Tremaine LLP
인용정보
피인용 횟수 :
2인용 특허 :
101
초록▼
Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems an
Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices. Electronic analysis of holographic interference patterns of varying optical probing wavelengths determines and permits the display of internal and external stresses and the various effects of such stresses acting upon the operating characteristics of semiconductor devices, features, interior structures at any stage of development or manufacture.
대표청구항▼
1. A method for developing and evaluating semiconductor devices or wafers for manufacture by optical interferometric testing and displaying internal stresses of semiconductor devices or wafers and for testing semiconductor devices or wafers while being manufactured, the device or wafer under test be
1. A method for developing and evaluating semiconductor devices or wafers for manufacture by optical interferometric testing and displaying internal stresses of semiconductor devices or wafers and for testing semiconductor devices or wafers while being manufactured, the device or wafer under test being comprised a semiconductor conductor material having an interior surface and interior structures, comprising: using a holographic optical interference system with at least one light source,providing at least one light beam of coherent wavelength with a wavelength to which the semiconductor material is at least semi-transparent or transparent,splitting the light beam into a pair of beams, comprising a reference beam and an object beam,imposing and adjusting the polarization of the object beam on the exterior surface of the semiconductor material to generate a reflected object beam reflected having a polarization from the interior structures of the semiconductor material and interior surfaces of the semiconductor material to generate a reflected polarized beam reflected from the interior structures of the semiconductor material,adjusting at least one of the following attributes of the angle of incidence or polarization or the length of the converging or diverging optical pathway of the reference beam relative to the object beam between one or more angles with the semiconductor material being in one or more states for each angle of the reference beam, or adjusting at least one of said attributes of the object beam relative to the reference beam,imposing the reflected object beam and the reference beam onto one or more detection devices to create a plurality of interference or interferometric patterns of the reflected object beam with the reflected reference beam, one interference or interferometric pattern at each of the plurality of angles of the reference beam,varying the magnification or optical pathway of the reference beam relative to the magnification of the object beam,using one or more detection devices to physically record or digitally store the plurality of interference or interferometric patterns of one or more infrared or thermal wavelengths,comparing the plurality of interference or interferometric patterns to one another to determine and display stress or the effects of such stress and interior structure characteristics within the semiconductor material, device or wafer, andusing the plurality of interference or interferometric patterns comprising of the interference of one or more differing infrared or thermal wavelengths to perform at least one of the following: (1) test, shape or determine semiconductor materials, devices, wafers or interior structures,(2) evaluate internal processes in semiconductor materials, devices or wafers,(3) test integrated circuits, devices or materials,(4) determine the effects of electromagnetic signals that act upon or within the semiconductor wafers, dielectric materials, conductors, and within materials adjacent to, the feature, devices or processes, or(5) determine the effects of energies or signals acting upon or within the semiconductor materials, dielectric materials, conductors, and within materials adjacent to, devices or wafers. 2. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of the external stress being produced by imposing incident electric or electromagnetic field or signals upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 3. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of the external stress being produced by imposing incident voltages or chemical solutions upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 4. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of the external stress being produced by imposing incident radio waves upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 5. The method of claim 1, wherein at least one or more detector devices records a plurality of interference patterns of a plurality of one or more external stresses or the effects of the external stresses which produce a change in the state of the refractive indexes or birefringence states upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 6. The method of claim 5, wherein at least one of the states of the semiconductor material is a plurality of one or more external stresses or the effects of the external stresses produced by imposing a plurality of electromagnetic radiation stresses or the effects of the external stresses of one or more beams of differing wavelengths shorter than the characteristic threshold upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 7. The method of claim 5, wherein at least one of the states of the semiconductor material is an external stress or the effects of the external stress detected or displayed by means of triggering the recording or storage device of a plurality of interference patterns in synchrony with the imposition of a plurality of one or more external or internal stresses or the effects of said stresses or electromagnetic signals or the effects of the electromagnetic signals or external stresses acting upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 8. The method of claim 7, wherein one or more recording devices simultaneously detect or display the plurality of interference or interferometric patterns of one or more external or internal stresses or signals. 9. The method of claim 5, wherein one or more beams incident to the semiconductor material, device or wafer and the interference or interferometric pattern of each beam are recorded or detected or displayed by one or more recording or detector devices. 10. The method of claim 9, wherein the interference or interferometric pattern of one or more beams are recorded independently of each other and combined together to enhance and display the visibility or contrast of the interference pattern with respect to a feature of at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 11. The method of claim 1, wherein the magnification or length of the optical pathway of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference or interferometric pattern with respect to a feature of at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 12. The method of claim 1, wherein the angles or polarization of the reference beam are adjusted to be converging or diverging to the polarization of the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 13. The method of claim 12, wherein automatic digital signal or image processing displays the plurality of one or more infrared or thermal image detection devices simultaneously monitoring at least one of the differing probing beams comprising the interference of one or more wavelengths for at least one of the following: the feature, interior surface or an interior structure or within the area adjacent to such. 14. The method of claim 12, wherein automatic digital signal or image processing processes the plurality of interference or interferometric patterns and displays the plurality of internal stresses or the effects of such internal stresses within or adjacent to at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, interior structure or wafer at a desired stage of development or manufacture. 15. The method of claim 12, wherein the detection device records or digitally stores changes in the plurality of interference or interferometric patterns for at least of one of the differing probing beams comprising the interference of one or more wavelengths to characterize and display at least one of the following: an internal stress, a signal, the effects of the internal stress, the internal effects of a signal, or the external effects of a signal or stress, or the effects of the stress or stresses adjacent to the area of the stress or feature. 16. The method of claim 12, wherein the plurality of one or more interference or interferometric patterns are compared by digital signal or image processing with an electronic circuit coordinate map to determine and display at least one internal stress or the effects of the internal stress of a feature or the interior surface or structures or external stress or stresses or the effects of the external stress or stresses or signals acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 17. The method of claim 16, wherein the comparison of one or more interference or interferometric patterns displays at least one of the following: the internal stresses, the effects of one or more internal stresses, the effect of electromagnetic signals or operating characteristics of features within the feature, interior structures or internal surfaces of at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 18. The method of claim 16, wherein by recording or comparing the interference or interferometric pattern of at least one or more stresses or the effects of said stresses or signals acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer, the interferometric pattern or patterns of differing stress states is determined or displayed. 19. The method of claim 16, wherein by recording at least one or more interference or interferometric patterns of at least one or a plurality of internal stresses or the effects of said stresses recorded at one or more different angles or polarizations, for the same object beam, a plurality of interference or interferometric patterns is obtained or displayed of at least one or a plurality of internal stresses or the effects of the internal stresses or signals within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 20. The method of claim 19, wherein analysis of the plurality of interference or interferometric patterns detected or recorded at different angles or varying optical pathways generates two-dimensional or three-dimensional information of at least one internal stress or signal acting upon an exterior surface or interior structure or feature within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 21. The method of claim 20, wherein analysis of the plurality of interference or interferometric patterns detected or recorded at different magnifications or polarizations or optical pathways for at least one angle generates two-dimensional or three-dimensional information of at least one internal stress or signal or the effects of the internal stress or signal acting upon an exterior surface or interior structure or feature within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 22. The method of claim 1, wherein the diameter of the object beam is selected to produce a spatial region on the exterior surface of the semiconductor material equal to or larger than the focal or spot size of a single wavelength of the object beam. 23. The method of claim 1, wherein at least one or more detection devices physically records or digitally stores the plurality of interference or interferometric patterns. 24. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress or signal, the external stress or the effects of said stress or signals being produced by imposing incident radio waves acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 25. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress or signal, the external stress or the effects of said stress or signals being produced by imposing incident x-rays acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 26. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress or signal, the external stress or the effects of the external stress or signals being produced by incident magnetic fields acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 27. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of the external stress being produced by incident chemical solutions acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 28. The method of claim 1, wherein the magnification or polarization or length of the optical pathway of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference or interferometric pattern with respect to a feature of the semiconductor material, device or wafer, and wherein automatic digital signal or image processing displays the plurality of one or more image detection devices simultaneously monitoring the feature or internal surface or the effects of signals upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 29. The method of claim 1, wherein the magnification or polarization or length of the optical pathway of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference or interferometric pattern with respect to a feature of the semiconductor material, device or wafer, and wherein automatic digital signal or image processing processes the plurality of interference patterns and displays the plurality of internal stresses or the effects of the internal stresses or signals within the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device, wafer or feature at a desired stage of development or manufacture. 30. The method of claim 1, wherein the magnification or polarization or length of the optical pathway of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material, device or wafer, and wherein the detection device records or digitally stores changes in the plurality of interference or interferometric patterns to characterize and display at least one internal stress or the effects of the internal stress, or display and characterize one signal and the effects of the signal. 31. The method of claim 1, wherein the magnification or polarization or length of the optical pathway of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference or interferometric pattern with respect to a feature of the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer, and wherein the interference or interferometric patterns are compared by digital signal or image processing with an electronic circuit coordinate map to determine and display at least one internal stress or the effects of the internal stress of a feature or an interior surface or structures within the semiconductor material or external stress or stresses or signals acting upon at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 32. The method of claim 1, wherein the diameter of the focal or spot size of the wavelength of the reference-beam is selected to produce an interference or interferometric pattern within the-spatial region on the exterior surface of the semiconductor material equal to, smaller than, or larger than the focal or spot size of the wavelength of the object beam. 33. The method of claim 1, wherein the diameter of the focal or spot size of the wavelength of the reference-beam is smaller than, or equal to, or larger than the object beam and is selected to produce an photo-carrier induced interference or interferometric pattern within the-spatial region on the exterior surface of the semiconductor material equal to, smaller than, or larger than the focal or spot size of the wavelength of the object beam. 34. A method for developing and evaluating semiconductor devices or wafers for manufacture by optical interferometric testing and displaying internal stresses of semiconductor devices or wafers, or testing semiconductor devices or wafers while being manufactured, the device or wafer under test being comprised of a semiconductor material having an exterior surface and interior structures, using an optical interferometric system with at least one light source providing at least one light beam of coherent wavelength with a wavelength to which the semiconductor material is at least semi-transparent or transparent, the method comprising, imposing and adjusting the polarization of the object beam on the exterior surface of the semiconductor material to generate a reflected object beam having a polarization from the interior structures of the semiconductor material and interior surfaces of the semiconductor material to generate a reflected polarized beam from the interior surfaces of the semiconductor material,adjusting the angle or length of the optical pathway of a converging or diverging reference beam relative to an object beam between a plurality of angles with the semiconductor material being at least one state for each angle of the reference beam, or adjusting said attributes of the object beam relative to the reference beam,imposing the reflected object beam and the reference beam onto one or more detection devices to create a plurality of interference or interferometric patterns of the reflected object beam with the reference beam, at least one at each of the plurality of angles or polarizations of the reference beam,comparing the plurality of interference or interferometric patterns to one another at one or more infrared or thermal wavelengths, or a combination thereof, to determine characteristics within the semiconductor material, device or wafer, andusing the plurality of interference or interferometric patterns to perform at least one of the following: (1) test, shape or determine the semiconductor materials, devices, wafers or interior structures,(2) evaluate internal processes in semiconductor materials, devices or wafers,(3) test integrated circuits, devices, materials or electromagnetic signals that act upon or within the semiconductor materials, wafers, devices or processes, or(4) determine effects of stresses, energies or signals acting upon at least one of the following: the semiconductor materials, dielectric materials, conductors, and within materials adjacent to, the feature, devices and wafers. 35. A method for optical interferometric testing and displaying internal stresses of at least one of the following: a semiconductor material, a semiconductor device, a wafer while being developed and evaluated or manufactured, or displaying the effects of signals acting upon the device or wafer under test being comprised of a semiconductor material having an exterior surface and interior structures, using a holographic optical interference system with at least one light source providing at least one light beam of coherent wavelength with a wavelength to which the semiconductor material is at least semi-transparent or transparent, the method comprising, imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam from the interior structures of the semiconductor material and interior surfaces of the semiconductor material to generate a reflected beam from the interior surfaces of the semiconductor material,adjusting the angle or optical pathway length of a reference beam relative to an object beam between a plurality of angles with the semiconductor material being in at least one state for each angle of the reference beam, or adjusting said attributes of the object beam relative to the reference beam,imposing the reflected object beam and the reference beam onto one or more detection devices to create or record a plurality of interference or interferometric patterns of the reflected object beam with the reference beam, one at each of the plurality of angles of the reference beam,comparing the plurality of live or recorded interference or interferometric patterns to one another to determine at least one characteristic within the semiconductor material, andusing the plurality of interference or interferometric patterns of one or of differing infrared or thermal wavelengths to perform at least one of the following: (1) test, shape or determine the semiconductor materials, devices, wafers or interior structures,(2) evaluate at least one internal process in at least one of the following: the semiconductor material, device or wafer,(3) test at least one of the following: an integrated circuit, a device, a material, an electromagnetic signal acting upon or within the semiconductor material, wafer, device, the effects of processes upon such, or(4) determine the effects of such energies or stresses or signals acting upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer. 36. A method for developing and evaluating semiconductor devices or wafers for manufacture by optical interferometric testing at least one of the following: a semiconductor device or wafer while being developed and evaluated or manufactured, or displaying the effects of signals acting upon the device or wafer under test being comprised of a semiconductor material having an exterior surface and interior structures, comprising: using a holographic optical interference system with at least one light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is semi-transparent or transparent,splitting the light beam into a pair of beams comprising of a reference beam and an object beam, imposing or adjusting the polarization the object beam on the exterior surface of the semiconductor material to generate a reflected or polarized object beam reflected from the interior structures of the semiconductor material,adjusting the polarization or the angle of incidence of the converging or diverging length of the optical pathway of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being in at least one state for each angle of the reference beam, or adjusting said attributes of the object beam relative to the reference beam,imposing the reflected object beam and the reference beam onto one or more detection devices to create or record a plurality of interference or interferometric patterns of the reflected object beam with the reference beam, one at each of the plurality of angles or polarization of the reference beam,comparing the plurality of interference or interferometric patterns to one another to determine characteristics within the semiconductor device or material,using the plurality of live or recorded interference or interferometric patterns of one or more infrared or thermal wavelengths to perform at least one of the following: (1) test, shape or determine semiconductor materials, devices, wafers and interior structures,(2) evaluate internal processes or stresses,(3) test the effects of such stresses acting upon or within semiconductor materials, devices or wafers,(4) test integrated circuits, devices, materials or electromagnetic signals that act upon or within the semiconductor materials, devices, wafers or processes, or(5) determine the effects of one or more stresses, energies or signals acting upon or within at least one of the following: the semiconductor material, dielectric materials, conductors, and within materials adjacent to, the feature, device or wafer.
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