초록 ▼

A roller for producing optical films is disclosed. The roller includes a cylindrical main body and a micro-structured layer surrounding a circumferential surface of the main body. The microstructure layer includes a number of microstructures on its surface away from the main body. The microstructure

A roller for producing optical films is disclosed. The roller includes a cylindrical main body and a micro-structured layer surrounding a circumferential surface of the main body. The microstructure layer includes a number of microstructures on its surface away from the main body. The microstructure layer is made from ethylene tetrafluoroethylene.

대표청구항 ▼

1. A method for making an roller, comprising: providing a substrate;forming an aluminum film on a surface of the substrate;anodizing the aluminum film to form a plurality of first microstructures by immersing the substrate with the aluminum film in an electrolytic oxidation solution and applying a v

1. A method for making an roller, comprising: providing a substrate;forming an aluminum film on a surface of the substrate;anodizing the aluminum film to form a plurality of first microstructures by immersing the substrate with the aluminum film in an electrolytic oxidation solution and applying a voltage to the electrolytic oxidation solution;enlarging the first microstructures to form a plurality of cone-shaped second microstructures by dipping the substrate which has been anodized in a phosphoric acid solution and applying a voltage to the phosphoric acid solution;transferring the cone-shaped second microstructures on a surface of a metal molding plate;molding a micro-structured layer using the metal molding plate, the metal molding plate printing a plurality of third microstructures corresponding to the cone-shaped second microstructures; andattaching the micro-structured layer on a circumferential surface of a cylindrical main body, with the third microstructures of the micro-structured layer protruding away from the main body. 2. The method of claim 1, wherein the substrate is made from metal or monocrystaline silicon. 3. The method of claim 1, wherein the electrolyte is selected from the group consisting of sulfuric acid solution, phosphoric acid solution and oxalic acid solution. 4. The method of claim 1, wherein the electrolyte is oxalic acid solution, a concentration of the electrolyte is in a range of 0.1-1 mol/liter, a temperature of the electrolyte is controlled in a range of 5-25° C., a voltage is controlled in a range of 40-60V, and an anodizing time is controlled in a range of 10-50 minutes. 5. The method of claim 4, wherein the concentration of the oxalic acid solution is 0.3 mol/liter, the temperature of the electrolyte is 17° C., and the voltage is 40V. 6. The method of claim 1, wherein a mass percent concentration of the phosphoric acid solution is 5%, a temperature of the phosphoric acid solution is 30° C., and the microstructures are enlarged for 8 minutes one time. 7. The method of claim 1, wherein the second microstructures are transferred on the metal molding plate by an electrotypist method. 8. The method of claim 7, wherein the electrotypist comprises: dipping the enlarge processed substrate and an electrotype metal plate into an electrolyte, the electrotype plate being connected to an anode, and the substrate being connected to an cathode;applying a current to the electrolyte to generate an electrolytic action;depositing an electrotype metal layer on a surface of the alumina coating under the electrolytic action for a predetermined thickness;taking the substrate out of the electrolyte; anddipping the substrate into an etching solution to dissolve the alumina coating to divide the electrotype metal layer from the substrate. 9. The method of claim 8, wherein a material of the metal molding plate is nickel. 10. The method of claim 1, wherein the micro-structured layer is molded by steps: putting an ETFE film on a surface of the metal molding plate with the second microstructures;putting the metal molding plate with the ETFE film into a hot stamping machine;heating the ETFE film to be semi-meltedapplying a pressure on the ETFE film and keeping the pressure for 5-10 minutes;cooling the ETFE film while still under the pressure. 11. The method of claim 10, wherein a temperature for heating the ETFE film is 200° C.