Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05H-001/24
C23C-016/40
C01B-013/11
C23C-016/455
C23C-016/52
출원번호
US-0854818
(2010-08-11)
등록번호
US-8883270
(2014-11-11)
발명자
/ 주소
Shero, Eric
Raisanen, Petri I.
Jung, Sung Hoon
Wang, Chang-Gong
출원인 / 주소
ASM America, Inc.
대리인 / 주소
Snell & Wilmer LLP
인용정보
피인용 횟수 :
81인용 특허 :
126
초록▼
Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate
Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
대표청구항▼
1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising: exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas thereaf
1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising: exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas thereafter;forming active NxOy species;introducing the active NxOy species to a reaction chamber;exposing the substrate to an oxidizer comprising an oxidant gas and the active NxOy species for an oxidation pulse interval then removing the oxidizer thereafter to thereby increase a film deposition rate and a film deposition uniformity; andprior to introducing the active NxOy species to the reaction chamber, monitoring the active NxOy species using a sensor and adjusting one or more process parameters based on the monitoring. 2. The method of claim 1 wherein the precursor gas comprises a rare earth metal selected from the group consisting of Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and combinations thereof. 3. The method of claim 1 wherein the precursor gas comprises at least one of an organo-metallic and a metal halide compound. 4. The method of claim 1 wherein the precursor gas comprises at least one of: hafnium tetrachloride (HfCl4);titanium tetrachloride (TiCl4);tantalum pentachloride (TaCl5);tantalum pentafluoride (TaF5);zirkonium tetrachloride (ZrCl4);rare earth betadiketonate compounds including (La(THD)3) and (Y(THD)3);rare earth cyclopentadienyl (Cp) compounds including La(iPrCp)3;rare earth amidinate compounds including lanthanum tris-formamidinate La(FAMD)3;cyclooctadienyl compounds including rare earth metals;alkylamido compounds including: tetrakis-ethyl-methylamino hafnium (TEMAHf);tetrakis (diethylamino) hafnium ((Et2N)4Hf or TDEAH); andtetrakis (dimethylamino) hafnium ((Me2N)4Hf or TDMAH);alkoxides;halide compounds of silicon;silicon tetrachloride;silicon tetrafluoride; andsilicon tetraiodide. 5. The method of claim 1 wherein the oxidant gas is a nitrogen-containing species gas. 6. The method of claim 1 wherein the active NxOy species comprise activated ionic or radical species including at least one of NO*, N2O*, NO2*, NO3*, and N2O5*. 7. The method of claim 1 wherein the oxidant gas comprises ozone and one or more gasses selected from the group consisting of O, O2, NO, N2O, NO2, NO3, N2O5, an NxOy radical species, an NxOy ionic species, and combinations thereof. 8. The method of claim 7 wherein the oxidant gas comprises approximately 5 atomic percent to 25 atomic percent O3. 9. The method of claim 7 wherein O3 is produced from O2 and a nitrogen source gas wherein a mixture of the O2 and nitrogen source gas is subjected to a plasma discharge. 10. The method of claim 9 wherein the nitrogen source gas is at least one of N2, NO, N2O, NO2, NO3, and N2O5. 11. The method of claim 10 wherein flow ratio of N2/O2 is >0.001. 12. The method of claim 10 wherein the ratio of the O2 and the nitrogen source gas determine at least one of: an amount of the active NxOy species comprising activated ionic or radical species including at least one of NO*, N2O*, NO2*, NO3*, and N2O5*;a concentration of the active NxOy species comprising activated ionic or radical species including at least one of NO*, N2O*, NO2*, NO3*, and N2O5*;a growth rate of the deposited film;a film uniformity across the substrate;a dielectric constant of the deposited film;an index of refraction of the deposited film; anda molecular composition of the deposited film. 13. The method of claim 10 wherein a power input controls the plasma, and an amount of power delivered to the plasma determine at least one of: an amount of the active NxOy species comprising activated ionic or radical species including at least one of NO*, N2O*, NO2*, NO3*, and N2O5*;a concentration of the active NxOy species comprising activated ionic or radical species including at least one of NO*, N2O*, NO2*, NO3*, and N2O5*;a growth rate of the deposited film;a film uniformity across the substrate;a dielectric constant of the deposited film;an index of refraction of the deposited film; anda molecular composition of the deposited film. 14. The method of claim 10 further comprising: generating the oxidizer by exposing O2 and a nitrogen source gas to a plasma discharge;monitoring a ratio of O3 and the active NxOy species generated by the plasma discharge; andadjusting at least one of a power input to the plasma discharge, a temperature of a housing; a flow rate of the O2, and a flow rate of the nitrogen source gas to achieve a predetermined criterion. 15. The method of claim 14 wherein the predetermined criterion includes at least one of: an oxidizer flow rate;an oxidant/NxOy concentration ratio;an active NxOy species concentration;a ratio of the active NxOy species, wherein the active NxOy species gas contains a plurality of excited nitrogen-oxygen compounds; anda concentration of a particular active nitrogen-oxygen compound. 16. The method of claim 1 wherein the active NxOy species comprises an excited NxOy radical species, an excited NxOy ionic species, and combinations thereof. 17. The method of claim 1 wherein oxidant gas comprises a mixture of two or more of O, O2, NO, N2O, NO2, NO3, N2O5, NOx, NxOy, radicals thereof, and O3, and wherein the mixture comprises approximately 5 atomic percent to 25 atomic percent O3. 18. The method of claim 1 further comprising: exposing the substrate to a second precursor gas for a second precursor pulse interval then removing the second precursor gas thereafter; andafter removing the second precursor gas, exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for a oxidation pulse interval then removing the oxidizer thereafter. 19. A method comprising depositing a metal oxide in any film stack using a metal halide precursor and an oxidant comprising ozone and excited nitrogen-oxygen species; wherein the ozone and the excited nitrogen-oxygen species are formed using a remote plasma,wherein, prior to introducing the excited nitrogen-oxygen species to a reaction chamber, the excited nitrogen-oxygen species are monitored using a sensor and one or more process parameters are adjusted based on the monitored excited nitrogen-oxygen species, andwherein a deposition rate and a deposition uniformity increase as a result of the excited nitrogen-oxygen species. 20. The method of claim 19 wherein the metal oxide comprises at least one of Al2O3, HfO2, ZrO2, La2O3 and Ta2O5. 21. The method of claim 19 wherein the metal halide comprises any metal in compound combination with any halide element. 22. A method for depositing a film on a substrate comprising controlling uniformity of deposition of the deposited film by monitoring active nitrogen-oxygen species using a sensor prior to introducing the active nitrogen-oxygen species to a reaction chamber and adjusting an amount of the active nitrogen-oxygen species provided to the reaction chamber based on the monitoring.
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